MARKING W96 Search Results
MARKING W96 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING W96 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BFP196TWContextual Info: BFP196T/BFP196TR/BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Features For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power |
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bfp196t/bfp196tr/bfp196twbfp196tbfp196tr1363t+2 | |
MARKING w96Contextual Info: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications For low noise, low distortion broadband amplifiers in |
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bfp196tbfp196trbfp196twot-143+3 | |
Magnetic Field Sensor FLC 100
Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
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magnetic field sensor flc 100cl02a400tmc1a310atg85 wafer+6 | |
Photodiode, 1550nm, butterfly package
Abstract: W9804 1550nm Laser Diode with butterfly pin package w7124 w3425 1550nm Laser Diode butterfly w9041 oki LOT NUMBER marking laser DFB 1550nm 20mW 10gb W3268
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jog-00952ol5104l-20-wnnnn1550nm/20mw1550nm+12 | |
w9041
Abstract: laser DFB 1550nm 20mW 10gb W9634 W6550 1550nm Laser Diode butterfly W8369 w405 W8957 1602.31 W4135
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ol5104l-20-wnnnnodlol5104l-20-wnnnn-021550nm/20mw1550nm+12 | |
BFP196TW
Abstract: BFP196T BFP196TR
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bfp196tbfp196trbfp196twot-143+2 | |
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Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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bfp196tbfp196trbfp196tw2002/95/ec+4 | |
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Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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bfp196tbfp196trbfp196tw2002/95/ec+4 | |
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Contextual Info: BFP196T / BFP196TR / BFP196TW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • SOT-143 Low noise figure High transition frequency fT = 7.5 GHz e3 Excellent large signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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bfp196tbfp196trbfp196tw2002/95/ec+4 | |
BFP196T
Abstract: BFP196TR BFP196TW
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bfp196tbfp196trbfp196twot-143+5 | |
OL5104L-20-Wnnnn
Abstract: W9804 W6550 W8704 W3268 W862 1550nm Laser Diode butterfly Photodiode, 1550nm, butterfly package W3819 w803
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jog-00952ol5104l-20-wnnnn1550nm/20mw1550nm+12 | |
A42 B331
Abstract: 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591
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tf300-5a42 b33196182 eatoneaton 96182+7 | |
MS25237
Abstract: MS16712-1 W101PB6R b9001b D201W3 w403p6 MS27903 B9021BB m22885 W9001
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m8805/55-0018870k2m8805/55-0028870k3+15 | |
D239 TRANSISTOR
Abstract: transistor d358 d331 TRANSISTOR equivalent transistor d332 D333 transistor transistor d336 D417 transistor D331 transistor d427 transistor equivalent w58 transistor
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bu97530kvt-m89segx5comd239 transistortransistor d358+8 | |
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MS25224-1
Abstract: MS25224 ms27752-1 MS25224-3 8201K6 MS25224-2 MS25223-2 Eaton cateye MS25221-1 NS-2B
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ms25224-1ms25224ms27752-1ms25224-3+6 | |
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Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO |
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s71ws-j16-bit | |
4a2g
Abstract: L8212 S71WS-J
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s71ws-j16-bit4a2gl8212 | |
MT58LC64K
Abstract: 36B3
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OCR Scan |
mt58lc64k32/36b3100-leadmt58lc64k36b3 | |
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Contextual Info: Agilent Technologies N5244/45AS Option H85 User’s and Service Guide Microwave PNA-X Series High Power Configurable Test Set PNA Series Network Analyzer On-line Help System Application Note 1408-10 Manufacturing Part Number: N5245-90002 Printed in USA: January 2014 |
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n5244/45asn5245-90002 | |
marking code SM CMContextual Info: PRELIM IN ARY MT28F004B1 512K x 8 FLASH M EM ORY |V |IC = R O N FLASH MEMORY 512K x 8 FEATURES PIN A SSIG N M EN T Top View • Seven erase blocks: 16KB boot block (protected) Tw o 8KB param eter blocks Four m ain m emory blocks • Deep Pow er-Down Mode: 8(iA at 5V V cc; 8|iA at |
OCR Scan |
mt28f004b1100ns110ns150ns+3 | |
MT28F200B1
Abstract: MT28F200B1SG
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OCR Scan |
mt28f200b144-pind015/a-116-bit+1 | |
Micron Quantum DevicesContextual Info: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY M IC R O N I QkMMVUMMHBMlM G> FLASH MEMORY 512K x 16, 1 MEG x 8 S mart V oltage , FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16K B /8K -w ord b o o t block (protected) T w o 8K B /4K -w ord p ara m e te r blocks |
OCR Scan |
mt28f800b1100ns110ns150ns+4 | |
A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
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OCR Scan |
1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+7 | |
SL8MM
Abstract: SL8A4 intel 360 celeron m processor, 360 sl86k Intel Celeron Processor sl9wt 0695h sl9wt 252046 September 2005 300303-04 06F6h INTEL I7 prefetch MSR
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sl8mmsl8a4intel 360 celeron m processor, 360 sl86kintel celeron processor sl9wt+6 | |