MC 790 P Search Results

MC5616

Abstract: MC5610 MC5613 MC5615 MC5619 MCE 2000
Contextual Info: MC5610 thru MC5619 Microsemi Corp. 'C th e c liod f experts SANTA ANA. CA j l o r m o r e in lo r m a t i o n c a ll: SC O TTSD A LE, A Z / 714 9 7 9 -8 2 2 0 FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE FE A T U R E S • • • • • • • M on olithic v o id le ss c o n stru c tio n .

MC5610

Abstract: MC5619
Contextual Info: MC5610 MC5619 fîîK ^ îM Microsemi Corp. FAST RECO VERY HIGH POW ER M IC R O H IG H VOLTAGE R EC T IF IER S FEATURES • Monolithic voidiess construction. • Triple layer passivation. • Lowest reverse leakage. • Smallest package available. • Lowest thermal resistance.

67516

Contextual Info: M rights strictly reserved. Reproduction or issue to third parties in any whatever is not permitted vttnul written outhority from the proprietor. Property of 8ERG OfCTTOWCS Copyright 8ERG ELECTRONICS WC. " L* T "° " c * Tous droits strictement reserves.

Contextual Info: Page 38 Thick Film Resistor Networks Single Inline Package -R /2 R Ladder SEI Type MC ; ‘“ S tL * • Black Body Color, Conformai Coating PERFORMANCE CHARACTERISTICS ELECTRICAL . Power Rating Watts Derated to 0 Load at Maximum Working Voltage Operating Temperature Range

mazda pentode 46

Abstract: SIEMENS EDISON SWAN pentode
Contextual Info: EDISWAN MAZDA 6FI HIGH SLOPE SCREENED R.F. PENTODE Indirectly heated— for parallel operation REPLA CEM EN T TYPE RATING Heater Voltage volts Heater Current (amps) Maximum Anode Voltage (volts) Maximum Screen Voltage (volts) Mutual Conductance (mA/V) Maximum Anode Dissipation (watts)

Contextual Info: 16011 Foothill Boulevard Irwindale. C A 91700 Tel: 8 IS 969-1315 FAX: (8 1 8 )969-0965 EIC Semiconductor, Inc, The plaltic m aterial citric* U /L recognition 94V -0. Nominal Zener Voilage TYPE Vz@Lrt 00 Izt (mA) Maximum Zen ct Impedance Zn&bx Zzkaizk (O)

B3817

Abstract: B39211-B3817-Z710 C61157-A7-A49
Contextual Info: SAW Components Data Sheet B3817 SAW Components B3817 Low-Loss Filter 208,0 MHz Data Sheet Ceramic package QCC10B Features ● ● ● ● IF low-loss filter for W-CDMA base station Temperature stable Usable bandwidth 3,84 MHz Ceramic SMD package Terminals

2E104

Abstract: E104K SH-E 878
Contextual Info: Polypropylene Capacitor Plastic Film Wrap, Epoxy End Fill Type PT12 T yp e P T12 p o lyp rop ylene precision cap a cito rs w hich e xh ib it unique and o u ts ta n d in g e le c tric a l and e n viro n m e n ta l ch a ra c te ris tic s . The fo llow in g are som e o f the m ost significa nt:

marconi

Abstract: marconi company
Contextual Info: ACT 9/M AY 1957 arconi V Triode Type ACT 9 H F POW ER A M PLIFIER AND OSCILLATOR General. An air-cooled transmitting triode fitted with a tungsten filament, suitable for use at frequencies up to 80 Mc/s. The figures quoted for maximum permissible ratings apply to operation at frequencies up to 15 Me/s.

MC 790 P

Contextual Info: 3 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. 2 ,19 LOC AL L R IG H T S R E S E R V E D . D IST REVISIONS 50 AF DESCRIPTION LTR REV PER 0G3A-0438-01 DATE DWN APVD 30JULO' JR

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

5610 oc

Contextual Info: MC5610 thru MC5619 FAST RECOVERY, HIGH POWER, MICRO HIGH VOLTAGE RECTIFIERS Available on commercial versions DESCRIPTION The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the smallest packages available. They are ideal for high-reliability where a failure cannot be

Contextual Info: MC5610 thru MC5619 FAST RECOVERY, HIGH POWER, MICRO HIGH VOLTAGE RECTIFIERS Available DESCRIPTION The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the smallest packages available. They are ideal for high-reliability where a failure cannot be

ACT28

Abstract: marconi company marconi
Contextual Info: A FORCED-AIR COOLED DISC SEAL PULSE O SC ILLA T O R TRIODE ACT28A ISSUE 1 The ACT28Ais a triode with an indirectly heated oxide coated cathode intended for use as an oscillator at frequencies up to 600Mc/s under pulsed or c.w. conditions. A pulse output of about 300kW per valve is attainable at 220Mc/s.

mosfet 300V 10A

Abstract: 300v 10 amp n-channel mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

shd225502

Abstract: shd2259
Contextual Info: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM150

Contextual Info: SENSITRON SEMICONDUCTOR 2N7224 TECHNICAL DATA DATA SHEET 161, REV see also data sheet 766 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.07 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements œ Repetitive Avalanche Rating

shd225405

Abstract: diode 250V 250mA
Contextual Info: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, .20 Ohm, 23A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

GP150MHB16S

Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.

Contextual Info: SENSITRON SEMICONDUCTOR 2N7236 TECHNICAL DATA DATA SHEET 586, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.20 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements œ Repetitive Avalanche Rating MAXIMUM RATINGS RATING

Contextual Info: SENSITRON SEMICONDUCTOR SHD225413 TECHNICAL DATA DATA SHEET 693, REV. - HERMETIC POWER MOSFET N-CHANNEL PRELIMINARY DESCRIPTION: 30 VOLT, 35 AMP, 0.012 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

shd225452

Abstract: IRF52
Contextual Info: SENSITRON SEMICONDUCTOR SHD225452 TECHNICAL DATA DATA SHEET 4102, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.07 Ohm, -34A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 œ Add an “S” to the end of the part number for S-100 screening, SHD225452S

Contextual Info: SENSITRON SEMICONDUCTOR SHD225515 TECHNICAL DATA DATA SHEET 2027, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.