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    MARKING V1J Search Results

    MARKING V1J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    MARKING V1J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    V1J diode

    Abstract: DIODE V1J marking code Diodes v1j MARKING CODE V1J V1j marking code V1J SMA DIODE V1J 95029 MARKING SMA V1J diode Diode marking code v1j
    Contextual Info: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Lead Pb -free (“PbF” suffix)


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    10mq100npbf18-jul-08v1j diodediode v1j marking code+8diodes v1jmarking code v1jv1j marking codev1j smadiode v1j95029 markingsma v1j diodediode marking code v1j PDF

    V1J diode

    Abstract: DIODE V1J marking code DIODE V1J V1j marking code MARKING CODE V1J Diodes v1j Diode marking code v1j SMA V1J 94119
    Contextual Info: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Compliant to RoHS directive 2002/95/EC


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    10mq100npbf2002/95/ec18-jul-08v1j diode+8diode v1j marking codediode v1jv1j marking codemarking code v1jdiodes v1jdiode marking code v1jsma v1j94119 PDF

    V1J diode

    Abstract: DIODE V1J MARKING V1J V1j marking code DIODE V1J marking code 10MQ100NPBF v1J Datasheet 95029 10MQ100 95029 MARKING
    Contextual Info: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term


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    10mq100npbf18-jul-08v1j diodediode v1j+7marking v1jv1j marking codediode v1j marking codev1j datasheet9502910mq10095029 marking PDF

    V1J diode

    Abstract: V1j marking code DIODE V1J marking code VS-10MQ100NPBF Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N
    Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10mq100npbfj-std-0202002/95/ec18-jul-08+9v1j diodev1j marking codediode v1j marking codediodes v1jvs10mq100npbfdiode v1jdiode marking code v1jv1j smavs-10mq100n PDF

    V1J diode

    Abstract: DIODE V1J marking code DIODE V1J Diode marking code v1j V1J DO-214AA Diodes v1j 95029 MARKING V1j marking code MARKING CODE V1J v1j RECTIFIER
    Contextual Info: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMB • Compliant to RoHS directive 2002/95/EC


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    10bq100pbf2002/95/ec18-jul-08v1j diode+9diode v1j marking codediode v1jdiode marking code v1jv1j do-214aadiodes v1j95029 markingv1j marking codemarking code v1jv1j rectifier PDF

    V1J diode

    Abstract: DIODE V1J 10bq100pbf DO-214AA, SMB v1J Datasheet V1j marking code DIODE V1J marking code
    Contextual Info: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term


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    10bq100pbf18-jul-08v1j diodediode v1j+4do-214aa, smbv1j datasheetv1j marking codediode v1j marking code PDF

    DIODE V1J marking code

    Abstract: V1J diode 10bq100pbf V1j marking code Diode marking code v1j VS-10BQ100
    Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10bq100pbfj-std-0202002/95/ec18-jul-08+6diode v1j marking codev1j diode10bq100pbfv1j marking codediode marking code v1jvs-10bq100 PDF

    diode SMA marking code PB

    Abstract: V1J diode 94119
    Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10mq100npbfj-std-0202002/95/ec11-mar-11+3diode sma marking code pbv1j diode94119 PDF

    V1J diode

    Abstract: DIODE V1J marking code V1J DO-214AA
    Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10bq100pbfj-std-0202002/95/ec11-mar-11+3v1j diodediode v1j marking codev1j do-214aa PDF

    V1j marking code

    Abstract: V1J diode
    Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10mq100npbfj-std-0202002/95/ec11-mar-11+2v1j marking codev1j diode PDF

    DIODE V1J marking code

    Abstract: Diodes v1j DIODE V1J V1J diode V1J DO-214AA
    Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10bq100pbfj-std-0202002/95/ec11-mar-11+5diode v1j marking codediodes v1jdiode v1jv1j diodev1j do-214aa PDF

    vs-10bq100

    Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
    Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10bq100pbfj-std-0202002/95/ec2011/65/eu+712-mar-12vs-10bq100diode v1j marking codev1j marking codev1j diode95034vs10bq100 PDF

    Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10mq100npbfj-std-0202002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    DIODE V1J marking code

    Abstract: VS-10MQ100N VS-10MQ100 vs-10mq V1j marking code Diodes v1j SMA V1J diode VS10m VS-10MQ100NPbF
    Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of


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    vs-10mq100npbfj-std-0202002/95/ec2011/65/eu+912-mar-12diode v1j marking codevs-10mq100nvs-10mq100vs-10mqv1j marking codediodes v1jsma v1j diodevs10m PDF

    Contextual Info: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode • High frequency operation Anode • Guard ring for enhanced ruggedness and long term


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    vs-10mq100npbfj-std-0202002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    94119

    Contextual Info: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA


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    vs-10mq100npbfj-std-0202002/95/ec2011/65/eu+3js709a02-oct-1294119 PDF

    10BQ100PbF

    Contextual Info: VS-10BQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


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    vs-10bq100pbfj-std-0202002/95/ec2011/65/eu+3js709a02-oct-1210bq100pbf PDF

    Contextual Info: TO SHIBA 2SK2824 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2SK2824 Unit in mm HIGH SPEED SWITCH APPLICATIONS am ai n r ; < ;w iT rH appi irA T in w « ; E- High Input Impedance 1,5V Gate Drive Low Gate Threshold Voltage : Vth = 0.5~1.0V


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    2sk2824sc-70 PDF

    Contextual Info: TO SHIBA 2SK2823 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2SK2823 Unit in mm + 0.5 2.5-0.3 + 0.25 HIGH SPEED SWITCH APPLICATIONS a m a i n r ; < ;w iT rH a p p i irA T in w « ; i .b—0.1 & T • • • • High Input Impedance


    OCR Scan
    2sk2823o-236modsc-59--258c PDF

    cti dro

    Contextual Info: TOSHIBA 2SK2825 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 5 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • • • • High Input Impedance 1,5V Gate Drive Low Gate Threshold Voltage Small Package


    OCR Scan
    2sk2825cti dro PDF

    Contextual Info: TOSHIBA 2SK2823 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 3 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • High Input Impedance • 1,5V Gate Drive • Low Gate Threshold Voltage • Small Package


    OCR Scan
    2sk2823 PDF

    Contextual Info: TOSHIBA 2SK2824 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 4 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • High Input Impedance • 1,5V Gate Drive • Low Gate Threshold Voltage • Small Package


    OCR Scan
    2sk2824 PDF

    ib7a

    Contextual Info: This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1 1 Scope This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD:8837 "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".


    OCR Scan
    5962-e266mil-bul-103ib7a PDF

    VI-B63-05

    Abstract: VI-J6Z-01 VI-B01-03
    Contextual Info: File E135493 March 20, 1991 REPORT on COMPONENT - POWER SUPPLIES, INFORMATION TECHNOLOGY EQUIPMENT INCLUDING ELECTRICAL BUSINESS EQUIPMENT Vicor Corp. Andover, MA Copyright 1991 Underwriters Laboratories Inc. Underwriters Laboratories Inc. authorizes the above-named company to reproduce


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    e135493vi-j60-cxvi-b63-05vi-j6z-01+1vi-b01-03 PDF