MAXIMUM CURRENT RATING OF DIODES Search Results
MAXIMUM CURRENT RATING OF DIODES Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| UDS2983R/B |
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UDS2983 - High Voltage, High Current Source Driver |
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| UDS2981R/B |
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UDS2981 - High Voltage, High Current Source Driver |
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| CLC432A/BPA |
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CLC432 - AMPLIFIER, CURRENT FEEDBACK - Dual marked (5962-9472502MPA) |
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| LM1578AH/883 |
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LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) |
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| CLC400A/BPA |
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CLC400 - OP AMP, WIDEBAND, FAST SETTLING, CURRENT FEEDBACK - Dual marked (5962-8997001PA) |
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MAXIMUM CURRENT RATING OF DIODES Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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GTO triacContextual Info: 2. MAXIMUM RATINGS 2.1 Difinition of Maximum Ratings The maximum permissible value of current to be supplied to, voltage applied to or reverse power dissipation, etc., of; diodes, rectifiers, thyristors, triacs, etc., is defined as the maximum rating. In designing semiconductor devices, full recognition of the maximum ratings is of prime importance for |
OCR Scan |
-217A) GTO triac | |
Zener diode SZ 600Contextual Info: Zener Diodes MAZ4000N Series MA4000N Series Silicon planar type Unit: mm For stabilization of power supply • Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Average forward current IF(AV) 250 mA Repetitive peak forward current |
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MAZ4000N MA4000N MAZ4000 DO-34) Zener diode SZ 600 | |
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Contextual Info: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns • • • High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at • Case: SOT23 |
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MMBD3004A/C/S 100nA J-STD-020 MIL-STD-202, DS30353 | |
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Contextual Info: MMBD3004A/C/S HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage Rating: 350V Low Reverse Current: Maximum of 100nA when VR = 240V at Case: SOT23 |
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MMBD3004A/C/S 100nA J-STD-020 MIL-STD-202, DS30353 | |
KAE V9
Abstract: MMBD3004CQ-7-F MARKING yw SOT23
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MMBD3004A/C/S 100nA AEC-Q101 J-STD-020 DS30353 KAE V9 MMBD3004CQ-7-F MARKING yw SOT23 | |
T01A transistor
Abstract: smd transistor device marking p18 T01A transistor T01A 24S12 24S15 smd transistor p16 smd transistor p15
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PXA15-xxSxx PXA15 TR-NWT-000332 T01A transistor smd transistor device marking p18 T01A transistor T01A 24S12 24S15 smd transistor p16 smd transistor p15 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G Features • We declare that the material of product compliance with RoHS requirements. 3 1 DEVICE MARKING 2 LBAW56WT1G = A1 SC–70 MAXIMUM RATINGS TA = 25°C Rating Reverse Voltag Forward Current |
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LBAW56WT1G 3000/Tape LBAW56WT3G 10000/Tape | |
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Contextual Info: Zener Diodes MAZ8xxx Series MA8000 Series Silicon planar type Unit: mm For stabilization of power supply 1.25±0.1 0.7±0.1 0.35±0.1 1 • Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Repetitive peak forward current IFRM 200 |
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MA8000 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G Features • We declare that the material of product compliance with RoHS requirements. 3 1 DEVICE MARKING 2 LBAW56WT1G = A1 SC–70 MAXIMUM RATINGS TA = 25°C Rating Reverse Voltag Forward Current |
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LBAW56WT1G 3000/Tape LBAW56WT3G 10000/Tape | |
SMD TRANSISTOR MARKING P28
Abstract: Pxa 920 marking P33 transistor p28 smd 40533 k 3531 transistor
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PXA15-xxWSxx PXA15-24WSXX PXA15-48WSXX PXA15WS TR-NWT-000332 SMD TRANSISTOR MARKING P28 Pxa 920 marking P33 transistor p28 smd 40533 k 3531 transistor | |
ETS300
Abstract: 7G-0047-C 7G-0047C-F
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PXB15-xxDxx PXB15-12DXX PXB15-24DXX PXB15-48DXX PXB15D TR-NWT-000332 ETS300 7G-0047-C 7G-0047C-F | |
12S05
Abstract: ETS300 k 3531 transistor
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PXB15-xxSxx PXB15-12SXX PXB15-24SXX PXB15-48SXX PXB15S TR-NWT-000332 12S05 ETS300 k 3531 transistor | |
zener diode a24Contextual Info: Zener Diodes MAZ8000 Series MA8000 Series Silicon planar type 1.25±0.1 0.7±0.1 Unit: mm 0.35±0.1 For stabilization of power supply 1 • Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit IFRM 200 mA Repetitive peak forward current |
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MAZ8000 MA8000 MAZ3000 zener diode a24 | |
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Contextual Info: Zener Diodes MAZX000 Series MA2Z000 Series Silicon planar type Unit : mm For stabilization of power supply 4.4 ± 0.3 • Features + 0.1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 2.15 ± 0.3 2 Symbol Rating Unit Repetitive peak forward current |
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MAZX000 MA2Z000 | |
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
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1N3881
Abstract: 1N3883 1N3889 1N3893 DO-203AA 12FL 16FL 1N3879 1N3880
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1N3879 1N3889 6/12/16FL DO-203AA 18-Jul-08 1N3881 1N3883 1N3893 DO-203AA 12FL 16FL 1N3880 | |
40HFL
Abstract: 40HFL100S05 40HFL60S02 40HFL60S05 40HFL60S10 40HFL80S05 40HFL80S10 70HFL 85HFL DO-203AB
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40HFL, 70HFL, 85HFL DO-203AB 85HFL 70HFlectual 18-Jul-08 40HFL 40HFL100S05 40HFL60S02 40HFL60S05 40HFL60S10 40HFL80S05 40HFL80S10 70HFL DO-203AB | |
12FL
Abstract: 16FL 1N3879 1N3880 1N3881 1N3883 1N3889 1N3893 DO-203AA 1N3889 Series
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1N3879 1N3889 6/12/16FL DO-203AA 11-Mar-11 12FL 16FL 1N3880 1N3881 1N3883 1N3893 DO-203AA 1N3889 Series | |
diode 40 S02Contextual Info: 1N3879 R , 1N3889(R), 6/12/16FL(R) Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 6/12/16 A FEATURES • Short reverse recovery time RoHS • Low stored charge COMPLIANT • Wide current range • Excellent surge capabilities • Standard JEDEC types |
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1N3879 1N3889 6/12/16FL DO-203AA 1N3879. 1N3883. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. diode 40 S02 | |
40HFL
Abstract: 40HFL60S02 40HFL60S05 40HFL60S10 70HFL 85HFL DO-203AB
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40HFL, 70HFL, 85HFL 2002/95/EC DO-203AB 85HFL 18-Jul-08 40HFL 40HFL60S02 40HFL60S05 40HFL60S10 70HFL DO-203AB | |
70HFL60S02
Abstract: 40HFL 40HFL60S02 40HFL60S05 40HFL60S10 70HFL 85HFL DO-203AB
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40HFL, 70HFL, 85HFL 2002/95/EC DO-203AB 85HFL 11-Mar-11 70HFL60S02 40HFL 40HFL60S02 40HFL60S05 40HFL60S10 70HFL DO-203AB | |
Herrmann KB 60
Abstract: of diode herrmann bridge rectifier herrmann silicon bridge rectifier 3KHB05 3KHB10 2KHBS4
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3KHB05 3KHB10 Plot-101, Herrmann KB 60 of diode herrmann bridge rectifier herrmann silicon bridge rectifier 3KHB10 2KHBS4 | |
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Contextual Info: 40HFL, 70HFL, 85HFL Series Vishay High Power Products Fast Recovery Diodes Stud Version , 40 A/70 A/85 A FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Stud cathode and stud anode versions |
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40HFL, 70HFL, 85HFL 2002/95/EC DO-203AB 85HFL 245electronic 2002/95/EC. 2002/95/EC 2011/65/EU. | |
herrmann bridge rectifier
Abstract: chasis diodes herrmann herrmann silicon bridge rectifier bridge herrmann
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5KHBS05 5KHBS10 5KHBS10) Plot-101, herrmann bridge rectifier chasis diodes herrmann herrmann silicon bridge rectifier bridge herrmann | |