MESFET CURRENT RATING Search Results

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

4.1 amplifier circuit diagram

Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 819d
Contextual Info: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

Contextual Info: 19-3985; Rev 2; 9/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

Contextual Info: R2005240 R2005240 Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) 3NOT FOR NEW DESIGNS Package: SOT-115J Product Description Features       GaAs HBT GaAs MESFET InGaP HBT INPUT OUTPUT NE W Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS

sm 0038 receiver

Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
Contextual Info: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts

356 opto

Abstract: 80In/15pb/5ag P35-1110 NN12 P35-1110-0 P35-1110-1 micro-x 420 bookham
Contextual Info: Data sheet MESFET for OPTO Receivers Features • General purpose amplifier in PIN FET receiver Performance Optimised to provide high gm • Transimpedance amplifier for wide band PIN FET receiver and low gate leakage • High gm, typically 45mS • Low gate leakage current,

Contextual Info: SMF-06300 ELECTRO NICS Samsung M icrow ave Sem iconductor G â ill O p tilT liZ G d Low Current GaAs FET 2 -1 2 GHz Description Features The SMF-06300 is a 600 im n-channel MESFET with 0.5 |xm gate length, utilizing Samsung Microwave’s gain/low current optimized G30 process. Ti/Pt/Au gate

MA01503D

Contextual Info: MA01503D Low Noise Amplifier Die 8.0 - 11.0 GHz FEATURES •= •= Advanced Information Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance •= Excellent Return Loss •= Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS

ITT313503D

Contextual Info: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS

Contextual Info: ADVANCED INFORMATION Low Noise Amplifier Die 8.0 -1 1 .0 GHz ITT313503D FEATURES • • • • 8 to 11 GHz Operation 50 n Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process MAXIMUM RATINGS DESCRIPTION (Ta = 25 °C unless otherwise noted)

NEC Microwave Semiconductors

Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES_ Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB V d sx Drain to Source Voltage

NE650

Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES_ ; Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 10.5 dB V dsx Drain to Source Voltage

NE6501077

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage

152900

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 11.5 dB V dsx Drain to Source Voltage V

NEC Microwave Semiconductors

Contextual Info: L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%

NE6500496

Abstract: 173300 NEC Microwave Semiconductors
Contextual Info: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%

NE6500496

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET L/S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage

NE6501077

Abstract: NEC Microwave Semiconductors nec microwave
Contextual Info: L/S BAND MEDIUM POWER GaAs MESFET NE6501077 ABSOLUTE MAXIMUM RATINGS FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 10 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 10.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY: 40%

TQTRX

Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
Contextual Info: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor