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    MDS1653 MOSFET Search Results

    MDS1653 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet

    MDS1653 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MDS1653

    Abstract: MDD*1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 mdS1653 MOSFET MDD1653R MDD165 MDD1653T 190NC
    Contextual Info: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 55A, 8.5mΩ General Description Features The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		MDD1653 MDS1653 MDD1653 MDD*1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 mdS1653 MOSFET MDD1653R MDD165 MDD1653T 190NC PDF