Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MAX POWER 90 Search Results

    MAX POWER 90 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ML4800CP
    		Rochester Electronics LLC ML4800 - Power Factor Controller With Post Regulator, Voltage-mode, 1A, 250kHz Switching Freq-Max, BICMOS, PDIP16 PDF Buy
    MGN1D120603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    		Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF

    MAX POWER 90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: for Power Supply PFC3520V Series RED BLUE WHITE BLACK Mechanical Dimension: Unit: mm 90.0 5.0 24.0 Max. 35.0 Max. 2 Min. Features 12.0Max. 55.5 Max. Harmonics current regulation Low leakage flux suitable for power supply 41.0 Max. 46.0 0.5 The PFC Power Factor Corrector chokes


    Original     		PFC3520V 60Hz/1V PFC3520V01 PFC3520V02 PDF

    Contextual Info: PFC Chokes for Power Supply PFC3520V Series RED BLUE WHITE BLACK Mechanical Dimension: Unit: mm 90.0 5.0 24.0 Max. 35.0 Max. 2 Min. Features 12.0Max. 55.5 Max. Harmonics current regulation Low leakage flux suitable for power supply 41.0 Max. 46.0 0.5 The PFC Power Factor Corrector chokes


    Original     		PFC3520V 60Hz/1V PFC3520V01 PFC3520V02 PDF

    Contextual Info: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: MS6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down MS6264L - 467.5mW (Max.) Operating


    OCR Scan     		MS6264 495mW MS6264L MS6264 S6264-70PC P28-1 S6264-70FC S28-2 S6264L-70PC PDF

    i2764

    Abstract: a2764 8k eprom 2764 INTEL 2764
    Contextual Info: LH5763/J FEATURES • 8,192 x 8 bit organization • Access times: LH5763J: 70/90 ns MAX. LH5763: 90 ns (MAX.) • Single +5 V power supply • Low power consumption: Operating: 315 mW (MAX.) Standby: 1.05 mW (MAX.) • • • CMOS 64K (8K x 8) OTPROM/EPROM


    OCR Scan     		LH5763/J LH5763J: LH5763: 28-pin, 600-mil LH5763J LH5764he i2764 a2764 8k eprom 2764 INTEL 2764 PDF

    Contextual Info: CYPRESS Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10,15, 25 ns — 115 mA max. commercial (7 ns) — 130 mA max. military/industrial (15, 25 ns) • Quarter power version — 55 mA max. commercial • CMOS Flash technology for electrical


    OCR Scan     		PALCE20V8 LCE20V LCE20V8 20V8-2 PDF

    ee8 transformer

    Abstract: EE8.3 ee8 power transformer
    Contextual Info: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54


    Original     		300KHz 300mW 100KHz 900mW ee8 transformer EE8.3 ee8 power transformer PDF

    EE8.3

    Abstract: ee8 power transformer ee8 transformer
    Contextual Info: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54


    Original     		300KHz 300mW 100KHz 900mW EE8.3 ee8 power transformer ee8 transformer PDF

    Contextual Info: High Power Limiters EL0050 1.5 GHz to 1.85GHz Power Input Specifications RF Frequency Peak Power Average Power Pulse Width Load VSWR 1.5GHz to 1.85GHz 90 Watts max 25 Watts (max) 24ms uSec ± 1.4:1 Microwave Specifications Insertion Loss Recovery Time Flat Leakage


    Original     		EL0050 85GHz PDF

    AMF-3B

    Abstract: AMF-2B-020060-70-30P
    Contextual Info: MEDIUM POWER AMPLIFIERS MODEL MODEL NUMBER NUMBER OPERATING OPERATING FREQUENCY FREQUENCY GHz (GHz) GAIN GAIN (dB, (dB,Min.) Min.) GAIN GAIN FLATNESS FLATNESS (±dB, (±dB,Max.) Max) NOISE NOISE TEMP. FIGURE (dB, (dB,Max.) Max.) OUTPUT OUTPUT POWER POWER


    Original     		AMF-3F-177220-60-17P AMF-4F-177220-50-17P AMF-5F-177220-50-17P AMF-6F-177220-50-17P 128-079084-33P AMF-5B-097102-33P AMF-9B-140145-37P-WG AMF-7B-140160-30P AMF-7B-180215-23P AMF-3B AMF-2B-020060-70-30P PDF

    Contextual Info: 2SC3866 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SC3866 PDF

    Contextual Info: 2N1242A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1242A PDF

    GH0781HA2C

    Contextual Info: Laser Diodes GH0781HA2C GH0781HA2C High Power Laser Diode for MAX. ✕24 • ■ Speed CD-R Drive 784nm-110mW Outline Dimensions (Unit : mm) ❇2 1.0±0.15 ❇2 0.4±0.1 X 90 ±2 1 2 ❇1 Y ø2.0 Features (1) Maximum optical power output : 110mW (CW) (2) High power (pulse MAX. 160mW), MAX. ◊24 speed writing


    Original     		GH0781HA2C 784nm-110mW) 110mW 160mW) 784nm GH0781HA2C PDF

    Contextual Info: SML814 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		SML814 PDF

    Contextual Info: PG1473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20


    Original     		PG1473 Freq40M PDF

    Contextual Info: SDT3921 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		SDT3921 Freq10M PDF

    Contextual Info: SDT3922 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		SDT3922 Freq10M PDF

    Contextual Info: PTC105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)72 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A)15mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PTC105 Freq100k PDF

    Contextual Info: ECG2427 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80ã V(BR)CBO (V)90 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		ECG2427 PDF

    Contextual Info: PG2326 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)90 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0


    Original     		PG2326 Freq60MÃ PDF

    Contextual Info: PT2909 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PT2909 Freq40M PDF

    Contextual Info: PG1481 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)10


    Original     		PG1481 Freq40M PDF

    Contextual Info: PT2519 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PT2519 Freq100M PDF

    Contextual Info: 2SD2202S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)3


    Original     		2SD2202S PDF

    Contextual Info: SDT3923 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		SDT3923 Freq10M PDF