MAXWELL CLASS S Search Results

Contextual Info: Standard Product Flows – Multi-Chip Products Maxwell Technologies manufactures our multi-chip products using MIL-PRF-38534 as a guideline and we offer four different self-defined product-testing flows: Maxwell class K, Maxwell class H, industrial grade and

Wire Bond Pull

Abstract: Maxwell Class S Mil-Std-883 Wire Bond Pull Method 2011
Contextual Info: Standard Product Flows – Monolithic Products Maxwell Technologies offers four different self defined product-testing flows: Maxwell class S, Maxwell class B, industrial grade and engineering grade. The table below exhibits the test that will be performed to

Contextual Info: 6484 CMOS Quad Rail-to-Rail I/O Op Amp V+ IN+D IN+A IN-A OUT A OUT D IN-D OUT B OUT C IN+C V- IN+B IN-C Logic Diagram FEATURES: DESCRIPTION: • Rad-Pak technology-hardened against natural space radiation • Total dose hardness: - >100 krad Si , depending upon orbit and space mission

tp41c

Abstract: 1 amp FET switch TP41A tp5d TP40D TP-5C TP10D TP5A 24SW tp2d
Contextual Info: 24SW 24 Channel MOSFET Driver LDX_IN LDX_OUT SS_CMD_X 1 of 24 Switches Memory Logic Diagram FEATURES: DESCRIPTION: • • • • • Maxwell Technologies 24SW multi-chip module MCM 24 channel MOSFET driver uses Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

Contextual Info: 28LV010 3.3V 1 Megabit 128K x 8-Bit EEPROM 28LV010 FEATURES: DESCRIPTION: • 3.3V low voltage operation 128k x 8 Bit EEPROM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission

Contextual Info: OP220 Dual Micropower Operational Amplifier V+ OUT A -IN A +IN A V- OP220 OUT B -IN B +IN B Logic Diagram DESCRIPTION: • RAD-PAK Technology • - Total Dose Hardness > 100 Krads Si • Package: - 8 Pin RAD-PAK® Flat Package • Excellent TCVOS -21uV/C MAX

Contextual Info: 27C1512T 512Kb 32K x 16-bit OTP EPROM MCM Memory Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 Krad (Si), depending upon space mission

79C2040

Contextual Info: 79C2040B 20 Megabit 512K x 40-Bit EEPROM MCM FEATURES: DESCRIPTION: 512k x 40-bit EEPROM MCM Maxwell Technologies’ 79C2040B multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

Contextual Info: OP400A Quad Low-Offset, Low-Power Operational Amplifier v+ BIAS OUT VOLTAGE LIMITING NETWORK +IN -IN v- Logic Diagram One Amplifier DESCRIPTION: • RAD-PAK technology-hardened against natural space • radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission

Contextual Info: OP490 Low Voltage Micropower Quad Operational Amplifier Logic Diagram DESCRIPTION: • RAD-PAK technology-hardened against natural space radiation • Package: - 16 pin Rad-Pak® flat package • Low input offset voltage: 5 µV max • Low offset voltage drift

Contextual Info: 976A 16-Bit Analog to Digital Converter 4k 3k 12k 4k Memory Functional Block Diagram FEATURES: DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: > 100 krad Si , depending upon space mission • SEE Performance:

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:

89C1632

Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

Contextual Info: PRELIMINARY 6484 CMOS Quad Rail-to-Rail I/O Op Amp V+ IN+A IN+D IN-A OUT A OUT D IN-D OUT B OUT C IN+C V- IN+B IN-C Logic Diagram FEATURES: DESCRIPTION: • Rad-Pak technology-hardened against natural space radiation • Total dose hardness: - >100 krad Si , depending upon orbit and space mission

OP400

Abstract: OP-400
Contextual Info: OP400 Quad Low-Offset, Low-Power Operational Amplifier v+ BIAS OUT VOLTAGE LIMITING NETWORK +IN -IN v- Logic Diagram DESCRIPTION: • RAD-PAK technology-hardened against natural space radiation • Total dose hardness: - > 100 krad Si , depending upon space mission

Contextual Info: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects @ 25°C

maxwell diagram

Abstract: Maxwell Class S high speed comparator
Contextual Info: 903 High Speed Comparator VCC 1 8 VDD IN+ 2 + 7 OUT IN- 3 - 6 GND VEE 4 5 LATCH DESCRIPTION: • High-speed, low-power voltage comparator • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: 100 krad Si typical; dependent upon orbit

OP400

Contextual Info: OP400 Quad Low-Offset, Low-Power Operational Amplifier v+ BIAS OUT VOL TAGE LIMITING NETWORK +IN -IN v- Logic Diagram DESCRIPTION: • RAD-PAK technology-hardened against natural space • radiation • Total dose hardness: - > 100 krad Si , depending upon space mission

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

79C0832

Contextual Info: 79C0832 8 Megabit 256K x 32-Bit EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging

89C1632

Abstract: 512K x 8 bit sram 32 pin
Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

Contextual Info: OP400 Quad Low-Offset, Low-Power Operational Amplifier v+ BIAS OUT VOL TAGE LIMITING NETWORK +IN -IN v- Logic Diagram DESCRIPTION: • RAD-PAK technology-hardened against natural space • radiation • Total dose hardness: - > 100 krad Si , depending upon space mission

Contextual Info: 124 Low-Power Quad Operational Amplifier Logic Diagram DESCRIPTION: • RAD-PAK technology-hardened against natural space radiation • Total dose hardness: - > 100 krad Si , depending upon space mission • Excellent Single Event Effects: • - SELTH LET = > 90 MeV/mg/cm2

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: