MARKING X5T Search Results

capacitor poliester 100nf

Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Contextual Info: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications

Y5P 1NF

Abstract: n220 N4700 N2200 560pF n150 transistor 15nf marking 222 N1500 N330
Contextual Info: Disc Ceramic Capacitors Marking DIG. 2 Logo: Only in diam. ≥ 6mm O TC / Class General Purpose A = NP0 / I *B = P100 / I *C = N150 / I *D = N220 / I *E = N330 / I *F = N470 / I G = N750 / I H = N1500 / I *I = N2200 / I *J = N4700 / I K = SL M = Y5E / II N = Y5F / II

Multilayer Capacitor 0.1 uF 50V

Abstract: D55X5 D47X5T2A104 D33X D55X5T1H104 D67X D33X5T1H103 D33X5T1H marking X5T
Contextual Info: General-Purpose Leaded Type X5T Temperature Characteristics Features • High dielectric constant that enables compact capacitors • Close-grained ceramic and superior film quality that ensure high reliability and superior humidity resistance • Good temperature characteristics, bias voltage

X5T953

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -100V IC = -5A Continuous Collector Current Low Saturation Voltage -90mV max @-1A

X5T851

Abstract: ZX5T951G marking X5T
Contextual Info: A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V IC = 6A high Continuous Collector Current ICM = 20A Peak Pulse Current

X5T951

Contextual Info: A Product Line of Diodes Incorporated ZX5T951G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -60V IC = -5.5A High Continuous Collector Current ICM = -15A Peak Pulse Current

U103M29Y5

Abstract: u503m2 UK50-104
Contextual Info: SERIES U r ~ - i Ultra-Kap, 3VDC through 100VDC, Low Voltage El A Class IV Ceramic Capacitors DESCRIPTION: Ph ilips Components Ultra-Kap capacitors provide many advantages when compared to ordinary ceramic capacitors. Their unique semi-conductor

Contextual Info: A Product Line of Diodes Incorporated Green ZX5T953G 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -5A high Continuous Collector Current ICM = -10A Peak Pulse Current

X5T955

Contextual Info: A Product Line of Diodes Incorporated ZX5T955G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current

T309K

Abstract: T101K99U2JT850S 850S-50Z 853A T500K philips catalog components T200K99U2JT854A marking X5T T500K99COGW8570 857-25Z
Contextual Info: Ceramic Capacitors Series T 5KVDC through 20KVDC RF Rated, Transmitting, Special Applications Ceramic Capacitors Description Philips Components RF Rated, ceramic transmitting capacitors are designed primarily for use in applications where very high RF currents, high KVA ratings and high working

Contextual Info: rjtlrLowlnductance, ^ ^ Ifiig h C a p a c ita n c e SPDH Series SPECIFICATIONS High RF Current Disc Capacitors Capacitance Value pF — 10,000 20,000 50,000 Capacitance Tolerance — @ 2 5 °C ±20% ±20% GMV or + 8 0 - 20% Rated DC voltage — 25 KVDC 25 KVDC

marking z5e capacitor

Contextual Info: TUSONIX 1.0 1.1 1.2 1.3 GENERAL SPECIFICATIONS MECHANICAL Case: Conformal coated. Lead Material: Copper clad steel. Terminal Strength: Mil-Std-202, Method 211, Condition A radial . 2 lbs. TUSONIX style 8121 and smaller. 5 lbs. TUSONIX style 8131 and larger.

X7T voltage dependence

Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

ZX5T853G

Abstract: ZX5T853GTA ZX5T853GTC
Contextual Info: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

ZX5T953GTA

Abstract: ZX5T953G ZX5T953GTC x5t953
Contextual Info: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC

X5T955

Contextual Info: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATOIN TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in

X5T955

Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Contextual Info: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in

X5T951

Contextual Info: ZX5T951A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC

X5T851

Abstract: ZX5T851A ZX5T851ASTOA ZX5T851ASTZ
Contextual Info: ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

Contextual Info: OBSOLETE ALTERNATIVE IS ZXTN2005G ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in

sot223 device Marking

Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
Contextual Info: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in

X5T951

Abstract: ZX5T951G ZX5T951GTA ZX5T951GTC Bv 42 transistor ZX5T951GT
Contextual Info: ZX5T951G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in

X5T849

Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Contextual Info: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in