MATCHING CODE 6L Search Results

JMC5501

Abstract: SD1480 vk200 M111
Contextual Info: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING POUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480

sd1480

Abstract: JMC5501 arco 402 datasheet vk200 M111 600lW
Contextual Info: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P OUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480

BLV33F

Abstract: matching code 6L tv transmitter amplifier circuit ASI10493
Contextual Info: BLV33F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: PACKAGE STYLE .500 6L FLG • Gold Metalization • Internal Input Matching • Omnigold Metalization System

ASI10580

Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG = 10 dB at 6.0 W/960 MHz

uml70 application circuit

Abstract: ASI10697 UML70
Contextual Info: UML70 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML70 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • • Omnigold Metalization System 2x ØN FULL R D B E .725/18,42 F G MAXIMUM RATINGS 8.0 A IC

ASI10667

Abstract: UHBM45
Contextual Info: UHBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBM45 is Designed for FM Land Mobile Applications up to 836 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 5.0 dB at 45 W/836 MHz • Omnigold Metalization System

ULBM35

Abstract: ASI10684
Contextual Info: ULBM35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM35 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Internal Input matching Network • PG = 6.0 dB at 35 W/470 MHz

VHB80-12

Abstract: 865 RF transistor RF POWER TRANSISTOR NPN transistor D 982 ASI10718 k20a
Contextual Info: VHB80-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB80-12 is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.0 dB at 80 W/175 MHz • Omnigold Metalization System

Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold Metalization System

ULBM15

Contextual Info: ULBM15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM15 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.5 dB at 15 W/470 MHz • Omnigold Metalization System

CBSL15

Abstract: ASI10581
Contextual Info: CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG =8.0 dB at 15 W/960 MHz

UHBS30-2

Abstract: 1250H TRANSISTOR T 927 ASI10671
Contextual Info: UHBS30-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.0 dB at 30 W/960 MHz • Omnigold Metalization System

UML70

Abstract: uml70 application circuit ASI10697
Contextual Info: UML70 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML70 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 8.5 dB at 70 W/400 MHz

UHBS30-1

Abstract: ASI10670
Contextual Info: UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for Class C, FM Base Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG = 7.5 dB at 30 W/900 MHz

UHBS60-1

Abstract: ASI10672 IC K 902
Contextual Info: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.5 dB at 60 W/900 MHz • Omnigold Metalization System

UML25F

Abstract: ASI10695
Contextual Info: UML25F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML25F is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 9.0 dB at 25 W/400 MHz

UHBS15-2

Abstract: ASI10669
Contextual Info: UHBS15-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 9.0 dB at 15 W/960 MHz • Omnigold Metalization System

UML100

Abstract: ASI10698
Contextual Info: UML100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML100 is Designed for High Power Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • PG = 7.5 dB Typical at 400 MHz • Internal Input Matching Network

UHBS15-1

Abstract: ASI10668
Contextual Info: UHBS15-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 9.5 dB at 15 W/ 900 MHz • Omnigold Metalization System

ASI10683

Abstract: ULBM25 470 6L
Contextual Info: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 25 W/470 MHz • Omnigold Metalization System

Contextual Info: CC2538 www.ti.com SWRS096A – DECEMBER 2012 – REVISED APRIL 2013 A Powerful System-On-Chip for 2.4-GHz IEEE 802.15.4, 6LoWPAN and ZigBee Applications Check for Samples: CC2538 FEATURES 1 • 23 • • • Microcontroller – Powerful ARM Cortex M3 With Code

SOT323-3L

Contextual Info: STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF AV 10 mA VRRM 15 V Tj (max) 150 °C VF (max) 0.51 V • ■ ■ ■ ■ SOT323-6L STDD15-xxS SOT323-3L STDD15-xxW FEATURES AND BENEFITS Low diode capacitance Device designed for RF application

ASI10685

Abstract: ULBM45 U 318 m
Contextual Info: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold Metalization System

Contextual Info: CC2538 www.ti.com SWRS096A – DECEMBER 2012 – REVISED APRIL 2013 A Powerful System-On-Chip for 2.4-GHz IEEE 802.15.4, 6LoWPAN and ZigBee Applications Check for Samples: CC2538 FEATURES 1 • 23 • • • Microcontroller – Powerful ARM Cortex M3 With Code