MATCHING MOSFET Search Results
MATCHING MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCK423G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK422G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK424G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK401G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
| TCK420G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
MATCHING MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
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an-30tc44244422 mosfetmosfet 4420+8 | |
siliconix ld120
Abstract: zener diode 20v 0.5w sanyo 6TPE220MI LTC3731 LTC3731H LTC3731HG "ic works" IRF7821W 042V Nippon capacitors
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ltc3731h600khz225khz680khz+15 | |
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Contextual Info: FEATURES GE PACKAGE ! Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE MODE Class AB |
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hvv1012-2 | |
LTC3731G
Abstract: Nippon capacitors
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ltc3731600khz250khz770khz+4 | |
AD5242
Abstract: jedec MS-012-AC 2N7002 AD5241 FDV301N OP279 OP42 EVAL-AD5242EBZ AD52421M
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256-positionad5241/ad5242ad524116-lead+8 | |
transistor f 948
Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233
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uf28150jtransistor f 948transistor 936j78 transistor+5 | |
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Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges |
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an84506-oct-14 | |
LTC3731
Abstract: LTC3731CG LTC3731CUH LTC3731IG LTC3731IUH LTC3731G
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ltc3731600khzssop-365a/40a+7 | |
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Contextual Info: LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ Internal input matching |
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let9120m | |
M252
Abstract: 865 RF transistor LET9120M
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let9120mm252865 rf transistor | |
PO102Contextual Info: 10V Drive Nch MOSFET RLD2BPNK2 A long-run product with market-driven high reliability. Matching to various needs. This is the laser diode for high-speed print corresponding laser printers. zDimensions Unit : mm Equivalent circuit diagram φ2.0±0.2 90°±0.2° |
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cw10mwpo102 | |
NTMF4834NS
Abstract: sensefet CAT2300 marking f3t NTMFS4833NST1G CAT2300VP2-GT3 marking code E2 logic gate vk marking 6 pin ic
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cat2300ntmfs4833nst1gntmfs4854nst1gcat2300/d+6 | |
Matching MOSFET Drivers to MOSFETs
Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
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an799r4-7200d-85737nl-5152+10 | |
sensefet
Abstract: CAT2300
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cat2300ntmfs4833nst1gntmfs4854nst1gcat2300/d+1 | |
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M252
Abstract: SD57120 XSD57120
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sd57120m252xsd57120 | |
MRFE6VP8600H
Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
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mrfe6vp8600hmrfe6vp8600hr6mrfe6vp8600hr5mrfe6vp8600hsr6+10 | |
M252
Abstract: SD56120M
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sd56120msd5120mm252 | |
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Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING |
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sd57120xsd57120 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices |
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mrfe6vp8600hmrfe6vp8600hr6mrfe6vp8600hr5mrfe6vp8600hsr6+1 | |
200B
Abstract: 20AWG 700B M252 SD57120
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sd57120tsd57120200b20awg+2 | |
20AWG
Abstract: M252 SD57120 XSD57120 C22j SC13460
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sd57120xsd5712030milsc14920+5 | |
C3225X7R2A225KT
Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
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mrfe6vp8600hmrfe6vp8600hr6mrfe6vp8600hr5mrfe6vp8600hsr6+11 | |
595D
Abstract: AN19 FDS6688 LTC3731 LTC3731CG LTC3731CUH T510
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ltc3731600khz250khz12-phase+11 | |
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Contextual Info: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated |
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