MARKING YI Search Results

KRC828E

Contextual Info: SEMICONDUCTOR KRC828E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 YI 1 2 Item Marking Description Device Mark YI KRC828E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC828U

Contextual Info: SEMICONDUCTOR KRC828U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 YI 1 2 Item Marking Description Device Mark YI KRC828U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: Chip Marking Identification System Marking Proposed EIA Standard: Two Position Marking:* Alpha: 1st position significant figures of capacitance in pF Numerical: 2nd position decimal multiplier of capacitance NOTE: ¥ 0402, 0504, 0508, 0603, 0612, 0907 available unmarked only

MARKING OF CHIP RESISTOR

Abstract: Resistor 511 Ohm color code SMD resistors 121 smd code marking rac 10k resistor network SIP 10K SIP Resistor E192 paste resistor thick film SMD resistors codes smd marking 619
Contextual Info: Chip Resistors Stackpole Electronics, Inc. Part Marking Instructions Resistive Product Solutions Part Marking Instructions – Chip Resistors 5% Marking The nominal resistance is marked on the surface of the overcoating with the use of 3 digit markings. 0201 and 0402 are not marked.

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

J335

Abstract: marking MI C314
Contextual Info: ^External Dimensions unit: mm Fig. 2 Fig. 1 Fig. 3 Fig. 4 fO .5 7'°< I Cathode marking n ~ t w i to o 1.35*0A j 2.0mm j + Cathode marking Cathode marking c i 1.35 »°4 5.1*2? Fig. 5 Fig. 7 Fig. 6 Cathode marking J / mi o—x - j - r t — O o— W -J-W — O

marking s11

Contextual Info: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of

2012U

Abstract: marking s11
Contextual Info: Multilayer Chip Balun CHM2012U-F 積層チップバラン Series TYPE CHM2012U-F Series 2.0±0.15 3 2 0.3±0.15 1 MARKING 1.0Max. 1.25±0.15 4 5 SIDE VIEW TOP VIEW ③ ④ 0.65 0.35 6 NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper surface of the

marking s11

Contextual Info: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of

transistor marking 3em

Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

germanium photodiode PIN

Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Contextual Info: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V

HAMAMATSU L9491

Contextual Info: ADVANCED ELECTROSTATIC REMOVER "Particle Free" "Ozone Free" "No Air Flow" Compact & Power supply compatible in world-wide & CE marking compliance Introducing a electrostatic charge removal using "PHOTOIONIZATION"!! L12645 ADVANCED ELECTROSTATIC REMOVER

HAMAMATSU L9491

Contextual Info: ADVANCED ELECTROSTATIC REMOVER "Particle Free" "Ozone Free" "No Air Flow" Compact & Power supply compatible in world-wide & CE marking compliance ACTUAL SIZE Introducing a electrostatic charge removal using "PHOTOIONIZATION"!! ADVANCED ELECTROSTATIC REMOVER

C9991

Abstract: HAMAMATSU L9491 x-ray Ionization chamber x-ray c9991 C9492 L9490 aloka L9491 x-ray tube operation ionizer
Contextual Info: ADVANCED ELECTROSTATIC REMOVER "Particle Free" "Ozone Free" "No Air Flow" Compact & Power supply compatible in world-wide & CE marking compliance ACTUAL SIZE Introducing a electrostatic charge removal using "PHOTOIONIZATION"!! ADVANCED ELECTROSTATIC REMOVER

Contextual Info: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V

smd MARKING CODE G72

Contextual Info: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information Device LSBTH10T1G Marking Shipping LSBTH10T1G H8A 3000/Tape&Reel LSBTH10T3G H8A 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

marking RD 38 TI

Abstract: TMT-50 dong guan 48
Contextual Info: TURNS RATIO: MECHANICAL DIMENSIONS: inch PRI:SEC ± 5% 1.255 ELECTRICAL CHARACTERISTICS:at 25 C MARKING: YY:YEAR WW:WEEK Transmit / Receive 1CT:2/1CT:1 @100kHz,50mV Inductance(Line Side): 1.2mH Min @100kHz,50mV Interwinding Capacitance: 35pF & 35pF Max @100kHz,50mV

Ta2O5 phase diagram

Abstract: EIA-535 Ta2O5
Contextual Info: TBJ Series Including CWR11 and COTS-Plus The TBJ Series encompasses five case sizes, A through E, corresponding to EIA535BAAC, the commercial industry standard. This series also offers molded body/compliant termination construction, polarity and capacitance marking. The