MESFET DATA SHEET Search Results

transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear

MESFET S parameter data sheet

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It

NE6500379A

Abstract: NE6500379A-T1
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high

Contextual Info: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high

62095

Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with

NEC 2933

Abstract: 2912 nec NEC 2705 72248 NEC 2705 L 107
Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high . output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

99419

Contextual Info: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

nec 258

Abstract: NEZ1011-8E NEZ1414-8E
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Nec K 872

Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

nec 0882

Abstract: NEC 1601 fet nec 0882 p
Contextual Info: DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W. push-pull type GaAs MESFET designed forhigh power transmitter applications for PCS, DCS and PHS base station systems. It Is capable of delivering 50 watts of output power CW with high linear

TQP200002

Abstract: TQP200002 ESD Protection Device
Contextual Info: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents

ITT2110AH

Abstract: ITT2111AH ITT2112AH ITT211X ITTT2112AH
Contextual Info: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual

NE650

Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage

gaas fet T79

Abstract: ES182
Contextual Info: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY

NE6500379A

Abstract: NE6500379A-T1
Contextual Info: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE6500379A GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP 5.5 BOTTOM 3.8

GaAs MESFET

Abstract: NE6500379A
Contextual Info: PRELIMINARY DATA SHEET INIE C 3W, L/S-BAND MEDIUM POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • HIGH OUTPUT POWER: +35 dBm TYP PACKAGE OUTLINE 79A • HIGH LINEAR GAIN: 10 dB TYP

smd transistor marking cf

Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

GaAs MESFET amplifier

Abstract: TGA8310-SCC TGA8349-SCC 05um
Contextual Info: 0.5-µm Low-Noise, Low-Current MesFET LNLC Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section

GaAs FET operating junction temperature

Abstract: TRANSISTOR 318a mesfet datasheet by motorola MRF9811T1
Contextual Info: MOTOROLA Order this document by MRF9811T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide MRF9811T1 N–Channel Depletion–Mode MESFET Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.

K 1358 fet transistor

Abstract: AN1032 NES1720P-140
Contextual Info: PRELIMINARY DATA SHEET 140 W L-BAND TWIN POWER GaAs MESFET NES1720P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH EFFICIENCY: 42% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.

AN1032

Abstract: NES2427P-140 transistor a 1837
Contextual Info: PRELIMINARY DATA SHEET 140 W S-BAND TWIN POWER GaAs MESFET NES2427P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 9.5 dB TYP HIGH EFFICIENCY: 41% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.