MARKING V79 Search Results

jedec package MO-269

Abstract: MT41J128M SSTE32882 micron ddr3 2133 MT18JDF25672PDZ-1G4
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) Options Marking • Operating temperature

PE903-15E

Contextual Info: PRN256M8V79BG8GQF-15E DDR3 SDRAM PRN256M8V79BG8GQF-15E PRN 256M8 – 32 Meg x 8 x 8 Banks Features •                  Vdd = VddQ = 1.5V +0.075V 1.5V center-terminated push / pull I/O Differential bidirectional data strobe

Contextual Info: PRN256M8V79DG8GQF-125E DDR3 SDRAM PRN256M8V79DG8GQF-125E PRN 256M8 – 32 Meg x 8 x 8 Banks Features •                  Vdd = VddQ = 1.5V +0.075V 1.5V center-terminated push / pull I/O Differential bidirectional data strobe

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: LM V791 ,LM V 792 LMV791/LMV792 17 MHz, Low Noise, CMOS Input, 1.8V Operational Amplifiers with Shutdown T ex a s In s t r u m e n t s Literature Number: SNOSAG6E Semiconductor LMV791/LMV792 17 MHz, Low Noise, CMOS Input, 1.8V Operational Amplifiers with Shutdown

TDA8752AH8BA

Abstract: CG5 marking TDA8752AH/PCF0700P/032
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8752A Triple high-speed Analog-to-Digital Converter ADC Product specification Supersedes data of 1998 Dec 14 File under Integrated Circuits, IC02 1999 Feb 24 Philips Semiconductors Product specification Triple high-speed Analog-to-Digital

Contextual Info: Tel : Fax : email : 0044 0 118 979 1238 0044 (0)118 979 1283 info@actcrystals.com ACT9SVH-6, ACT8SVH-6, ACT7SVH-4 HCMOS VCXO The ACT SVH series are 4 and 6-pad miniature SMD Voltage Controlled Crystal Oscillator (VCXO) housed in 7 x 5, 5x3.2 & 3.2x2.5 mm ceramic packages with a metal lid. All are ideal for high

74LVC1G79

Abstract: 74LVC1G79GF 74LVC1G79GM 74LVC1G79GV 74LVC1G79GW
Contextual Info: 74LVC1G79 Single D-type flip-flop; positive-edge trigger Rev. 8 — 30 September 2010 Product data sheet 1. General description The 74LVC1G79 provides a single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q-output on the LOW-to-HIGH transition

Contextual Info: 74LVC1G79 Single D-type flip-flop; positive-edge trigger Rev. 9 — 2 December 2011 Product data sheet 1. General description The 74LVC1G79 provides a single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q-output on the LOW-to-HIGH transition

Contextual Info: 74LVC1G79 Single D-type flip-flop; positive-edge trigger Rev. 11 — 2 July 2012 Product data sheet 1. General description The 74LVC1G79 provides a single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q-output on the LOW-to-HIGH transition

Contextual Info: 74LVC1G79 Single D-type flip-flop; positive-edge trigger Rev. 10 — 2 April 2012 Product data sheet 1. General description The 74LVC1G79 provides a single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q-output on the LOW-to-HIGH transition

29-August

Abstract: 74LVC1G79GW 74LVC1G79 74LVC1G79GF 74LVC1G79GM 74LVC1G79GV JESD22-A114E MO-203 NXP 74LVC1G79GW
Contextual Info: 74LVC1G79 Single D-type flip-flop; positive-edge trigger Rev. 07 — 29 August 2007 Product data sheet 1. General description The 74LVC1G79 provides a single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q-output on the LOW-to-HIGH transition

marking v79

Contextual Info: 74LVC1G79 Single D-type flip-flop; positive edge trigger Rev. 06 — 9 October 2006 Product data sheet 1. General description The 74LVC1G79 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

Contextual Info: 2GB 4GB X64, SR, DR : 204-Pin DDR3 SDRAM SODIMM SDRAM DDR3 256M, 512M X 64 SODIMM 204-Pin 4GB SODIMM Assembly Features: •               DDR3 functionality and operations supported as defined in the component data sheet

Contextual Info: 2GB, 4GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 256M, 512M X 64 UDIMM Features: •              DDR3 functionality and operations supported as per component data sheet ROHS Complaint 240 pin unbuffered dual in-line memory module

transistor marking M04 GHZ

Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package

Contextual Info: 2GB, 4GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 256M, 512M X 64 UDIMM PIN ASSIGNMENT 240-Pin UDIMM Features: •              DDR3 functionality and operations supported as per component data sheet ROHS Complaint

transistor marking v79 ghz

Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package

SNW-SZ-602

Abstract: cmos camera U318 sot794 cMOS Camera Module processor CMOS IR camera a476 marking y319 SNW-SQ-002
Contextual Info: OM6802 VGA CMOS camera module Rev. 2.1, June 4 2003 Preliminary Datasheet 1. General description The OM6802 is a highly integrated compact CMOS color camera module with embedded Camera Signal Processor CSP that supports up to VGA resolution formats in a small package including a focused optical system. It uses Philips

NE3508M04-T2-A

Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package

NEC Ga FET marking L

Abstract: NE3508M04-T2B-A nec microwave NE3508M04-A NE3508M04-T2-A HS350 NE3508M04 NE3508M04-T2
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package

NE3508M04

Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Contextual Info: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )

NE3508M04-T2-A

Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid