MATCH Search Results

POUT315

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

TIS69

Abstract: TIS70 tis70 texas instruments
Contextual Info: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

D425G

Abstract: ACT21 SN74BCT2166
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S LTR E1 DESCRIPTION DATE DWN ADD - 1 3 THRU - 17, MATCH PRODUCTION DRWING REV’S 6 /F E B /0 7

5964-16L

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.9 G H z to 6.4 G H z

Contextual Info: S N 74AC T215 7 2K x 16 C A C H E A D D R E S S C O M PA R A TO R /D A TA RAM D3326, JANUARY 1990-REVlSED JUNE 1990 Fast A ddress to Match Delay . . . 20 ns Max FN PACKAGE TOP VIEW Totem -Pole and Open-Drain Match Outputs On-Chip Address/D ata Com parator

Contextual Info: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

D2911

Abstract: bit-slice
Contextual Info: TMS2150A 512 x 8 CACHE ADDRESS COMPARATOR D2911, M A RCH 1 982-R E V IS E D SEP TE M B E R 1990 DW, JD, OR NT PACKAGE TOP VIEW ’ACT2150A is Recommended for New Designs RESET[ 1 U Fast Address to Match Valid Delay - Two Speed Ranges: 35 ns and 45 ns 512

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r

AX2022

Abstract: TACT2150 D6142
Contextual Info: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package

PD4A

Contextual Info: _ bq3285 UIMITRODE- Real-Time Clock RTC Features >• Direct clock/calendar replace­ ment for IBM AT-compatible computers and other applications >- Functionally compatible with the DS1285 ~ Closely matches MC146818A pin configuration >• 114 bytes of general nonvolatile

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

SCAD002

Abstract: BCT2164
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs _ D3513, JUNE 1990 — REVISED A U G U S T 1990 • Fast Address to MATCH Delay . . .12-ns Max • ’BCT2163 has Totem-Pole Match Output

50920-1

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package