MARKING VAO Search Results

TK83854D

Contextual Info: SPECIFICATION TABLE OF CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Purpose TOKO Part Number Function Applications Structure Package Outline Absolute Maximum Ratings Electrical Characteristics Test Circuit Pin Assignm ent Block Diagram Package Outline Dim ensions / Marking

marking p3

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA - - G r e e n f A 4 - — v-V L i n e M MBF2202PT1 Low rDS on Sm all-Signal VAOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy-con­ serving traits.

LNA marking CODE R0

Contextual Info: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

AOVR

Abstract: STG3696E JESD22 QFN10 Date Code Marking STMicroelectronics
Contextual Info: STG3696E Low voltage dual SPDT switch for USB/audio signal switching with 8 kV ESD protection Features • Low distortion negative signal swing capability for audio switch range = VCC to VCC – 5.0 V ■ Single supply operating voltage: VCC = 2.7 V to 4.5 V

Contextual Info: STG3696E Low voltage dual SPDT switch for USB/audio signal switching with 8 kV ESD protection Features • Low distortion negative signal swing capability for audio switch range = VCC to VCC – 5.0 V ■ Single supply operating voltage: VCC = 2.7 V to 4.5 V

AOVR

Abstract: QFN10 STG3696E JESD22
Contextual Info: STG3696E Low voltage dual SPDT switch for USB/audio signal switching with 8 kV ESD protection Features • Low distortion negative signal swing capability for audio switch range = VCC to VCC – 5.0 V ■ Single supply operating voltage: VCC = 2.7 V to 4.5 V

BGA725L6

Abstract: gps trimble glonass gps TSLP-6 lna 2.5 GHZ s parameter ads design
Contextual Info: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG

smd marking list infineon

Contextual Info: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 2.0, 2011-09-16 Preliminary RF & Protection Devices Edition 2011-09-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved.

Contextual Info: BGA725L6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS in ultra small package with 0.77mm² footprint Data Sheet Revision 2.0, 2012-03-09 Preliminary RF & Protection Devices Edition 2012-03-09 Published by Infineon Technologies AG

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

BGA915

Contextual Info: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

FR4 Prepreg

Abstract: data sheet germanium diode smd prepreg 1650M AN091 infineon MARKING BS INFINEON BGA615L7 smd marking s22 BGA615 infineon marking BS
Contextual Info: D a t a S he et , R e v . 1 . 3 , F e b . 2 00 7 B G A 6 15 L7 Silicon Germanium GPS Low Noise Amplifier S m a l l S i g n a l D i s c r et e s Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007.

BGA615L7

Abstract: BGA615 1650M data sheet germanium diode smd FR4 Prepreg GERMANIUM prepreg LNA marking CODE R0 LNA marking R0 FR4 Prepreg for RF PCB
Contextual Info: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

P181 Photocoupler

Abstract: P181 TOSHIBA TLP181 TOSHIBA P181 toshiba tlp181 p181 gr p181 MARKING P181 TLP181 equivalent tlp181 datasheet
Contextual Info: TLP181 V4 TOSHIBA Photocoupler TLP181(V4) Attachment: Specifications for VDE0884 option Types: TLP181 Type designations for ‘ option: (V4) ’, which are tested under VDE0884 requirements. Ex. : TLP181 (V4-GR-TPR) V4: VDE0884 option GR: CTR rank name TPR: standard taping name

Contextual Info: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Contextual Info: BGA924N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

Contextual Info: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier in ultra small package with 0.77mm² footprint Data Sheet Revision 3.0, 2012-01-13 RF & Protection Devices Edition 2012-01-13 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

Contextual Info: BGA824N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2013-06-24 RF & Protection Devices Edition 2013-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

Contextual Info: BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 3.0, 2014-01-24 RF & Protection Devices Edition 2014-01-24 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG

Contextual Info: BGA7H1N6 Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1 Min/Max , 2014-02-11 RF & Protection Devices Edition 2014-02-11 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved.

BGA925L6

Abstract: 925L BGA925
Contextual Info: BGA925L6 Silicon Germanium GNSS Low Noise Amplifier in ultra small package with 0.77mm² footprint Data Sheet Revision 3.0, 2012-01-13 RF & Protection Devices Edition 2012-01-13 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG