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MBT2222
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Unknown
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Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS |
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40.55KB |
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MBT2222A
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Unknown
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Silicon Planar Epitaxial Transistors N-P-N TRANSISTORS |
Original |
PDF
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40.56KB |
1 |
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MBT2222ADW
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Weitron
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Dual General Purpose Transistors |
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PDF
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376.17KB |
6 |
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MBT2222ADW1T1
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On Semiconductor
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General Purpose Transistor Dual NPN; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 |
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159.96KB |
6 |
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MBT2222ADW1T1
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On Semiconductor
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General Purpose Transistor |
Original |
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93.25KB |
8 |
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MBT2222ADW1T1
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On Semiconductor
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General Purpose Transistor |
Original |
PDF
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91.08KB |
8 |
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MBT2222ADW1T1-D
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On Semiconductor
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General Purpose Transistor NPN Silicon |
Original |
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91.08KB |
8 |
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MBT2222ADW1T1G
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On Semiconductor
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TRANS GP BJT NPN 40V 0.6A 6SOT-363 T/R |
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100.73KB |
6 |
MMBT2222A
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2222A
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Shikues Semiconductor
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Original |
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MMBT2222A
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Shandong Jingdao Microelectronics Co Ltd
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NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. |
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MMBT2222A
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CREATEK Microelectronics
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NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. |
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MMBT2222ADW
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CREATEK Microelectronics
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Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. |
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MMBT2222AW
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CREATEK Microelectronics
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Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. |
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MMBT2222AT
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Shikues Semiconductor
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Silicon Epitaxial Planar Transistor for switching and amplifier applications |
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MMBT2222A
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JCET Group
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NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2222AM
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JCET Group
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MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. |
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MMBT2222A
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Microdiode Semiconductor
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SOT-23, NPN, epitaxial planar die construction. |
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MMBT2222
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
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MMBT2222A 1P
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JCET Group
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MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. |
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MMBT2222A
