MARKING WT9 Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Contextual Info: WT9435M DRAIN SOURCE VOLTAGE 6 5 D 4 G -5.3 AMPERES D 7 3 S D S 2 Features: DRAIN CURRENT 8 S 1 P b Lead Pb -Free D Surface Mount P-Channel Enhancement Mode MOSFET -30 VOLTAGE * Super high dense * Cell design for low RDS(ON) * RDS(ON)<55mΩ@VGS = -10V * RDS(ON)<90mΩ@VGS = -4.5V

WT9435

Abstract: STM9435 WT9435M
Contextual Info: WT9435M Surface Mount P-Channel Enhancement Mode MOSFET 8 7 D S 2 DRAIN CURRENT -4.8 AMPERS D S 1 P b Lead Pb -Free 6 D 3 S 5 D 4 G DRAIN SOUCE VOLTAGE -30 VOLTAGE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <55 mΩ @VGS =-10V R DS(ON) <85 m Ω@VGS =-4.5V

Contextual Info: M I CR ON T E C H N O L O G Y INC 3 flE D G 0 0 2 3 QS 1 B M R N .-ftt'ir REPLACES: WT9C$G24 1 MEG X 8 DRAM FAST PAGE M O D E FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon gate process

EFD34

Abstract: DS161R Motor Control Center wiring diagram abb TFK catalog EX-88 WESTINGHOUSE motor life line westinghouse mcp breaker TFK 543 TC236
Contextual Info: Industrial Control & Circuit Breakers Section C Innovative, intelligent NEC and IEC solutions safely and efficiently control power and protect circuits in explosive, wet, and corrosive environments worldwide. New Products in the Control Product Line Section

acp ca14

Abstract: CA14V15 MCA14 catalogue of torque switch ACP ROTARY SWITCH ca14v acp ca9
Contextual Info: COM COM CA6 // COM CA9 // COM CA14 COM MCA9 // COM MCA14 Rotary Switches 66 | www.acptechnologies.com | COM COM CA6 // COM CA9 // COM CA14 COM MCA9 // COM MCA14 ACP’s Rotary switches are based on the design of the potentiometers: plastic housing with protection type IP 5 dustproof . They have one input and two possible outputs. The conmuting angle between outputs can be customized.

TRANSISTOR bHrt

Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE

ca6vsmd

Abstract: CA6V CA9MH CA14PH2 CA9V10 HA5 marking code At ACP we have a dream ca6 smd transistor lm 38dt thumbwheel Potentiometers
Contextual Info: The world we have is the result of our way of thinking Albert Einstein | www.acptechnologies.com | 01 02 | www.acptechnologies.com | Nobody would have heard of David and Goliath’s story if the giant had won. Often, minimum is maximum. Although our imagination

UAA 190

Abstract: transistor 9a2a STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET VDSS TYPE STT3PF20V • ■ ■ ■ !ÃW RDS on ID 1Ã!ÃWÃ5#$W !!Ã6 1Ã!$ÃWÃ5!&W TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE

STK 6024

Abstract: CA9MH acp ca14 ca6 smd transistor SMD CA6 220 k ohm potentiometer ca14nh acp ca14/ce14 Potentiometer SMD CA6xv5
Contextual Info: Potentiometers CA6 CA9 // CE9 CA14 // CE14 MCA9 // MCE9 MCA14 // MCE14 | www.acptechnologies.com | 13 CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD

Contextual Info: Potentiometers CA6 CA9 // CE9 CA14 // CE14 MCA9 // MCE9 MCA14 // MCE14 | www.acptechnologies.com | 13 CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD

3055VL

Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA
Contextual Info: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

SI9955DY

Abstract: fairchild NDS 1182
Contextual Info: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

fairchild NDS

Abstract: marking w66
Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

9959

Contextual Info: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4410DY

Contextual Info: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

9959

Contextual Info: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4936DY

Abstract: fairchild NDS 9959
Contextual Info: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si9955DY

Contextual Info: Si9955DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Top side marking AHQ

Abstract: Si4953DY
Contextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

Contextual Info: Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching