MCL 0 120 Search Results

transistor C2001

Abstract: c2001 transistor C1999 MCL2501 6N135 6N136 HCPL-2502 HCPL-2503 MCL2502 MCL2503
Contextual Info: Sf^ENERAD IIGH-SPEEO RANSISTOR OPTOCOUPLERS 1 INSTRUMENT, *' * - "-3 MCL2501 IViCI.2503 HCPL-2503 MCL2502 (HCPL-2502) 6N136 6N135 PROPAGATION DELAY COMPARISON MINIMUM CTR SELECTION CHART MCL 2501 MCL/HCPL-2503 6N136 6N135 MCL/HCPL-2502 CTR @ 1, = 16 mA 0 -7 0 'C

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L - L X 1 001 33UWW 010.00 [0 0 .3 9 4 ] CAUTION: STATIC SENSITIVE mCl FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. 1 3 .5 0 011.00 [0 0 .4 3 3 ] ELECTRO-OPTICAL CHARACTERISTICS Ta =25‘ C

Contextual Info: MODEL DO UBLE BA LA N C E D MIXER MD-415 RF, LO 2 - 2000 MHz IF 0.5 - 500 MHz LO Power +10 dBm Relay Header MCL Model SRA-220 Replacement Guaranteed Specifications* From -5 4 PC to +85°C Frequency Range RF, LO Ports IF Port C onversion Loss 2 -1 0 MHz 10 - 1000 MHz

Contextual Info: Ceramic HFCN-1200+ HFCN-1200 High Pass Filter High Pass Filter 50Ω 1220 to 4600 MHz Metal Shield 50Ω 1200 to 3400 MHz Maximum Ratings Maximum OperatingRatings Temperature -55°C to 100°C Storage Temperature -55°C too100°C Operating Temperature -40oC

Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

CXK79M36C165GB

Abstract: CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M36C165GB-5 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

CXK79M36C164GB

Abstract: CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

CXK79M36C161GB

Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
Contextual Info: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words

CXK79M72C164GB-33

Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

smd transistor 12W 3 pins

Abstract: TDA8920BJ TEA5767, TEA5761 pnx0102 tda8947j tea5767 PNX0105 PNX0101 TDA8947 TDA8920BTH
Contextual Info: Audio Processing Audio Processing 7 DSP / Radio Nexperia IC solutions for portable audio and multimedia players Typenumber Description Main Functionality Audio Co-processor Audio Co-processor Other CODECs on ARM Interconnectivity Package Processor Performance

mcl-25 rf

Abstract: DC10 NN12 P35-4234-000-200
Contextual Info: P35-4234-000-200 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 20GHz Features • Ultra Broadband • Low insertion loss 3.0dB typ at 18GHz • • Fast switching speed High isolation 38dB at 18GHz • Through GaAs Vias for improved performance Description The P35-4234-000-200 is a high performance broadband Gallium Arsenide monolithic single pole four

NN12

Abstract: P35-5140-000-200 MARCONI power
Contextual Info: P35-5140-000-200 HEMT MMIC BROADBAND AMPLIFIER, 20 - 40GHz Features • • • • 21dBm Typical Saturated Output Power 20dB Typical Gain 1.72 x 0.76mm Die Size Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for

H40P

Abstract: NN12 P35-5136-000-200 MARCONI power
Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

Ultrasonic cleaner circuit diagram

Abstract: MARCONI power P35-5133-000-200 H40P NN12
Contextual Info: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

8051 ps2 keyboard circuit

Abstract: ps2 keyboard interface scan USB KEYBOARD CONTROLLER 8051 keyboard ps2 circuit 8051 microcontroller interface with ps2 keyboard 26 pin keyboard to usb W81C280 TDJ2 pc keyboard CIRCUIT wire diagram KBS01
Contextual Info: W81C280 i’ i n b o n d Electronics Corp. USB KEYBOARD/ DEVICE CONTROLLER GENERAL DESCRIPTION W81C280 is a single-chip microcontroller with Universal Serial Bus USB interface for keyboard application, it includes the core of Winbond* 8-bit microprocessor W78C52. It implements a

02580

Abstract: H40P NN12 P35-5126-000-200 Sharp amplifier SM 207
Contextual Info: P35-5126-000-200 HEMT MMIC DRIVER AMPLIFIER, 25-30GHz Features • • • Over 22dBm Output Power @ 28GHz 10dB Gain from 25 to 30GHz Small 2 x 1mm Die Size Description The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is

H40P

Abstract: NN12 P35-5127-000-200 MARCONI power
Contextual Info: P35-5127-000-200 HEMT MMIC DRIVER AMPLIFIER, 22-34GHz Features • • 20dBm Output Power 18dB Gain Description The P35-5127-000-200 is a high performance 22-34GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and point to point microwave systems . The second and third

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

H40P

Abstract: MARCONI power NN12 P35-5134-000-200
Contextual Info: P35-5134-000-200 HEMT MMIC 1W POWER AMPLIFIER, 24GHz Features • • • Gain; 16dB typical @ 24GHz P-1dB; 30.5dBm typical @ 24GHz 0.20 ? m pHEMT technology Description The P35-5134-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

NN12

Abstract: P35-4720-000-200
Contextual Info: P35-4720-000-200 GaAs MMIC DRIVER AMPLIFIER, 5-6GHz Features • • • • • 25 dB Gain typical F20 MESFET Technology 21dBm Output Power High & Low Gain States PAE Max 25% Description The P35-4720-000-200 is a high performance Gallium Arsenide Driver Amplifier MMIC. It is primarily

NN12

Abstract: P35-4229-000-200
Contextual Info: P35-4229-000-200 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 20GHz Features • Ultra Broadband • Low insertion loss 2.0dB typ at 18GHz • • Fast switching speed High isolation 45dB at 10GHz • Through GaAs Vias for improved performance Description The P35-4229-000-200 is a high performance Gallium Arsenide monolithic single pole double throw broadband RF

MCL PSCQ-2-180

Abstract: 180 degree hybrid 204D 213B PSCQ-2-180 MCL pscq mcl 0 120
Contextual Info: ƒ +<%5,' 02' / +64 90° QUADRATURE HYBRID Guaranteed Specifications Parameter Range Frequency Limits 120 MHz to 180 MHz Min Insertion Loss 120 MHz to 180 MHz 0.7 dB Max Isolation 120 MHz to 180 MHz 20 dB Min Phase Balance 120 MHz to 180 MHz ±3° Max