MC 790 P Search Results

MC5616

Abstract: MC5610 MC5613 MC5615 MC5619 MCE 2000
Contextual Info: MC5610 thru MC5619 Microsemi Corp. 'C th e c liod f experts SANTA ANA. CA j l o r m o r e in lo r m a t i o n c a ll: SC O TTSD A LE, A Z / 714 9 7 9 -8 2 2 0 FAST RECOVERY HIGH POWER MICRO HIGH VOLTAGE FE A T U R E S • • • • • • • M on olithic v o id le ss c o n stru c tio n .

MC5610

Abstract: MC5619
Contextual Info: MC5610 MC5619 fîîK ^ îM Microsemi Corp. FAST RECO VERY HIGH POW ER M IC R O H IG H VOLTAGE R EC T IF IER S FEATURES • Monolithic voidiess construction. • Triple layer passivation. • Lowest reverse leakage. • Smallest package available. • Lowest thermal resistance.

67516

Contextual Info: M rights strictly reserved. Reproduction or issue to third parties in any whatever is not permitted vttnul written outhority from the proprietor. Property of 8ERG OfCTTOWCS Copyright 8ERG ELECTRONICS WC. " L* T "° " c * Tous droits strictement reserves.

mazda pentode 46

Abstract: SIEMENS EDISON SWAN pentode
Contextual Info: EDISWAN MAZDA 6FI HIGH SLOPE SCREENED R.F. PENTODE Indirectly heated— for parallel operation REPLA CEM EN T TYPE RATING Heater Voltage volts Heater Current (amps) Maximum Anode Voltage (volts) Maximum Screen Voltage (volts) Mutual Conductance (mA/V) Maximum Anode Dissipation (watts)

Contextual Info: 16011 Foothill Boulevard Irwindale. C A 91700 Tel: 8 IS 969-1315 FAX: (8 1 8 )969-0965 EIC Semiconductor, Inc, The plaltic m aterial citric* U /L recognition 94V -0. Nominal Zener Voilage TYPE Vz@Lrt 00 Izt (mA) Maximum Zen ct Impedance Zn&bx Zzkaizk (O)

MC 790 P

Contextual Info: 3 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . CO PYRIGHT 19 BY AMP INCORPORATED. 2 ,19 LOC AL L R IG H T S R E S E R V E D . D IST REVISIONS 50 AF DESCRIPTION LTR REV PER 0G3A-0438-01 DATE DWN APVD 30JULO' JR

Contextual Info: MC5610 thru MC5619 FAST RECOVERY, HIGH POWER, MICRO HIGH VOLTAGE RECTIFIERS Available DESCRIPTION The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the smallest packages available. They are ideal for high-reliability where a failure cannot be

ACT28

Abstract: marconi company marconi
Contextual Info: A FORCED-AIR COOLED DISC SEAL PULSE O SC ILLA T O R TRIODE ACT28A ISSUE 1 The ACT28Ais a triode with an indirectly heated oxide coated cathode intended for use as an oscillator at frequencies up to 600Mc/s under pulsed or c.w. conditions. A pulse output of about 300kW per valve is attainable at 220Mc/s.

IRF9640

Abstract: IRF1S9640 IIRF9640 IRF9643 IRF9642 IRF9641
Contextual Info: HARRIS S E M IC O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11 A, -150V and -200V These are P-Channel enhancement mode silicon-gate

mosfet 300V 10A

Abstract: 300v 10 amp n-channel mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

shd225502

Abstract: shd2259
Contextual Info: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM150

Contextual Info: SENSITRON SEMICONDUCTOR 2N7224 TECHNICAL DATA DATA SHEET 161, REV see also data sheet 766 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.07 Ohm MOSFET œ Isolated and Hermetically Sealed œ Simple Drive Requirements œ Repetitive Avalanche Rating

shd225405

Abstract: diode 250V 250mA
Contextual Info: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD225615 TECHNICAL DATA DATA SHEET 4167, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, .20 Ohm, 23A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to IRFM360 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD225515 TECHNICAL DATA DATA SHEET 2027, REV. A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

IRF3710 equivalent

Abstract: SHD225456 SHDC225456
Contextual Info: SENSITRON SEMICONDUCTOR SHD225456 TECHNICAL DATA DATA SHEET 4103, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.03 Ohm, 35A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF3710 œ Add an “S” to the end of the part number for S-100 screening, SHD225456S

shd22512

Contextual Info: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS

IRF5210

Abstract: shd230452
Contextual Info: SENSITRON SEMICONDUCTOR SHD230452 TECHNICAL DATA DATA SHEET 722, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.065 Ohm, -20A MOSFET œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRF5210 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE

shd2251

Abstract: shd225503
Contextual Info: SENSITRON SEMICONDUCTOR SHD225503 TECHNICAL DATA DATA SHEET 665, REV - Formerly Part Number SHD22510 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD225512 TECHNICAL DATA DATA SHEET 1063, REV. B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.035 Ohm, 55A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to OM55N10SA MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED.

shd225505b

Contextual Info: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

RCA-CA3052

Abstract: TAA550 ul1202 Analogschaltkreise der Volksrepublik Polen ITT transistoren Scans-048 UL1321 Dii 1501 itk 120-2 UL1111
Contextual Info: H orst Schm ied Analogschaltkreise der Volksrepublik Polen ln der V olksrepublik Polen ist dir- V ereinigung U nitru OEM ! A lleinhersteller von H albleiterbauelem enten. tofertigt werden neben einem großen T ypenspektrum an diskreten H albleitern 112 T ypen digitaler

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A32 SERIES 4M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-424000A32 series is a 4 194 304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 are assembled.

ST200-474

Abstract: TMCX165 ST050-466 UL1685 XHHW-2 TMC165 TMC3112 ST350-483 ST400-484 ST125 230
Contextual Info: INDUSTRIAL AUTOMATION & PROCESS CONTROL CABLES 18.96 Technical Information Gland Information for Armored Cables Thomas and Betts Hawke Part No. Hub Size NPT ST050-462 ST050-464 ST050-465 ST050-466 ST075-467 ST075-468 ST100-469 ST125-470 ST125-550 ST125-471