MARKING Y1 RQA0002 Search Results

RQA0002DNS

Abstract: marking Y1 rqa0002 RQA0002 RQA0002DNSTB-E WSON0504-2
Contextual Info: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0200 Rev.2.00 Aug 03, 2006 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)

RQA0002

Abstract: marking us capacitor pf l1 RQA0002DNS RQA0002DNSTB-E marking Y1 rqa0002 WSON0504-2
Contextual Info: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0100 Rev .1.00 Sep 26, 2005 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)

RQA0002DNS

Abstract: RQA0002DNSTB-E PG1020 RQA0002
Contextual Info: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.3.01 Nov 21, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)

Contextual Info: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0300 Rev.3.00 Oct 20, 2006 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)