MARKINGS 2N7002 Search Results
MARKINGS 2N7002 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKINGS 2N7002 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2N7002KContextual Info: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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2n7002k18-jul-08 | |
2N7002EContextual Info: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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2n7002e18-jul-08 | |
2N7002EWContextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage |
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2n7002eo-236ot-2318-jul-08+1 | |
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Contextual Info: SPICE Device Model 2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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2n7002k2002/95/ec2011/65/eujs709a+1 | |
2N7002E-T1-E3
Abstract: 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3
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2n7002eo-236ot-232n7002e-t1-e3+3 | |
marking 2N7002E-T1-E3
Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
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2n7002e2002/95/eco-236ot-23+5 | |
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Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2n7002vc/vacaec-q101ot563j-std-020+2 | |
diodes code va
Abstract: VA MARKING
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2n7002vc/vac2n7002v/vaaec-q101ot-563+4 | |
2N7002KContextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Low On-Resistance: 2 Ω Pb-free • Low Threshold: 2 V (typ.) Available • Low Input Capacitance: 25 pF RoHS* • Fast Switching Speed: 25 ns |
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2n7002ko-236ot-2318-jul-08 | |
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Contextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF |
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2n7002ko-236ot-232n7002k-t1+3 | |
2N7002E
Abstract: 2N7002E-7-F
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2n7002eot-23j-std-020mil-std-202+2 | |
2N7002E-T1-E3
Abstract: marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E"
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2n7002e2002/95/eco-236ot-23+6 | |
2N7002KQ-7
Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
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2n7002kaec-q101ot-23j-std-020+8 | |
k72 transistor
Abstract: k72 transistor surface mount 2N7002DW 2N7002DW-7-F
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2n7002dwaec-q101ot-363j-std-020+5 | |
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2N7002KQ-13
Abstract: 2N7002KQ-7
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2n7002kaec-q101j-std-020mil-std-202+3 | |
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Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package |
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2n7002aaec-q101ot-23j-std-020d+2 | |
2N7002K-T1-E3
Abstract: 2N7002K-T1-GE3 2N7002K-T1 2N7002K-T1 Vishay 2n7002k 7k 2N7002K
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2n7002ko-236ot-232002/95/ec+7 | |
DS30120 Rev. 13Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2n7002dwaec-q101ot363j-std-020+3 | |
sot-23 Marking k7k
Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
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2n7002kaec-q101ot-23j-std-020+6 | |
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Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2n7002vc/vacaec-q101ot563j-std-020+1 | |
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Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features Mechanical Data • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package |
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2n7002vc/vacaec-q101ot563j-std-020+1 | |
k72 diode
Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
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2n7002dwaec-q101ds30120k72 diode+3 | |
k72 transistor sot 23Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 2 |
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2n7002aec-q101ot-23j-std-020+3 | |
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Contextual Info: 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2n7002t115maaec-q101ds30301 | |