MC-5* NEC Search Results

Electronic Hobby Circuits

Contextual Info: MC Multi-Contact 5. Experimentierstecksysteme_ Experimental Kits ET-1 Bestellnr. 25.0008 ET-1 Materiel ^experimentation Order No. 25.0008 ET-1 No decde 25.0008 Der MC -Trainer ET-1 The MC®-Trainer ET-1 Le MC®-Trainer ET-1 ermogiicht den schnellen, sicheren, ubersichtlichen

UD42256

Abstract: 42256
Contextual Info: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single +5-volt power

300a 1000v thyristor

Abstract: mc5001 D-68623 1800 IXYS mc 1732 IXYS M2000-200 thyristor
Contextual Info: IXYS Dual Thyristor Module Types MC#500-12io1 to MC#500-18io1 IXYS Date:- 5 Jan, 2004 Data Sheet Issue:- 1 Dual Thyristor Module Types MC#500-12io1 to MC#500-18io1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1

Contextual Info: NEC NEC Electronics Inc. MC-42512AA40, -42512AB40 524,288 X 40-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512AA40 and MC-42512AB40 are fast-page dynamic RAM modules organized as 524,288 words by 40 bits and designed to operate from a single +5-volt

41256 dram

Contextual Info: NEC MC-42256A36, -424256A36 262,144 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Pin Configuration Description The MC-42256A36 and the MC-424256A36 are dynamic RAM modules organized as 264,144 words by 36 bits and designed to operate from a single + 5-volt power

nec 424256

Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Contextual Info: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power

424256 memory

Abstract: 424256
Contextual Info: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power

Contextual Info: jk /IY * MC-42512AA40, -42512AB40 524,288 x 40-Bit Dynamic CMOS RAM Module H i Muí W NEC Electronics Inc. Description Pin Configuration The MC-42512AA40 and MC-42512AB40 are fast-page dynamic RAM modules organized as 524,288 words by 40 bits and designed to operate from a single + 5-volt

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

m1305

Abstract: MC-458CA726 MC-458CA726EFB-A10 MC-458CA726EFB-A80 MC-458CA726PFB-A10 MC-458CA726PFB-A80 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE • Description The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

MC-458CA726

Abstract: MC-458CA726EFB-A10 MC-458CA726EFB-A80 MC-458CA726PFB-A10 MC-458CA726PFB-A80 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

4512884

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE EO Description The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

MC-458CA727

Abstract: MC-458CA727EFA-A75 MC-458CA727PFA-A75 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA727 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

MC-458CA721ESA

Abstract: MC-458CA721ESA-A10 MC-458CA721ESA-A80 MC-458CA721PSA MC-458CA721PSA-A10 MC-458CA721PSA-A80 PD45128163 458CA721P
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721ESA, 458CA721PSA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CA721ESA and MC-458CA721PSA are 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721ESA,458CA721PSA,458CA721XSA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CA721ESA, MC-458CA721PSA and 458CA721XSA are 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721ESA,458CA721PSA,458CA721XSA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM EO Description The MC-458CA721ESA, MC-458CA721PSA and 458CA721XSA are 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled.

MC-458CA721ESA

Abstract: MC-458CA721ESA-A10 MC-458CA721ESA-A80 MC-458CA721PSA-A10 MC-458CA721PSA-A80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA721ESA,458CA721PSA,458CA721XSA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM EO Description The MC-458CA721ESA, MC-458CA721PSA and 458CA721XSA are 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled.

AS11D

Abstract: C-41256A8 30-pin SIMM
Contextual Info: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a

30-pin simm memory dynamic

Contextual Info: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is afast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-424LFC72 3.3 V OPERATION 4M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-424LFC72FY and MC-424LFC72FW are 4,194,304 words by 72 bits dynamic RAM modules on which 5 pieces of 64M DRAM µPD4265165 , and 4 pieces of 64M DRAM (µPD4265165) and 2 pieces of 16M DRAM

424100A

Contextual Info: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is a fast-page 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS circuitry, includ­

256k 30-pin SIMM

Abstract: 30-pin simm memory
Contextual Info: MEC NEC Electronics Inc. MC-42256AB9 262,144 x 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The MC-42256AB9 is a 262,144-word by 9-bit DRAM module designed to operate from a single +5-volt power supply. The module is a 30-pin socket-mountable