MAXIMUM GAIN S2P Search Results

Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V

GaAs S2p

Abstract: hemt .s2p
Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V

hemt .s2p

Abstract: TGF2023-01 EAR99 at10GHz
Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V

2SC5801

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD Data Sheet NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES <R> • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801)

NESG3032M14

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

nesg2101m05-t1-a

Abstract: NESG2101M05-A
Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •

NESG2101M16

Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG2021M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • • <R> This device is an ideal choice for low noise, high-gain at low current amplifications.

Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG2031M05 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • • • • <R> The device is an ideal choice for low noise, high-gain at low current amplifications.

transistor T1J

Abstract: NESG2101M05-T1 NESG2101M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

S parameters of 5.8 GHz transistor

Abstract: NESG7030M04 T1R rf ZL 58
Contextual Info: A Business Partner of Renesas Electronics Corporation. NESG7030M04 Data Sheet R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3032M14 Data Sheet R09DS0048EJ0300 Rev.3.00 Sep 18, 2012 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG <R> FEATURES • The NESG3032M14 is an ideal choice for low noise, high-gain amplification

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

Contextual Info: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor

NESG3031M05-T1

Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: DATA SHEET NPN SILICON GERMANIUM C RF TRANSISTOR NESG4030M14 NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 1.1 dB TYP., Ga = 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

NESG2021M05

Abstract: NESG2021M05-T1 transistor s2p
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification

Contextual Info: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor with 2 Different Elements in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES • Low voltage operation <R> • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor

NESG3033M14

Abstract: MCR01MZPJ5R6
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NESG3033M14 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold M14, 1208 PKG R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • The NESG3033M14 is an ideal choice for low noise, high-gain amplification