MB 39A 25 Search Results

035H

Abstract: MB 39A 25 diodes 39a transistor WW 179
Contextual Info: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 97004 IRFB4233PbF PDP SWITCH Features l Advanced process technology l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE rating to reduce power dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97004 IRFB4233PbF PDP SWITCH Features l Advanced process technology l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE rating to reduce power dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

400v 20A ultra fast recovery diode

Abstract: IGBT WE 20 NE 50 Z 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST irf 100v 200A IRG4PC50 irg4pc50fd IRG4PC50FDPbF marking code 39a
Contextual Info: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IGBT WE 20 NE 50 Z

Abstract: IRG4PC50FDPBF 035H
Contextual Info: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

60v 39a to220

Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed

60v 39a to220

Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed

Contextual Info: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G • Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com

HEXFET D2PAK

Abstract: D2Pak Package dimensions diode marking code 421
Contextual Info: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G • Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com

Contextual Info: PD-95935A IRFB3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G S VDSS RDS on typ. max. ID

PD-95660

Contextual Info: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed

19-AF

Abstract: AN-994
Contextual Info: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

AN-994

Abstract: IRFZ46N IRFZ46NL IRFZ46NS
Contextual Info: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V

IRFZ48V

Contextual Info: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS ˆ Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V

AN-994

Abstract: IRL1404L IRL1404S
Contextual Info: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω

Contextual Info: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A‡

Contextual Info: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω

Contextual Info: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A‡

95A 640

Abstract: AN-994 IRL1404L IRL1404S
Contextual Info: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω

Contextual Info: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V

AN-994

Abstract: IRFZ46N IRFZ46NL IRFZ46NS
Contextual Info: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V

transistor IRFZ46N

Abstract: AN-994 IRFZ46N IRFZ46NL IRFZ46NS
Contextual Info: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V

ed 89a

Abstract: AN-994 IRL3705N IRL3705NL IRL3705NS ED 89A marking code
Contextual Info: PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3705NSPbF IRL3705NLPbF l l HEXFET Power MOSFET