MAX 619 CS AC Search Results

CSD2410

Abstract: CSD2425 CSD2450 CSD2475 CSD2490 CSE2410 CSE2425 CSE2450 CSE2475 CSE2490
Contextual Info: Series CS 10-90Amp • 120/240 Vac • AC OUTPUT • Low Leakage • SCR Output • Panel Mount • Zero Voltage Switching MODEL NUMBERS The Series CS has an SCR AC switch output featuring low off-state leakage 1mA, snubberless , zero-voltage switching and a broadened operating

CSD2410

Abstract: CSD2425 CSD2450 CSD2475 CSD2490 CSE2410 CSE2425 CSE2450 CSE2475 CSE2490
Contextual Info: Series CS 10-90Amp • 120/240 Vac* AC OUTPUT The Series CS has an SCR AC switch output featuring low off-state leakage 1 mA, snubberless , zero-voltage switching and a broadened operating range (24-280Vac). This wide range permits optimum performance at both

CSD2410

Abstract: CSD2425 CSD2450 CSD2475 CSD2490 CSE2410 CSE2425 CSE2450 CSE2475 CSE2490
Contextual Info: Series CS 10-90Amp • 120/240 Vac • AC OUTPUT • Low Leakage • SCR Output • Panel Mount • Zero and Random Voltage Switching • Internal Overvoltage Protection Available MODEL NUMBERS The Series CS has an SCR AC switch output featuring low off-state leakage

crydom csd2425

Abstract: CSD2410 CSD2425 CSD2450 CSD2475 CSD2490 CSE2410 CSE2425 CSE2450 CSE2475
Contextual Info: Series CS 10-90Amp • 120/240 Vac • AC OUTPUT • Low Leakage • SCR Output • Panel Mount • Zero Zer Voltage Switching The Series CS has an SCR AC switch output featuring low off-state leakage 1mA, snubberless , zero-voltage switching and a broadened operating

max 619 cs ac

Contextual Info: SEi - Radiation Hardened 32C408RP 4 Megabit 512k x 8-bit CMOS SRAM A18 1 32 Vcc A15 A16 A14 A17 A12 A7 WE A13 A6 A8 A5 A9 SEi 32C408RP A4 A3 A11 A2 OE A10 A1 A0 CS I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 Vss I/O4 16 17 I/O3 Features: •RAD-PAK Technology Hardened Against

Contextual Info: JAN 3 6 199^ molate 64K x 16 SRAM Module Issue 1.1 : Novem ber1990 M S 1664R K X ADVANCE PRODUCT INFORMATION Semiconductor Inc. 66,536 x 16 CMOS High Speed Static RAM Pin Definition Features Fast Access Times of 35,45,55 ns 40 pin Single-In-Line package Separate upper byte and lower byte control

Contextual Info: 2Meg x 8 CMOS SRAM Module molate MS82000RKX Issue 1.0: July 1990 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor me 2,097,152 x 8 CMOS High Speed Static RAM Pin Definition Features 1 A20 Fast Access Times of 85/100/120 ns Low Power Standby 80 mW typ. 160 jiW (typ.)-L version

Contextual Info: 512KW B molate MSX0029-10/12/15 Issue dated 02/15/89 Sem iconductor Pin Definition 524,288 x 8 CMOS High Speed Static RAM NC Vee WE D2 D3 DO A1 A2 A3 A4 GND OS A10 A ll AS A13 A14 NC CS A1S A16 A12 A1S AS 01 GNO A0 A7 AS A9 D7 04 06 A17 Voc T5E Features Fast Access Times of 100/120/150

MOSAIC SEMICONDUCTOR

Abstract: CD731
Contextual Info: molate MSX0029-10/12/15 Issue dated 02/15/89 Semiconductor Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features Fast Access Times of 100/120/150 Low Power Standby 68 mW typ. 160 uW (typ.) - LP Low Power Operation 108 mW at 1MHz Completely Static Operation

27512 eprom

Abstract: 864F
Contextual Info: MAY 18 19« 64K x 8 SRAM Module molaic MS864FKE-10/12/15 Issue 1.6: April 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r inc. — - 65,536 x 8 CMOS High Speed Static RAM Features ' N Pin Definition Fast Access Times of 100,120,150 ns

Contextual Info: 64 K x 24 SRAM Module molate MS2464FKX Issue 1.1 : March 1988 ADVANCED PRODUCT INFORMATION Mosaic Sem iconductor Inc. 65,536 x 24 CMOS High Speed Static RAM Features Pin Definition Fast Access Times of 90/100/120 Standard 48 pin DIL footprint Low Power Standby 60mW typ.

Contextual Info: 2M x 8 SRAM MODULE SYS82000RKXC - 70/85/10/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.2 : January 1999 Description Features The SYS82000RKXC is a plastic 16Mbit Static RAM Module housed in a standard 38 pin Single InLine package organised as 2M x 8 with access

27512 eprom

Abstract: RC 4565
Contextual Info: 64K x 8 SRAM Module moìaic MS864FKE-10/12/15 Issue 1.6: April 1992 ADVANCE PRODUCT INFORMATION Semiconductor 65,536 x 8 CMOS High Speed Static RAM Features Pin Definition Fast Access Times of 100,120,150 ns Standard 28 pin DIL footprint Low Power Standby 10 mW typ.

Contextual Info: HAv ì a t*H 256K X 8 SRAM molaic MS8256SC-55/70/85 Issue 3.1 : April 1992 ^ i n Definition S e m ic o n d u c to r NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND 262,144 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 55/70/85 ns. JEDEC Standard 32 pin DIL footprint.

Contextual Info: «W i « «fe 512K X 8 SRAM moiaic MS8512SC-55/70/85 Issue 3.1: April 1992 Pin Definition S e m ic o n d u c t o r In c . 524,288 x 8 CMOS High Speed Static RAM A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DO D1 D2 GND Features Very Fast Access Times of 55/70/85 ns.

Contextual Info: 128 k x 8 EEPROM molate ME8128SCX Issue 1.2 : March 1988 S e m ic o n d u c to r Inc. ADVANCED PRODUCT INFORMATION 131,072 x 8 CMOS High Speed EEPROM Features Pin D efinition Fast Access Times of 260/300/350 nS Half populated version ME864SCX available Standard 32 pin DIL footprint

7805l

Abstract: ADS7805 TM5004 7805LPRP 8D-13 78o5 7305l
Contextual Info: For Space Applications INCORPORATO Tel: 619 452-4167 Fax: (619) 452-5499 *1011241 000034b 27b • 344 Powered by ICminer.com Electronic-Library Service CopyRight 2003 CONVERTER ELECTRONICS AtoD ¿i 16 bit Q p A p p RADHARD S e I's 7805LPRP (RP for RAD-PAK )

Contextual Info: Issue 1.0 : March 1999 Description Features The SYS816000 is an industry standard plastic 128Mbit Static RAM Module housed in a 40 pin plastic Single-in-line package organised as 16M x 8, with access times of 70/85 and 100ns. The module utilizes state of the art packaging technology to give a height

Contextual Info: «fr 128K X 8 SRAM Module molaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Semiconauctor "A Pin D efinition 4,194,304 bit CMOS High Speed Static RAM Features Fast Access times of 85/100/120 ns. JEOEC 68 J leaded Ceramic Surface Mount Package.

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E ]> D0D1257 437 • ■ M0 C 256K X 8 S R A M moXaic MS8256SC-10/ 12/15 Issue 2.0 : September 1990 PRELIMINARY Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Features Access Times of 100/120/150 ns JEDEC Standard 32 pin OIL footprint

Contextual Info: 3U0 i »yyj^ 256K x 8 CMOS SRAM molale MSM8256-45/55/70 Issue 2.1 : August 1992 PRELIMINARY S e m ic o n d u c t o r In c Pin Definition 262,144 x 8 CMOS High Speed Static RAM Package Type- •s \v Features Very Fast Access Times of 45/55/70 ns JEDEC Standard 32 pin Footprint

64 CERAMIC LEADLESS CHIP CARRIER LCC

Contextual Info: 512K x 8 SRAM MSM8512 - 020/025/35 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.0 : January 1999 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised as 512K x 8 with access times from 20ns to 35ns

Contextual Info: 'S - PUMA 2S4000 molate PUMA 2S4000-45/55/70 Issue 3 2 . : JANUARY 1993 S e m ico n d u cto r 4,194,304 bit CMOS High Speed Static RAM Pin Definition Features 1 User Configurable as 8,16 or 32 bit wide Very Fast Access times of 45/55/70 ns Pin grid array gives 2:1 improvement over DIP

4023 Ci

Contextual Info: 512K x 8 SRAM MSM8512 - 70/85/10 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.3 : January 1999 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised as 512K x 8 with access times from