MARKING Z.1 DIODE Search Results
MARKING Z.1 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
MARKING Z.1 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR |
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LBAS20HT1G 3000/Tape LBAS20HT3G 10000/Tape | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking |
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LBA277T1 | |
BAS16VContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors SOT-563 BAS16V SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 Marking: KAM Maximum Ratings @TA=25℃ |
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OT-563 OT-563 BAS16V 150mA BAS16V | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 Marking: MMBD4148T: KA2, BAS16T:A2 |
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OT-523 MMBD4148T/BAS16T OT-523 MMBD4148T: BAS16T 150mA | |
MARKING D3A
Abstract: Sot-23 MARKING d3a RB400D
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OT-23 RB400D MARKING D3A Sot-23 MARKING d3a RB400D | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 DAP222 SWITCHING DIODE FEATURES: z z z High speed Suitable for high packing density layout High reliability 1 3 2 MARKING: P Maximum Ratings @Ta=25 ℃ Parameter |
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OT-523 OT-523 DAP222 100mA | |
RB751S-40
Abstract: SOD523
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OD-523 RB751S-40 OD-523 RB751S-40 SOD523 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS21T SWITCHING DIODE FEATURES z z z Fast Switching Speed For General Purpose Switching Applications High Conductance 1 3 2 MARKING :T3 Maximum Ratings @Ta=25℃ |
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OT-523 OT-523 BAS21T 100mA 200mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB400D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 1 MARKING: D3A 3 2 Maximum Ratings @Ta=25℃ |
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OT-23 RB400D OT-23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148 SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance 1 3 2 MARKING: KA2 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ |
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OT-23 MMBD4148 OT-23 | |
MMBD4448VContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors MMBD4448V SOT-563 SWITCHING DIODE FEATURES z Fast switching speed z High conductance 1 MARKING: KAL Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage |
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OT-563 MMBD4448V OT-563 100mA 150mA MMBD4448V | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes DA221 SOT-523 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits 1 3 2 MARKING: K Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter |
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OT-523 DA221 OT-523 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV199 SOT-23 SWITCHING DIODE FEATURES z This Switching Diode has The Following Features: z Low Leakage Current Applications 1 3 Marking: JY 2 Maximum Ratings @Ta=25℃ Parameter |
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OT-23 BAV199 OT-23 150mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-343 Plastic-Encapsulate Diodes SOT-343 RB480K SCHOTTLKY BARRIER DIODE 1 4 FEATURES z Low current rectification z High reliability 2 3 MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
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OT-343 RB480K 100mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes DA204U SWITCHING DIODE SOT-323 FEATURES z Bias circuits z Protection circuits 1 3 MARKING: K 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage |
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OT-323 DA204U OT-323 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes DAN217 SWITCHING DIODE SOT-23 FEATURES z Small surface mounting type z Two diode elements are connected in series 1 MARKING: BA1 3 2 Maximum Ratings @Ta=25 ℃ Parameter Symbol |
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OT-23 DAN217 OT-23 | |
D2E diode
Abstract: diode d2e RB491D Schottky Diode Marking sot-23 NA MARKING
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OT-23 RB491D D2E diode diode d2e RB491D Schottky Diode Marking sot-23 NA MARKING | |
BAS40VContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors SOT-563 BAS40V SCHOTTKY DIODE FEATURES z Low Forward Voltage Drop z Fast Switching 1 Marking: KAN Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit 40 V Non-Repetitive Peak reverse voltage |
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OT-563 OT-563 BAS40V BAS40V | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS116 SOT-23 SWITCHING DIODE FEATURES z Low leakage current applications z Medium speed switching times MARKING: JV 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage |
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OT-23 BAS116 OT-23 150mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Diodes SOT-563 BAS40V SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Fast Switching Marking: KAN 6 5 4 1 2 3 Maximum Ratings @Ta=25℃ Parameter Symbol Non-Repetitive Peak Reverse Voltage |
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OT-563 OT-563 BAS40V | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage LBAS20HT1G Switching Diode 1 z We declare that the material of product compliance with RoHS requirements. 2 SOD– 323 1 CATHODE Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR |
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LBAS20HT1G 3000/Tape LBAS20HT3G 10000/Tape | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1 |
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OT-23 CJ2301 OT-23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3 |
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OT-23 CJ2303 OT-23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel 30-V D-S MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S4 |
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OT-23 CJ2304 OT-23 | |