MCP 107-BALL 13 Search Results

S30ML01GP

Abstract: S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S75PL-N S30ML01 tray matrix bga
Contextual Info: S75PL-N MirrorBit ORNAND™ MCPs Stacked Multi-Chip Product MCP S29PL-N: CMOS 3.0 Volt-only Simultaneous Read/Write, Page-mode Flash Memory (NOR Interface) S30ML-P: ORNAND Flash (NAND Interface) 3V pSRAM S75PL-N MirrorBit™ ORNAND™ MCPs Cover Sheet

CDA 194

Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
Contextual Info: ‹ Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 ‹ Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

U2.8

Abstract: MICRON mcp ARM720T EDB7312 EP7211 EP7311 U283 63D18 U29-6 13005 m8
Contextual Info: EP7311 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled

JESD21-C

Abstract: E8870DH JESD79 mrf 245 E8870 JESD-21C 567-Ball
Contextual Info: Intel 82870DH DDR Memory Hub DMH Datasheet Product Features • ■ ■ ■ ■ Two independent DDR DIMM channels per DMH. — 4 DIMMs per DDR Channel. — Registered PC1600 DDR DIMMs. Write Buffers to minimize large turnaround times. Pass through architecture for Read and

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

smartphone MOTHERBOARD CIRCUIT diagram

Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
Contextual Info: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

S29PL127J

Abstract: S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

D15-D16

Abstract: EP7311M-IBZ
Contextual Info: EP7311 Data Sheet FEATURES High-performance, Low-power, System-on-chip with SDRAM & Enhanced Digital Audio Interface ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled Ultra low power

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

led flasher traffic

Abstract: n100 PHILIPS SEMICONDUCTOR 50 led flasher circuit with pdf format ARM700 FM STEREO CODER Force MCP lcd N7 Siren Sound Generator 9 sound n20f n41f
Contextual Info: EP7211 Preliminary Data Sheet FEATURES High-Performance Ultra-LowPower System-on-Chip with LCD Controller • Dynamically programmable clock speeds of 18, 36, 49, and 74 MHz at 2.5 V ■ Performance matching 100-MHz Intel Pentium-based PC ■ Socket and register compatible with CL-PS7111

n20f

Abstract: Siren Sound Generator 5 sound n057 B n157 ARM720T CL-PS6700 CL-PS7111 EP7211 UCB1100 UCB1200
Contextual Info: EP7211 Preliminary Data Sheet FEATURES • Dynamically programmable clock speeds of High-Performance Ultra-LowPower System-on-Chip with LCD Controller 18, 36, 49, and 74 MHz at 2.5 V ■ Performance matching 100-MHz Intel Pentium-based PC ■ Socket and register compatible with CL-PS7111

ict prc w4

Abstract: ict prc b9 ICT PRC A8 ARM720T EDB7312 EP7211 EP7311 Cirrus Logic Maverick
Contextual Info: EP7311 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled

S71PL064JA0

Abstract: S71PL064JB0 S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 PL032J Spansion s29pl127j
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

Mcp90

Abstract: MCP78 032J mcp68
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

S29PL129J

Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

INDEPENDENT INK 73X

Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Contextual Info: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features

MARVELL PXA 930

Abstract: 88AP320 PXA320 88ap310 88AP300 PXA312 pxa310 88AP303 marvell pxa310 xscale PXA310
Contextual Info: Cover Marvell PXA3xx 88AP3xx Processor Family Electrical, Mechanical, and Thermal Functional Specification PXA30x Processor (88AP300, 88AP301, 88AP302, 88AP303) PXA31x Processor (88AP310, 88AP311, 88AP312) PXA32x Processor (88AP320, 88AP322) Doc. No. MV-S105156-00, Rev. 2.0 Version April 6, 2009 Released

INDEPENDENT INK 73X

Abstract: FTA073 S29JL064H mA109p
Contextual Info: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features

Flash MCp nand DRAM 107-ball

Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Contextual Info: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

SAMSUNG MCP

Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
Contextual Info: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

SAMSUNG MCP

Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Contextual Info: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM