MAX 7910 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 0 0 1 7 7 3 5 Tlô I SMfiK C M O S SRAM KM 791001J 131,072 WORD x 9 Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 12.5, 15, 20ns Max. • Low Power Dissipation KM791001J-12: 200mA (Max.)

BP317

Abstract: transistor marking 44 sot23 marking AO4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 PMBS3904/L NPN general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification NPN general purpose transistor PMBS3904/L FEATURES PINNING • Low current max. 100 mA

ba278

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

BF485PN

Abstract: MLD392
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BF485PN NPN/PNP high voltage transistors Product specification 2000 Aug 02 Philips Semiconductors Product specification NPN/PNP high voltage transistors BF485PN FEATURES PINNING • High voltage max. 350 V

BP317

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBS3906/L PNP general purpose transistor Product specification 2000 Nov 29 Philips Semiconductors Product specification PNP general purpose transistor PMBS3906/L FEATURES PINNING • Low current max. 100 mA

diode smd ED 68

Abstract: diode smd ED 74 diode smd ED 84 sc793 BA278 BP317 diode smd marking ed diode ED 84 smd 816
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

Contextual Info: Dense Packaging A 2.00mm .079" Pitch Milli-Grid Board-to-Board Receptacle \ FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 125V Current: 1.0A Contact Resistance: 25mW max. Dielectric Withstanding Voltage: 1250V Insulation Resistance: 1000 MW min.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 Aug 04 2001 Jun 11 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A

jedec package TO-236AB

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 Aug 04 2001 Jun 11 Philips Semiconductors Product specification PNP BISS transistor PMMT591A FEATURES PINNING • High current max. 1 A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 2PA1774 PNP general purpose transistor Product specification Supersedes data of 1999 Jun 01 2000 Dec 12 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774 FEATURES PINNING • Low current max. 100 mA

Philips MARKING CODE top e4

Abstract: C6V2 ST marking code C9 BZX585 BZX585-B2V4 BZX585-B2V7 BZX585-B3V0 BZX585-B3V3 BZX585-B3V6 BZX585-B3V9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Product specification Supersedes data of 2000 Jun 06 2000 Oct 20 Philips Semiconductors Product specification Voltage regulator diodes BZX585 series FEATURES PINNING • Total power dissipation: max. 300 mW

Contextual Info: Features and Benefits • Sizes 4 to 50 circuits ■ Dual beam contact design ensures reliable electrical performance ■ Molded-in void locations offered for polarization to mating connector Electrical Voltage: 125V Current: 1.0A Contact Resistance: 25mΩ max.

79107-0054

Abstract: 79107-0016 LR19980 MOLEX 87089 79107-0010
Contextual Info: Dense Packaging A 2.00mm .079" Pitch Milli-Grid Board-to-Board Receptacle FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 125V Current: 1.0A Contact Resistance: 25mΩ max. Dielectric Withstanding Voltage: 1250V Insulation Resistance: 1000 MΩ min.

Contextual Info: Dense Packaging A 2.00mm .079" Pitch Milli-Grid Board-to-Board Receptacle \ FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 125V Current: 1.0A Contact Resistance: 25mΩ max. Dielectric Withstanding Voltage: 500V Insulation Resistance: 1000 MΩ min.

Contextual Info: Features and Benefits Electrical • Sizes 4 to 50 circuits Voltage: 125V Current: 1.0A ■ Dual beam contact design ensures reliable electrical performance Contact Resistance: 25m£2 max. Dielectric Withstanding Voltage: 500V 9 Molded-in void locations offered for polarization to

diode smd ED 74

Abstract: diode smd ED 84 diode smd ed 68 st smd diode marking code DE BA277 "MARKING CODE M2" BA277-01 BP317 SOD723A smd marking code diode ME
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277-01 Band-switching diode Preliminary specification 2001 Sep 07 Philips Semiconductors Preliminary specification Band-switching diode BA277-01 PINNING FEATURES • Small plastic SMD package PIN DESCRIPTION • Continuous reverse voltage: max. 35 V

BP317

Abstract: PBSS5140T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5140T PNP BISS transistor Product specification 2000 Nov 16 Philips Semiconductors Product specification PNP BISS transistor PBSS5140T FEATURES PINNING • High current max. 1 A PIN • Low collector-emitter saturation voltage ensures

AD8320

Abstract: AD9853 AD9856 INTERPOLATOR 6 BITS SIN COS DATA CLK
Contextual Info: CMOS 180 MHz Quadrature Digital Upconverter a AD9856 Preliminary Technical Information FEATURES Low power: 400 mW@ max. clock speed Space-saving surface-mount packaging Bi-directional control bus interface Supports burst and continuous Tx modes 4 stored pin-selectable modulator profiles

7900F

Abstract: plug 3.5mm jack female 3080-9 Coaxicom plug 3.5mm female SMA Reverse 50 ohm termination 5230-7-C coaxicom coaxicom catalog 3993A tnc bulkhead jack
Contextual Info: COMPONENTS ATTENUATORS, PHASE ADJUSTERS, DC BLOCKS, DUST CAPS, SHORTS INTER SERIES ADAPTERS INTRODUCTION & 2.4 MM, 2.9 MM INTER SERIES NOTE: ATTENUATORS AVAILABLE IN ADDITIONAL VALUES THAN THOSE SHOWN. CALL FOR AVAILABILITY. DC-18 GHz TYPE N ATTENUATORS VSWR 1.35:1 MAX.

Contextual Info: Dense Packaging 2.00mm .079" Pitch Milli-Grid Flex-to-Board Receptacle FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 125V Current: 1.0A applications Contact Resistance: 25mW max. • IR, vapor-phase and wave solder Surface Mount Compatible Dielectric Withstanding Voltage: 1250V

74701

Abstract: 2222 463 88201 marking code KP 11802 77509 13001 datasheet 13001 transistor transistor 13002 74703 transistor 13001
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ∅d ltot lmax ∅ 1.3 lt Supplied loose in box, taped on reel or unidirectional Lead (Pb)-free and RoHS-compliant product

KP 460

Abstract: 71803 74701 77502 transistor 13002 73301 polypropylene capacitors KP 77509 2222 463 81002 vishay 86802
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ∅d ltot lmax ∅ 1.3 lt Supplied loose in box, taped on reel or unidirectional Lead (Pb)-free and RoHS-compliant product

Contextual Info: Dense Packaging 2.00mm .079" Pitch Milli-Grid Flex-to-Board Receptacle FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 125V Current: 1.0A applications Contact Resistance: 25mΩ max. • IR, vapor-phase and wave solder Surface Mount Compatible Dielectric Withstanding Voltage: 500V

vishay 86802

Abstract: 81202 KP 460
Contextual Info: KP 460 to 464 Vishay BCcomponents Polypropylene Film Foil Capacitors KP Axial Epoxy Lacquered Type FEATURES 168x12 halfpage 7.2 max ltot (1) ≤1 ≤1 ltot lmax lmax e3 LEADS Ød Ø1.3 lt Supplied loose in box, taped on reel or unidirectional dmax lt 16.5