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    MAX POWER 90 Search Results

    MAX POWER 90 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7662MTV/B
    		Rochester Electronics LLC ICL7662 - Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS PDF Buy
    ICL7660SMTV
    		Rochester Electronics LLC ICL7660 - Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8 PDF Buy
    LM1578AH/883
    		Rochester Electronics LLC LM1578 - Switching Regulator, Current-mode, 0.75A, 100kHz Switching Freq-Max, MBCY8 - Dual marked (5962-8958602GA) PDF Buy
    LM6161J
    		Rochester Electronics LLC LM6161 - Operational Amplifier, 1 Func, 7000uV Offset-Max, BIPolar, CDIP8 PDF Buy
    LM710CH
    		Rochester Electronics LLC LM710 - Comparator, 1 Func, 5000uV Offset-Max, 40ns Response Time, BIPolar, MBCY8 PDF Buy

    MAX POWER 90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: for Power Supply PFC3520V Series RED BLUE WHITE BLACK Mechanical Dimension: Unit: mm 90.0 5.0 24.0 Max. 35.0 Max. 2 Min. Features 12.0Max. 55.5 Max. Harmonics current regulation Low leakage flux suitable for power supply 41.0 Max. 46.0 0.5 The PFC Power Factor Corrector chokes


    Original     		pfc3520v60hz/1vpfc3520v01pfc3520v02 PDF

    Contextual Info: PFC Chokes for Power Supply PFC3520V Series RED BLUE WHITE BLACK Mechanical Dimension: Unit: mm 90.0 5.0 24.0 Max. 35.0 Max. 2 Min. Features 12.0Max. 55.5 Max. Harmonics current regulation Low leakage flux suitable for power supply 41.0 Max. 46.0 0.5 The PFC Power Factor Corrector chokes


    Original     		pfc3520v60hz/1vpfc3520v01pfc3520v02 PDF

    Contextual Info: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: MS6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down MS6264L - 467.5mW (Max.) Operating


    OCR Scan     		ms6264495mwms6264ls6264-70pc+4p28-1s6264-70fcs28-2s6264l-70pc PDF

    i2764

    Abstract: a2764 8k eprom 2764 INTEL 2764
    Contextual Info: LH5763/J FEATURES • 8,192 x 8 bit organization • Access times: LH5763J: 70/90 ns MAX. LH5763: 90 ns (MAX.) • Single +5 V power supply • Low power consumption: Operating: 315 mW (MAX.) Standby: 1.05 mW (MAX.) • • • CMOS 64K (8K x 8) OTPROM/EPROM


    OCR Scan     		lh5763/jlh5763jlh576328-pin+6600-millh5764hei2764a27648k eprom 2764intel 2764 PDF

    Contextual Info: CYPRESS Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10,15, 25 ns — 115 mA max. commercial (7 ns) — 130 mA max. military/industrial (15, 25 ns) • Quarter power version — 55 mA max. commercial • CMOS Flash technology for electrical


    OCR Scan     		palce20v8lce20vlce20v820v8-2 PDF

    ee8 transformer

    Abstract: EE8.3 ee8 power transformer
    Contextual Info: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54


    Original     		300khz300mw100khz900mw+3ee8 transformeree8.3ee8 power transformer PDF

    EE8.3

    Abstract: ee8 power transformer ee8 transformer
    Contextual Info: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54


    Original     		300khz300mw100khz900mw+3ee8.3ee8 power transformeree8 transformer PDF

    Contextual Info: High Power Limiters EL0050 1.5 GHz to 1.85GHz Power Input Specifications RF Frequency Peak Power Average Power Pulse Width Load VSWR 1.5GHz to 1.85GHz 90 Watts max 25 Watts (max) 24ms uSec ± 1.4:1 Microwave Specifications Insertion Loss Recovery Time Flat Leakage


    Original     		el005085ghz PDF

    AMF-3B

    Abstract: AMF-2B-020060-70-30P
    Contextual Info: MEDIUM POWER AMPLIFIERS MODEL MODEL NUMBER NUMBER OPERATING OPERATING FREQUENCY FREQUENCY GHz (GHz) GAIN GAIN (dB, (dB,Min.) Min.) GAIN GAIN FLATNESS FLATNESS (±dB, (±dB,Max.) Max) NOISE NOISE TEMP. FIGURE (dB, (dB,Max.) Max.) OUTPUT OUTPUT POWER POWER


    Original     		amf-3f-177220-60-17pamf-4f-177220-50-17pamf-5f-177220-50-17pamf-6f-177220-50-17p+7128-079084-33pamf-5b-097102-33pamf-9b-140145-37p-wgamf-7b-140160-30pamf-7b-180215-23pamf-3bamf-2b-020060-70-30p PDF

    Contextual Info: 2SC3866 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2sc3866 PDF

    Contextual Info: 2N1242A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2n1242a PDF

    GH0781HA2C

    Contextual Info: Laser Diodes GH0781HA2C GH0781HA2C High Power Laser Diode for MAX. ✕24 • ■ Speed CD-R Drive 784nm-110mW Outline Dimensions (Unit : mm) ❇2 1.0±0.15 ❇2 0.4±0.1 X 90 ±2 1 2 ❇1 Y ø2.0 Features (1) Maximum optical power output : 110mW (CW) (2) High power (pulse MAX. 160mW), MAX. ◊24 speed writing


    Original     		gh0781ha2c784nm-110mw110mw160mw+1784nm PDF

    Contextual Info: SML814 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		sml814 PDF

    Contextual Info: PG1473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20


    Original     		pg1473freq40m PDF

    Contextual Info: SDT3921 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		sdt3921freq10m PDF

    Contextual Info: SDT3922 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		sdt3922freq10m PDF

    Contextual Info: PTC105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)72 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A)15mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		ptc105freq100k PDF

    Contextual Info: ECG2427 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80ã V(BR)CBO (V)90 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		ecg2427 PDF

    Contextual Info: PG2326 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)90 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0


    Original     		pg2326freq60m PDF

    Contextual Info: PT2909 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		pt2909freq40m PDF

    Contextual Info: PG1481 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)10


    Original     		pg1481freq40m PDF

    Contextual Info: PT2519 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		pt2519freq100m PDF

    Contextual Info: 2SD2202S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)3


    Original     		2sd2202s PDF

    Contextual Info: SDT3923 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		sdt3923freq10m PDF