METAL CLAD MICA CAPACITOR Search Results

thermal conductive teflon

Abstract: MIN02-002 500 MCM cte18 mcm01
Contextual Info: Types MCM and MIN Metal Clad RF Capacitors Multilayer High Power, High Temperature Mica and Teflon Capacitors ze Types MCM and MIN metal clad Teflon® and mica capacitors are top performers for high power applications requiring low inductance at high frequencies and

CD mica

Contextual Info: Types MCM and MIN Metal Clad RF Capacitors High Frequency, Low Inductance, Mica and Teflon Capacitors Ac tua lS ize Types MCM and MIN metal clad Teflon and mica capacitors are top performers for high power applications requiring low inductance at high frequencies and

metal clad mica capacitor

Contextual Info: Metal Clad Mica Capacitors Part Number Construction MCJ 101 T 201 Type1 Characteristic3 \ Capacitance5 Temperature7 Terminal Config.2 VDC4 Tolerancee 1. 2. 3. Type: MCJ: MWM 602 ; MCT (101) Terminal Configuration: 101 (MCJ & MCT); 102 (MCJ); 602 (MWM) Characteristic:

Contextual Info: Metal Clad Mica Capacitors Part Number Construction MCJ 101 Type1 Terminal Con fig. 1. 2. 3. E T Characteristic3 VDC4 201 O Capacitance5 Temperature7 Tolerance6 Type: MCJ; MWM 602 ; MCT (101) Terminal Configuration: 101 (MCJ & MCT); 102 (MCJ); 602 (MWM) Characteristic:

Contextual Info: Metal Clad Mica Capacitors Part Number Construction MCJ 101 E T 201 O Type1 Characteristic3 Capacitance5 Temperature7 Terminal Config/ VDC4 Tolerance6 1. 2. 3. 4. 5. 6. 7. Type: MCJ; MWM 602 ; MCT (101) Terminal Configuration: 101 (MCJ & MCT); 102 (MCJ); 602 (MWM)

metal clad mica capacitor

Abstract: CZ 5.0VDC
Contextual Info: Metal Clad Mica Capacitors Part Number Construction MCJ 101 E T 201 O Type1 Temperature7 Characteristic3 Capacitance5 Tolerance6 Terminal Config.• VDC4 1. 2. 3. 4. 5. 6. 7. Type: MCJ; M W M 602 ; M CT (101) Terminal Configuration: 101 (MCJ & MCT); 102 (MCJ); 602 (MWM)

MCT-101

Abstract: mica capacitor metal clad mica capacitor MCJ-101
Contextual Info: METAL CLAD MICA CAPACITORS -I' V I »¿ - ''.'i . • ■■■ . . f ~~ r • ' . . i l ■ 'íf n VOLTAGE A = 100 C = 300 D = 500 Y = 50 CAPACITANCE The nominal capacitance value is ex­ pressed in pf and is normally identified by a three digit number. The first two digits

Contextual Info: ORDERING DATA SEMCO Type Designation MCM01 001 09 101 o h— Z o LU —1 >f— D C LU £2 !< LU CS < 1— cc LU 1— o < DC < X o s es IXI LL. 1— z o u J LU U <c < LU <C CS cc Z <r Q- ee o < Q_ < u o > Tape and Reel O lu Characteristic The characteristic letter designates the performance

MC1723

Contextual Info: VRF157FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion.

ATC 700E

Abstract: arco TRIMMER capacitor RESIStance 100 OHMS and 600W FERRITE TOROID 723 voltage regulator IN4148 equivalent MRF157
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

RL1009-5820-97-D1

Abstract: MRF157
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

723 voltage regulator

Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
Contextual Info: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

VRF157FL

Abstract: 2204B MRF157 RL1009-5820-97-D1 Dielectric Laboratories 117nH arco TRIMMER capacitor 262 10E112
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

723 voltage regulator

Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
Contextual Info: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

Contextual Info: VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

Contextual Info: VRF157FL VRF157FLMP 50V, 600W, 80MHz D RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

IN5357

Abstract: VRF157FL MRF157 1kw mosfet 2204B mp Ceramic Disc Capacitors T46 634 arco TRIMMER capacitor 262 thermistor M35
Contextual Info: VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.

arco capacitors

Abstract: MIL-M-13231 CM05 dipped mica DM15 equivalent sae 1010 SAE 1006 ARCO DM15 ARCO DM19 ARCO dm15 capacitor
Contextual Info: Case Style DM 5 DM10 DM15 DM19 DM20 DM30 DM42 CAPACITANCE RANGE Commercial MIL 1-390 1-470 1-1200 100-8200 680-12000 5100-20000 16000-100000 -1-390 1-390 430-4700 -5100-20000 22000-62000 MIL EQUIVALENT Straight Crimped Leads Leads none none CM04 CM09

301AT

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

equivalent of transistor D 2331

Abstract: 1RC5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF151

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband com m ercial and m ilitary applications at frequencies to 175 MHz. The high power, high gain and broadband perform ance of this

STO-175

Abstract: MRF151 MOSFET RF POWER TRANSISTOR VHF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field -E ffect Transistor MRF151 N-Channel Enhancement-Mode MOSFET D e s ig n e d fo r b ro a d b a n d co m m e rc ia l a n d m ilita ry a p p lic a tio n s a t fre q u e n c ie s to 175 M H z. T h e high pow e r, high g a in a n d b ro a d b a n d p e rfo rm a n c e o f th is

2SC5125

Abstract: air variable capacitor transistor 5d mica capacitor metal clad mica capacitor T-40E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial. planar type transistor OUTLINE DRAWING Dimension in mm specifically designed for high power amplifiers in VHF band. R1 FEATURES • High power output and high gain : Po 2 80W, Gpe S 7.2dB,

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,