MARKING WT6 Search Results

RD10

Abstract: WT6401
Contextual Info: WT6401 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT -4.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE -12 VOLTAGE 1 GATE 2 SOURCE Features: *Super High Dense Cell Design For Low RDS ON RDS(ON)<50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *Fast Switching

Contextual Info: WT6401 P-Channel Enhancement Mode Power MOSFET * “G” Lead Pb -Free DRAIN CURRENT -4.3 AMPERS 3 DRAIN DRAIN SOUCE VOLTAGE -12 VOLTAGE 1 GATE 2 SOURCE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON)<50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement

STM6920A

Abstract: WT6920AM
Contextual Info: WT6920AM DRAIN SOURCE VOLTAGE 6 5 D2 4 G2 5 AMPERES D2 7 3 S2 D1 G1 2 Features: DRAIN CURRENT 8 S1 1 P b Lead Pb -Free D1 Surface Mount N-Channel Enhancement Mode MOSFET 40 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)<35mΩ@VGS = 10V RDS(ON)<62mΩ@VGS = 4.5V

transistor WT6

Abstract: WT6 SOT23 MARKING transistor WT6 45 WT6 transistor
Contextual Info: Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V BR DSS 20 Rds(on) Id (Max. mŸ) (A) 45 @ 4.5V 3.6 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology

Contextual Info: Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V BR DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS

UL 467 tables for grounding

Abstract: WT41 CF 02 94Vo 6 awg thhn wire for grounding UL 486C THHN WIRE 900 kcmil W-S-610 THHN 6 str green 303171 LA 89512
Contextual Info: 10/28/08 11:07 AM Page 1 A Wire Termination Section A pg 02-21 Section A pg 02-21 10/24/08 1:59 PM Page 2 Wire-Nut Wire Connectors • Five color-coded models cover a full range of wire sizes from 22 - 8 AWG ■ No pre-twisting required — positive grip

ca6vsmd

Abstract: CA6V CA9MH CA14PH2 CA9V10 HA5 marking code At ACP we have a dream ca6 smd transistor lm 38dt thumbwheel Potentiometers
Contextual Info: The world we have is the result of our way of thinking Albert Einstein | www.acptechnologies.com | 01 02 | www.acptechnologies.com | Nobody would have heard of David and Goliath’s story if the giant had won. Often, minimum is maximum. Although our imagination

CA6xv5

Abstract: ca6vsmd CA6 V potentiometer smd potentiometers thumbwheel Potentiometers SMD CA6 CA6VS5 CA6XV5-10K thumbwheel potentiometer ACP potentiometers
Contextual Info: CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD terminal configuration. The substrate in our SMD potentiometers is

STK 6024

Abstract: CA9MH acp ca14 ca6 smd transistor SMD CA6 220 k ohm potentiometer ca14nh acp ca14/ce14 Potentiometer SMD CA6xv5
Contextual Info: Potentiometers CA6 CA9 // CE9 CA14 // CE14 MCA9 // MCE9 MCA14 // MCE14 | www.acptechnologies.com | 13 CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD

Contextual Info: Potentiometers CA6 CA9 // CE9 CA14 // CE14 MCA9 // MCE9 MCA14 // MCE14 | www.acptechnologies.com | 13 CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD

SMD CA6

Abstract: SMD diode Ca6 ca6 smd transistor thumbwheel Potentiometers ca6 smd code smd potentiometers transistor smd marking BA ca6vsmd transistor smd bc rn smd code marking NE
Contextual Info: CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD terminal configuration. The substrate in our SMD potentiometers is

WT6C

Contextual Info: HKRON TECHNOLOGY INC 5SE D b l l l S H I 0D03332 b'iS • MRN ' T T4 k -2 3 -0 5 MT5C1601 16K X 1 SRAM v u c z n o N SRAM 16K X 1 SRAM PIN ASSIGNMENT (Top View • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process

CA6V

Abstract: ca6vsmd SMD diode Ca6 CA6VS thumbwheel Potentiometers CA6V5 SMD CA6 ca6 smd transistor ca6 smd ca6 smd code
Contextual Info: CA6 Carbon Potentiometers CA 14 | www.acptechnologies.com | CA6 6mm carbon potentiometers with plastic housing and protection type IP 5 dust-proof . CA6 potentiometers are available both in through-hole and in SMD terminal configuration. The substrate in our SMD potentiometers is

5-PIN MARKING PAX

Abstract: ISO7816-3 marking wt6 transistor WT4 U435 MOROCCO WT21 001C BAT42 HE10 ISO7816
Contextual Info: ST7SCR 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER • ■ ■ ■ ■ Memories – Up to 16K of ROM or High Density Flash HDFlash program memory with read/write protection, HDFlash In-Circuit and In-Application Programming. 100 write/erase cycles guaranteed, data retention: 20 years at 55°C

marking wt9

Abstract: WT7 MARKING iso7816 sim marking wt3 WT11 RS transistor WT6 QFN24 Package tray transistor WT4 bldc sensorless 12v brushless motor driver 4 pol electronic watchdog application using NE555 IC
Contextual Info: ST7SCR 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER • ■ ■ ■ ■ Memories – Up to 16K of ROM or High Density Flash HDFlash program memory with read/write protection, HDFlash In-Circuit and In-Application Programming. 100 write/erase cycles guaranteed, data retention: 40 years at 55°C

Contextual Info: ST7SCR 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER • ■ ■ ■ ■ Memories – Up to 16K of ROM or High Density Flash HDFlash program memory with read/write protection, HDFlash In-Circuit and In-Application Programming. 100 write/erase cycles guaranteed, data retention: 20 years at 55°C

84 jrc regulator

Abstract: 7FSCR1 7FSCR1R4 7fscr1e4m1 7fscr1e4 level shifter 5V to 3.3V IEC7816-3 A52101 marking wt6 WT7 MARKING
Contextual Info: ST7SCR 8-BIT LOW-POWER, FULL-SPEED USB MCU WITH 16K FLASH, 768 RAM, SMARTCARD I/F, TIMER • ■ ■ ■ ■ Memories – Up to 16K of ROM or High Density Flash HDFlash program memory with read/write protection, HDFlash In-Circuit and In-Application Programming. 100 write/erase cycles guaranteed, data retention: 40 years at 55°C

Contextual Info: ST7SCR1E4, ST7SCR1R4 8-bit low-power, full-speed USB MCU with 16-Kbyte Flash, 768-byte RAM, smartcard interface and timer Datasheet − production data Features Memories • Up to 16 Kbytes of ROM or High Density Flash HDFlash program memory with read/write

MAX 8951

Contextual Info: ST7SCR1E4, ST7SCR1R4 8-bit low-power, full-speed USB MCU with 16-Kbyte Flash, 768-byte RAM, smartcard interface and timer Datasheet − production data Features Memories • ■ Up to 16 Kbytes of ROM or High Density Flash HDFlash program memory with read/write

Contextual Info: ADVANCE MT58LC64K32/36G1 64K X 32/36 SYNCBURST SRAM MICRON I 11CHNOLOr.Y INC SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SU PPLY, +2.5V I/O, P IPELIN ED , BU R ST C O U N TE R AN D S IN G LE -C Y C LE D E S E LE C T FEATURES • • • • • • • • •

Contextual Info: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS80F713Q/L HMS80P713Q/L HMS80C713Q/L HMS80F743Q/L HMS80P743Q/L HMS80C743Q/L HMS80F733K/HMS80P733K/HMS80C733K User’s Manual Ver. 1.00 REVISION HISTORY VERSION 1.00 (MAR. 2005) First Edition

7408 CMOS

Abstract: IC 7408 and function 7408+IC 7408 chip 7408 ic diagram
Contextual Info: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC80F7108/7308/7408 MC80P7108/7308/7408 MC80C7108/7308/7408 User’s Manual Ver. 0.2 REVISION HISTORY VERSION 0.2 (MAR. 2005) This book Version 0.2 Published by MCU Application Team 2005 MagnaChip Semiconductor Ltd. All rights reserved.

PIC16 example hi tech lcd ay0438

Abstract: PIC16 code hi tech SPI marking 3FW rg4bh plcc socket 44 PLCC tht PIR CONTROLLER LP 0001 BO 570 3FW 59 Zener diode marking hsK PIC16 example hi tech lcd
Contextual Info: P IC 1 6 C 9 X X M ic r o c h ip $ 8-Bit CMOS Microcontroller with LCD Driver Available in Die form Devices included in this data sheet: • PIC16C923 • PIC16C924 Microcontroller Core Features: • High performance RISC CPU • Only 35 single word instructions to learn

MC81F8616

Abstract: MC81F8816 MC81F8616L MC81F8616Q MC81F8816Q SP 8616 icom sc 1025 MC81C8616L bbc timer stt 11 PPR 1042
Contextual Info: ABOV SEMICONDUCTOR Co. Ltd. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC81F8816/8616 User’s Manual Ver. 1.01 Version 1.01 Published by FAE Team 2008 ABOV Semiconductor Co., Ltd. All rights reserved. Additional information of this manual may be served by ABOV Semiconductor offices in Korea or Distributors.