MARKING WB2 Search Results

Contextual Info: c*L4RoHSC€ WB2 Series FEATURES: • High Ratings with UL and TUV Approvals • Industry Standard 22mm x 30mm Cutout • Internal Dust and Water Protection to IP55 R R ating: Maintained 20A, 125/250VAC T65/T85 [CURus] 2.0HP, 125/250VAC [oURus] 18 12 A, 250VAC 5E4 T85 [TUV]

5E4 T85

Abstract: 5E4T85 T85 "Rocker Switches" marking 2P 125VAC-T85 marking wb2 20A marking
Contextual Info: WB2 Series High Amperage Water Protection Heavy Duty Front Panel Mount FEATURES: SPECIFICATIONS: RATING: MAINTAINED SWITCHES: 20A 125VAC [cULus] 20A 250VAC [cULus] 2HP 125/250VAC [cULus] 22 14 A 250V~ 5E4 T85 [European] MOMENTARY SWITCHES: 20A 125VAC T85 [cULus]

T85 5e4 Switch

Abstract: 5E4 T85
Contextual Info: WB2-Series High Amperage Water Protection Heavy Duty Front Panel Mount The WB2-Series is a cutting edge water-resistant rocker switch. Utilizing innovative, flexible internal seals that do not affect the feel or action, this switch does NOT require a PVC cap to achieve

nitto SWT 10

Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

MRF9030NR1

Abstract: marking z17 100B470JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

marking WB1 sot-23

Abstract: marking WB2 sot-23 transistor WB1
Contextual Info: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source

WB201209

Abstract: WB160808 WB160808B300 WB1005 WB160808B100 WB160808B221 WB160808B102 WB3216 WB201209F800QLT04 WB321611B310QLT60
Contextual Info: Walsin Technology Corporation Lead Free Ferrite Beads Series Customer : Approval No : 013SZ-940145 Issue Date : 2005/05/18 Customer Approval : WALSIN Technology Corp. Authorized By : Chen-yuan Su Page 1 of 19 Lead Free Ferrite Beads version 04 March 2004 Walsin Technology Corporation

marking WB1 sot-23

Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

marking WB1 sot-23

Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source

Contextual Info: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over copper.

Contextual Info: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over phos

Contextual Info: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over phos

Contextual Info: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−

Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

Contextual Info: Document 116-1 Wideband RF Transformers •฀ Surface mount and through hole versions •฀ 500 V interwinding isolation, 1/4 Watt RF input power •฀ 250 mA max current rating. •฀ For a smaller package size, see our TTWB Series Core material Ferrite

MRF9045N

Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MRF377HR3

Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

VIPer 32

Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

marking WB1 sot-23

Abstract: marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2
Contextual Info: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−

marking WB1 sot-23

Abstract: WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23
Contextual Info: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−

Contextual Info: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device