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    LASCR

    Abstract: OB64D
    Contextual Info: Order this document by 3VEDOB64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 , 2 M DRAM Dual-ln-Line Memory Module DIMM x 6 4 3.3 V, EDO, Buffered 8 and 16 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM) • Single 3.3 V Power Supply, LVTTL-Compatible Inputs and Outputs


    OCR Scan     		3VEDOB64D/D 168-Lead 8MB/16MB: MB641BT58TADG60 MB642BT58TADG60 MB641BT58TADG70 MB642BT58TADG70 LASCR OB64D PDF

    EDO RAM Drawing

    Abstract: MB641BT58TADG60 MB641BT58TADG70 MB642BT58TADG60 MB642BT58TADG70
    Contextual Info: Order this document by 3VEDOB64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2M x 64 DRAM Dual-In-Line Memory Module DIMM 3.3 V, EDO, Buffered 8 and 16 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) • Single 3.3 V Power Supply, LVTTL–Compatible Inputs and Outputs


    Original     		3VEDOB64D/D 8MB/16MB: MB641BT58TADG60 3VEDOB64D EDO RAM Drawing MB641BT58TADG60 MB641BT58TADG70 MB642BT58TADG60 MB642BT58TADG70 PDF