MATRA-HARRIS SEMICONDUCTOR Search Results

MATRA-HARRIS SEMICONDUCTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET	Datasheet
TCK423G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK422G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK424G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G		Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet

MATRA-HARRIS SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
87C51FA Abstract: siemens 80c32 P80C32 80C51 SAB80C31 Microcontroller Cross-Reference 80C31BH-1 80C31BH-2 80C51BH 80C51BH-1 Contextual Info: Philips Semiconductors 8051 microcontroller cross-reference guide CMOS INTEL SIEMENS OKI MATRA/HARRIS PHILIPS SEMICONDUCTORS 80C31BH 80C31BH-1 80C31BH-2 SAB 80C31 MSM80C31 80C31 80C31-1 80C3151 PCB80C31BH-2/SC80C31BCC PCB80C31BH-3/SC80C31BCG /SC80C31BCB 80C51BH	Original	80C31BH 80C31BH-1 80C31BH-2 80C31 MSM80C31 80C31-1 80C3151 PCB80C31BH-2/SC80C31BCC PCB80C31BH-3/SC80C31BCG 87C51FA siemens 80c32 P80C32 80C51 SAB80C31 Microcontroller Cross-Reference 80C31BH-1 80C31BH-2 80C51BH 80C51BH-1	PDF
H7442 Abstract: Matra-Harris Semiconductor Contextual Info: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL	OCR Scan		PDF
tfc 718 Abstract: 29C48 29C53 Contextual Info: hatra 5868455 design MATRA semicond th D E S I G N SEMICOND m J satfiHSS q o o d v s ? m J ~ 94D 00727 D - H U M S llllH llll /VIAim-HARRIS SEMICONDUCTOR 29C48 FEATURE CONTROL COMBO J ANUARY 1987 1ÂTBOIM Features • EXTERNAL AND USER PROGRAMM ABLE TRANSMIT AND RECEIVE GAIN	OCR Scan	5flbfi45S 29C48 tfc 718 29C53	PDF
RS flip flop IC Contextual Info: \\M \W MA Series 2.5 MICRON SILICON-GATE CMOS GATE ARRAYS /MATRA-HARRIS SEMICONDUCTOR JULY 1986 2.5/x/1 METAL LAYER HIGH SPEED CMOS GATE ARRAYS UP TO 25 MHz INTERNAL OPERATING FREQUENCY Features Description The M A 0 2 5 0 -M A 0 4 0 0 -M A 0 8 0 0 -M A 1200 Gate	OCR Scan	10nA/GATE RS flip flop IC	PDF
D-8057 Contextual Info: HM 65770 i l /MATRA.- HARRIS SEMICONDUCTOR M 4K x 4 CMOS STATIC RAM O .W lC a ' o PFSELOSlfllMMW MAY 1986 005625 r 6 i r Features Description The HM 65770 is a 16384 bit static Random Access Memory organized as 4096 words by 4 bits using CMOS technology and operates from the single 5V supply.	OCR Scan	x697317 D-8057 Twx524126 86-05-HM 65770/B352	PDF
MA31750 processor architecture Abstract: 00E-12 mmu ericsson 29C516E ANM052 80C32 80C32E MA31750 65656E 80C32 Harris Semiconductor Contextual Info: ANM052 MATRA MHS Radiation Tolerant SRAM for SPACE Applications Introduction The purpose of this document is to analyse the selection criteria for memory chips to be used in Spacecraft computers. A general trend is to implement more autonomous functions in Spacecraft, making use of increased	Original	ANM052 HRX/93 HM-65656E 00E-06 00E-07 00E-08 00E-09 00E-10 00E-11 00E-12 MA31750 processor architecture 00E-12 mmu ericsson 29C516E ANM052 80C32 80C32E MA31750 65656E 80C32 Harris Semiconductor	PDF