MC14069UB GATE NO Search Results

MC74HCU04A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04A Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS The MC74HCU04A is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

MC14069UB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04 Hex Unbuffered In verter High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 646-06 The MC74HCU04 is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup

HC04a motorola

Abstract: C74HCU04A HC04A LS04 motorola MC74HCU04A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04A Product Preview Hex Unbuffered In verter High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 646-06 The MC74HCU04A is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup

C74HCU04

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HCU04 Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 6 4 6 -0 6 The MC74HCU04 is identical in pinout to the LS04 and the MC14069UB. The device inputs are compatible with standard CMOS outputs; with pullup

motorola hc04

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCU04 Hex Unbuffered Inverter H igh Perform ance Silicon-Gate C M O S The MC54/74HCU04 is identical in pinout to the LS04 and the MC14069UB. The device inputs are com patible w ith standard CMOS outputs; w ith pullup resistors,

74HCU04 st

Contextual Info: • MOTOROLA SEMICONDUCTOR b3b7ES2 □□‘ìlb S 'i SST ■ MOTM b lE ì> 'MOTOROLA SC LO G IC TECHNICAL DATA MC54/74HCU04 Hex Unbuffered Inverter High Performance Silicon-Gate CMOS J SUFFIX CERAMIC CASE 632-08 The MC54/74HCU04 is identical in pinout to the LS04 and the MC14069UB. The

Contextual Info: MOTOROLA SC - C L O G I O DE ÎT~J L,3fc,7ESE G O ñ O a ñ ú 1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCU04 Hex Unbuffered Inverter High Performance Silicon-Gate CMOS J SUFFIX CERAMIC CASE 632-08 The MC54/74HCU04 is identical in pinout to the LS04 and the MC14069UB. The

14069U

Abstract: MC14069UBCP MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069ug

Abstract: 14069ug datasheet MC14069UBCP 14069u MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG 14069
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069UG

Abstract: MC14069UBCPG 14069u MC14069UBC MC14069U
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069u

Abstract: MC14069UBCP MC14069U MC14069UB MC14069UBD MC14069UBDR2 MC14069UBDT CD4069UB
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069U

Abstract: MC14069UBCP MC14069UB CD4069UB MC14069UBD MC14069UBDR2 MC14069UBDT MC14069UBDTEL
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069UG

Abstract: MC14069UBCPG CD4069UB MC14069UB MC14069UBCP MC14069UBD MC14069UBDG
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069U

Abstract: MC14069UBCP CD4069UB MC14069U MC14069UB MC14069UBD MC14069UBDR2 MC14069UBDT
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069U

Abstract: MC14069UBD MC14069UBFL1 MC14069UB gate no MC14069UBCP Enhancemen to-92
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069UG

Abstract: MC14069UBCP MC14069UBCPG MC14069UBDG CD4069UB MC14069UB MC14069UBD
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069UG

Abstract: MC14069UBCP MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

14069U

Abstract: MC14069UBCP CD4069UB
Contextual Info: MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six

CD4069UB

Abstract: MC14068B MC14069UB ceramic case 632
Contextual Info: MOTOROLA MC14068B See Page 6-5 SEMICONDUCTOR TECHNICAL DATA MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high

mc14584b

Abstract: 14584b mc14584bcp MM74Cl4
Contextual Info: MC14584B Hex Schmitt Trigger The MC14584B Hex Schmitt Trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14584B

MM74Cl4

Abstract: mc14584b MC14584BCP MC14584BD 14584b MC14069U MC14584BFR2
Contextual Info: MC14584B Hex Schmitt Trigger The MC14584B Hex Schmitt Trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14584B

MC14069UB equivalent

Abstract: ceramic case 632
Contextual Info: M O TO R O LA MC14106B HEX SC HM ITT TRIG GER The MC14106B hex Schmitt Trigger is constructed with MOS P-channel and N-channel enhancement mode devices in a single monolithic struc­ ture. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14106B may be used in place of