MCL 0 550 Search Results

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L - L X 1 001 33UWW 010.00 [0 0 .3 9 4 ] CAUTION: STATIC SENSITIVE mCl FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. 1 3 .5 0 011.00 [0 0 .4 3 3 ] ELECTRO-OPTICAL CHARACTERISTICS Ta =25‘ C

FOR1dB

Contextual Info: . I * DOUBLE BALANCED MIXER M ODEL M 0 .4 5 0 # 1 RF, LO 5-500 MHz; IF D C -500 MHz LO Power +23 dBm Relay Header MCL Model RAY-1 Replacement Guaranteed Specifications* From -55°C to +85°C 5 - 500 MHz DC - 500 MHz Frequency Range RF, LO Ports IF Port Conversion Loss

Contextual Info: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words

Contextual Info: SONY ΣRAM CXK79M36C162GB / CXK79M18C162GB 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C162GB (organized as 524,288 words by 36 bits) and the CXK79M18C162GB (organized as 1,048,576 words

a7w29

Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M18C163GB-5 CXK79M36C163GB
Contextual Info: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words

2U 73 diode

Abstract: CXK79M18C165GB CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

CXK79M18C164GB

Abstract: CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

CXK79M36C163GB

Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5
Contextual Info: SONY ΣRAM CXK79M36C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C163GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,

CXK79M18C162GB

Abstract: CXK79M18C162GB-33 CXK79M18C162GB-4 CXK79M18C162GB-5 CXK79M36C162GB CXK79M36C162GB-33 CXK79M36C162GB-4 CXK79M36C162GB-5 AA119
Contextual Info: SONY ΣRAM CXK79M36C162GB / CXK79M18C162GB 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C162GB (organized as 524,288 words by 36 bits) and the CXK79M18C162GB (organized as 1,048,576 words

CXK79M36C162GB

Abstract: CXK79M36C162GB-33 CXK79M36C162GB-4 CXK79M36C162GB-5
Contextual Info: SONY ΣRAM CXK79M36C162GB 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C162GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,

CXK79M36C165GB

Abstract: CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M36C165GB-5 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

CXK79M36C161GB

Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
Contextual Info: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words

A7W17

Abstract: CXK79M18C161GB CXK79M36C161GB CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 1K x 8 static ram IDD24
Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

CXK79M72C164GB-33

Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

CXK79M18C165GB

Abstract: CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

A7W17

Abstract: CXK79M18C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 2a 105
Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

Ultrasonic cleaner circuit diagram

Abstract: MARCONI power P35-5133-000-200 H40P NN12
Contextual Info: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

Contextual Info: Ceramic ! NEW High Pass Filter HFTC-19 2300 to 5500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C • • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ.

Contextual Info: Ceramic ! NEW High Pass Filter HFTC-39 4500 to 5500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C • • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ.

CXK79M18C163GB

Abstract: CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M36C163GB CXK79M36C163GB-33 CXK79M36C163GB-4
Contextual Info: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 16Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/44 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words

Contextual Info: Ceramic ! NEW High Pass Filter HFTC-19 2300 to 5500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C • • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ.