MARKINGS 2N7002 Search Results

Contextual Info: SPICE Device Model 2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

2N7002E-T1-E3

Abstract: 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 3 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF

marking 2N7002E-T1-E3

Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

diodes code va

Abstract: VA MARKING
Contextual Info: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

2N7002E-T1-E3

Abstract: marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E"
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

2N7002KQ-13

Abstract: 2N7002KQ-7
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package

DS30120 Rev. 13

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

k72 diode

Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

2N7002K-T1-E3

Abstract: 2N7002K-T1 2N7002K 2N7002K-T1-GE3
Contextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002TQ-13-F

Contextual Info: 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

2N7002E

Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002-13-F

Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

2N7002A-7

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002Q

Abstract: equivalent of 2N7002 2N7002-13-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

MARKING C7K

Abstract: 2N7002KQ-13 2N7002K-7
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

marking 7k sot-23 package

Abstract: 2N7002K-T1-E3
Contextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)

marking 7E SOT-23 Diode

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: DLD101EV1 USER GUIDE Description The board is intended for the evaluation of Jumpers 1, 2 and 3 on the evaluation board DLD101, a linear mode constant current LED set the value of the LED current. Jumper 1 sets the LED current to 260mA, jumper 2 driver. sets it to 45mA and jumper 3 sets it to 20mA.

Contextual Info: ZXLD1371EV5 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXLD1371EV5, Figure 1, is an evaluation board for the ZXLD1371EV5 LED driver chip. The board is in a Buck-Boost configuration with an input voltage range of 5.4-30 VDC and will drive a string of up to 5 LEDs. It is set for an output current of 680mA and offers convenient connections for

0R27

Contextual Info: ZXLD1371EV3 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXLD1371EV3, Figure 1, is an evaluation board for the ZXLD1371 LED driver chip. The board is in a Boost configuration with an input voltage of 12 VDC and will drive a string of 12 LEDs. It is set for