MCL 0 105 Search Results

Contextual Info: Features • • • • • • • • • • • • • Extended Temperature Range for High Temperature up to 105° C 2-Kbyte ROM, 256 x 4-bit RAM 12 Bi-directional I/Os Up to 6 External/Internal Interrupt Sources Multifunction Timer/Counter with – IR Remote Control Carrier Generator

ATAM893

Abstract: ATAR092-C ATAR892-C BP13 BP23 SSO20
Contextual Info: Features • • • • • • • • • • • • • Extended Temperature Range for High Temperature up to 105°C 4-Kbyte ROM, 256 x 4-bit RAM 16 Bi-directional I/Os Up to 7 External/Internal Interrupt Sources Multifunction Timer/Counter with – IR Remote Control Carrier Generator

FSK modulator and demodulator

Abstract: ATAM893 ATAR092-C ATAR892-C BP13 BP23 SSO20 MX 128 D
Contextual Info: Features • • • • • • • • • • • • • Extended Temperature Range for High Temperature up to 105°C 4-Kbyte ROM, 256 x 4-bit RAM 16 Bi-directional I/Os Up to 7 External/Internal Interrupt Sources Multifunction Timer/Counter with – IR Remote Control Carrier Generator

Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

CXK79M36C165GB

Abstract: CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M36C165GB-5 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

CXK79M36C164GB

Abstract: CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

CXK79M36C161GB

Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
Contextual Info: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words

CXK79M72C164GB-33

Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

H40P

Abstract: NN12 P35-5136-000-200 MARCONI power
Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

02580

Abstract: H40P NN12 P35-5126-000-200 Sharp amplifier SM 207
Contextual Info: P35-5126-000-200 HEMT MMIC DRIVER AMPLIFIER, 25-30GHz Features • • • Over 22dBm Output Power @ 28GHz 10dB Gain from 25 to 30GHz Small 2 x 1mm Die Size Description The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is

H40P

Abstract: NN12 P35-5127-000-200 MARCONI power
Contextual Info: P35-5127-000-200 HEMT MMIC DRIVER AMPLIFIER, 22-34GHz Features • • 20dBm Output Power 18dB Gain Description The P35-5127-000-200 is a high performance 22-34GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and point to point microwave systems . The second and third

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

Contextual Info: Ceramic TCN1-10+ TCN1-10 RF Transformer 50Ω 680 to 1050 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* • • • • 5W * derate linearly to 2.5 W at 100°C CASE STYLE: FV1206-1

Contextual Info: Surface Mount ADT16-6+ ADT16-6 RFTransformer 0.25 to 105 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Features -20°C to 85°C -55°C to 100°C 0.5W • excellent amplitude unbalance, 0.1 dB typ. and phase unbalance, 3 deg. typ. in 1 dB bandwidth

Contextual Info: Features • • • • • • • • • • • • 2-Kbyte ROM, 256 x 4-bit RAM 12 Bi-directional I/Os Up to 6 External/Internal Interrupt Sources Multifunction Timer/Counter with – IR Remote Control Carrier Generator – Bi-phase-, Manchester- and Pulse-width Modulator and Demodulator

ADT16-6

Contextual Info: Surface Mount ADT16-6+ ADT16-6 RF Transformer 0.25 to 105 MHz 50Ω Maximum Ratings Features Operating Temperature -20°C to 85°C Storage Temperature -55°C to 100°C RF Power 0.5W DC Current 30mA • excellent amplitude unbalance, 0.1 dB typ. and phase unbalance, 3 deg. typ. in 1 dB bandwidth

Contextual Info: Ceramic LFCN-105+ LFCN-105 Low Pass Filter 50Ω DC to 105 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* 8.5W max. at 25°C DC Current Input to Output 0.5A max. at 25°C CASE STYLE: FV1206

Contextual Info: Ceramic LFCN-105+ LFCN-105 Low Pass Filter DC to 105 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* 8.5W max. at 25°C DC Current Input to Output 0.5A max. at 25°C *Passband rating, derate linearly to 3.5W at 100°C ambient.

Contextual Info: Ceramic LFCN-105+ LFCN-105 Low Pass Filter DC to 105 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* 8.5W max. at 25°C DC Current Input to Output 0.5A max. at 25°C *Passband rating, derate linearly to 3.5W at 100°C ambient.

filter mcl 0 105

Abstract: DC-105 FV1206 LFCN-105 LFCN-105D
Contextual Info: Ceramic LFCN-105+ LFCN-105 Low Pass Filter 50Ω DC to 105 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* 8.5W max. at 25°C DC Current Input to Output 0.5A max. at 25°C * Passband rating, derate linearly to 3.5W at 100°C ambient.

Contextual Info: Surface Mount ADT16-6+ ADT16-6 RF Transformer 50Ω 0.25 to 105 MHz Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 0.5W DC Current 30mA Pin Connections PRIMARY DOT PRIMARY SECONDARY DOT SECONDARY NOT USED

Contextual Info: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory