MC 668 L Search Results
MC 668 L Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MC668L |
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The European Selection Data Book 1976 | Scan | 55.36KB | 1 | ||
| MC668L |
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MHTL Ics | Scan | 278.67KB | 8 | ||
| MC668L | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.31KB | 1 |
MC 668 L Price and Stock
Analog Devices Inc HMC668LP3IC AMP GPS 700MHZ-1.2GHZ 16QFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HMC668LP3 |
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HMC668LP3 | 1,076 |
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Analog Devices Inc HMC668LP3EIC AMP GPS 700MHZ-1.2GHZ 16QFN |
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HMC668LP3E |
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HMC668LP3E | 4,892 |
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HMC668LP3E | 193 |
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Analog Devices Inc HMC668LP3TRIC AMP LTE 700MHZ-1.2GHZ 16QFN |
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HMC668LP3TR | Reel |
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HMC668LP3TR | 349 |
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Analog Devices Inc HMC668LP3ETRIC AMP GPS 700MHZ-1.2GHZ 16QFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HMC668LP3ETR | Reel |
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HMC668LP3ETR | 4,890 |
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HMC668LP3ETR | 1,127 |
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Analog Devices Inc 121922-HMC668LP3BOARD EVAL HMC668LP3E |
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121922-HMC668LP3 | Box |
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MC 668 L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
H9720
Abstract: m06g Marking Code SMD databook 937DMQB jm38510/10201bca 5962-8866207NA national semiconductor databook Motorola transistor smd marking codes DM54LS279J lm723
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501MPA LM160J/883 LM161H-MLS LM161H-SMD LM161H/883 LM161J-SMD LM161J/883 LM185-ADJ LM185-2 LM185H-2 H9720 m06g Marking Code SMD databook 937DMQB jm38510/10201bca 5962-8866207NA national semiconductor databook Motorola transistor smd marking codes DM54LS279J lm723 | |
mospetContextual Info: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS = 200V |
OCR Scan |
IRFS650A mospet | |
d 5072 transistor
Abstract: transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243
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MC140) MC140 8088/8085/Z80/6502) OperatN2003 ULN2004 Delhi-110092. d 5072 transistor transistor mc140 817 OPTO-coupler 817 OPTO microprocessor 8255 application seven segment opto 817 MC140 Datasheet IC 8155 8282/8283 eprom 8243 | |
R/KSA 1102Contextual Info: NT3013 PERSONAL DATABANK PRELIMINARY Ver 1.1 Features !Memory -35 telephone banks 8 characters, 16 number digits -8 message banks 8 character, 16 number digits !Keyboard -28 keys !Key-in-tone on/off function !Dual clock timer: year, month, day, hour, minute, weekly |
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NT3013 -76-pin NT3013 dig22 PORT21 PORT20 NT3013H PORT30 PORT31 PORT32 R/KSA 1102 | |
CA3246m
Abstract: CA3227 CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96
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CA3227, CA3246 CA3227 CA3246* TA10854 TA10855, CA3227 CA3246m CA3227E CA3227M CA3227M96 CA3246 CA3246E CA3246M96 | |
T7517A
Abstract: PSOP
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T7517A T7517A: 16-Pin 5-2643C PSOP | |
basic microprocessor block diagram
Abstract: 29C668
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Am29C668 Am29000 11068C-060A 11068C-064A basic microprocessor block diagram 29C668 | |
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Contextual Info: 2N3250 2N3251,A* M AXIMUM RATINGS Symbol 2N3250 2N3251 2N3251A v CEO -4 0 -6 0 Vdc C o lle c to r-B a s e V o lta g e VCBO -5 0 -6 0 V dc E m itte r-B a s e V o lta g e Rating C o lle c to r -E m itte r V o lta g e Unit vebo -5 .0 Vdc C o lle c to r C u rre n t |
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2N3250 2N3251 2N3251 2N3251A O-206AA) 2N3250, | |
T7517a
Abstract: ATTL7583
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T7517A T7517A: 711--G ATTL7583 | |
VMIL100
Abstract: amd k10 block diagram of AMD K10 AMD K6 equivalent AMD K10 Signal AC10 AR10 21306 AMD K5
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Am29C668 Am29000 VMIL100 amd k10 block diagram of AMD K10 AMD K6 equivalent AMD K10 Signal AC10 AR10 21306 AMD K5 | |
DT-26S
Abstract: DS9032 DS-VT200 daiwa DS-VT-200 dallas ds9032
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DS12S4 DS1284 28-pin 28-PIN DS1284 DT-26S DS9032 DS-VT200 daiwa DS-VT-200 dallas ds9032 | |
smd transistor 43t
Abstract: buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds P-T0263-3-2 infineon 3330 BUZ 1025 E304
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OCR Scan |
BUZ102S BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t buz1025 MARKING SMD 43t st smd diode marking code BUZ SMD DIODE BOOK smd marking wds infineon 3330 BUZ 1025 E304 | |
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Contextual Info: I 7 c12l:iE37 QQE3241 1 • T ^ - 'O ^ 'Z O SCS-THOM SON ;UieìE3@ffllieS S G S-THOMSON _ MC 1458 MC1558 3ÜE » DUAL OPERATIONAL AMPLIFIERS ■ ■ ■ ■ ■ ■ L O W P O W E R C O N S U M P T IO N U R G E IN P U T V O L T A G E R A N G E N O LA T C H -U P |
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QQE3241 MC1558 -79-Q MC1458-MC1558 | |
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Contextual Info: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit |
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O-220 C67078-S1343-A2 8235bD5 0235bQ5 | |
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STP2003QFP
Abstract: ATM622-S STP2012 ATM 814
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STP2003QFP: STP2003QFP ATM622-S STP2012 ATM 814 | |
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Contextual Info: IND 004 Effective: 12/1/2010 PREFERRED DISTRIBUTOR PRICE LIST Copper will escalate/de-escalate at time of order shipment Comex Copper Base $3.50 PART NUMBER AWG SIZE Copper Weight/MFT PRICE/MFT 9 12 17 30 12 18 25 46 18 27 37 71 $178 $210 $276 $435 $215 $265 |
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IC 4017 BContextual Info: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 w ords by 8 b its. The in te g ral control circu itry an d lith |
OCR Scan |
4017Y 2048Kx8 bq4017 216-bit bq4017/bq4017Y 2048K IC 4017 B | |
mc 668 LContextual Info: TOSHIBA 2SC5108 2 S C 5 1 08 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm r0.8 ,0.1-i ± MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current |
OCR Scan |
2SC5108 Frequen50 mc 668 L | |
transistor buz
Abstract: 93 ab chip Fly DS 100
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O-220 C67078-S1343-A2 transistor buz 93 ab chip Fly DS 100 | |
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Contextual Info: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process |
OCR Scan |
MT4LS12832 512KB 64-Pin C1993. | |
2SC5108Contextual Info: TOSHIBA 2SC5108 2 S C 5 1 08 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm r0.8 .0.1-i ± MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current |
OCR Scan |
2SC5108 2SC5108 | |
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Contextual Info: /T 7 S C S -T H O M S O N *7M, «IMilLËOTIMO TEA7092 TELEPHONE ANALOG FRONT END SPEECH • DC LINE CURRENT RANGE FROM 6 TO 120mA ■ EXTERNALLY ADJUSTABLE : - Tx AND Rx GAIN - MAXIMUM TRANSMIT LEVEL - RETURN LOSS - SIDETONE NETWORKS - Tx AND Rx AGC LINE CURRENT START UP |
OCR Scan |
TEA7092 120mA TQFP44A | |
03E1
Abstract: 00CF ISD33000 b0334 04D5
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108 046f
Abstract: 03e1 046F 044f 03C24 b 0334 046b
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06K0B 108 046f 03e1 046F 044f 03C24 b 0334 046b | |