MARKING TC DIODE Search Results

Contextual Info: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5

b2t52c43

Abstract: marking s47 B2T52-C43 BZT52C12 B2T52-C7v5
Contextual Info: Surface M ount Zeners m 410mW Zener Diodes/SOD123_ Type Number Marking Code Zener Voltage Range* _N N Izj @ Zzi VR !zm O hm s mA O hm s mA %/°C V o lts mA 1 -0.065 -0.060 -0.055 = 5m A @ •st N TC Vz Volts @ Izt * Min Reverse Maximum Typical Temperature

Contextual Info: n ix Y S Advanced Technical Data Fast Recovery Epitaxial Diode FRED DSEI6 I vr RRM t v RSM V V RRM V Type 640 600 DSEI 6-06AS 6A 600 V 35 ns FAVM rr TO-252AA marking on product Anode Symbol 6I060AS Test Conditions ^FRM TVJ Tc = 125°C; rectangular, d = 0.5

Contextual Info: DSS 2-60AT2 IFAV = 2 A VRRM = 60 V VF = 0.75 V Schottky Diode VRSM V VRRM V Type Marking on product 60 60 DSS 2-60AT2 D2-60A 60 60 DSS 2-60AT2AP Symbol A C TO-92 Package D2-60A Conditions Maximum Ratings IFRMS IFAV TC = 85°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

Contextual Info: DSS 2-60AT2 IFAV = 2 A VRRM = 60 V VF = 0.75 V Schottky Diode VRSM V VRRM V Type Marking on product 60 60 DSS 2-60AT2 D2-60A 60 60 DSS 2-60AT2AP Symbol A C TO-92 Package D2-60A Conditions Maximum Ratings IFRMS IFAV TC = 85°C; rectangular, d = 0.5 IFSM TVJ = 45°C; t p = 10 ms 50 Hz , sine

6Y045AS

Abstract: diode 328
Contextual Info: DSS 6-0045AS IFAV = 6 A VRRM = 45 V VF = 0.5 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type marking A C TO-252 AA on product DSS 6-0045AS A 6Y045AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 165°C; rectangular, d = 0.5

6-0025BS

Contextual Info: DSS 6-0025BS IFAV = 6 A VRRM = 25 V V F = 0.3 V Power Schottky Rectifier VRSM VRRM V V 25 25 Type marking A C TO-252 AA on product DSS 6-0025BS A 6Y025BS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 140°C; rectangular, d = 0.5

Contextual Info: DSS 6-015AS IFAV = 6 A VRRM = 150 V V F = 0.62 V Power Schottky Rectifier VRSM VRRM V V 150 150 Type marking A TO-252 AA C on product DSS 6-015AS A 6Y150AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 160°C; rectangular, d = 0.5

6y150

Abstract: 6Y150AS 6015AS DIODE F10 6Y150AS IXYS
Contextual Info: DSS 6-015AS IFAV = 6A VRRM = 150 V V F = 0.62 V Power Schottky Rectifier VRSM VRRM V V 150 150 Type marking A TO-252 AA C on product DSS 6-015AS A 6Y150AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 160°C; rectangular, d = 0.5

Contextual Info: VUI 30-12 N1 Rectifier Module for Three Phase Power Factor Correction Typ. Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~ fT = 15 kHz TC = 80°C Preliminary data Part name Marking on product VUI30-12N1 2 D3 D1 10 9 5 5 1 2 T 6 6 9 10 D2 D4 1 Features:

6Y150AS

Abstract: 6y150
Contextual Info: DSS 6-015AS IFAV = 6 A VRRM = 150 V V F = 0.62 V Power Schottky Rectifier VRSM VRRM V V 150 150 Type marking A TO-252 AA C on product DSS 6-015AS A 6Y150AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 160°C; rectangular, d = 0.5

6Y045AS

Contextual Info: DSS 6-0045AS IFAV = 6 A VRRM = 45 V VF = 0.53 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type marking C A TO-252 AA on product DSS 6-0045AS A 6Y045AS A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 160°C; rectangular, d = 0.5

Contextual Info: DSS 6-0045AS IFAV = 6 A VRRM = 45 V VF = 0.5 V Power Schottky Rectifier VRSM VRRM V V 45 45 Type marking A C TO-252 AA A on product DSS 6-0045AS A 6Y045AS C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAV TC = 165°C; rectangular, d = 0.5

HSMS-285x model

Abstract: HSMS-285X marking code e6 sot363 AN1124 HSMS-2850 SOT143 Marking A1 PIN DIODE MARKING CODE AB SOT Packaged A1 4 PIN sot-23 Marking B1 HSMS-286* reliability
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Demonstration Circuit Boards > DEMO-HSMS285-0 DEMO-HSMS285-0 Demonstration circuit board for HSMS-2850, HSMS-2852 and HSMS-2855 Description Lifecycle status: Active Features 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode

surface mount limiter diodes

Abstract: marking 34 sot-363 rf HSMS-286F HSMS-286K HSMS-286P 286E HSMS-286B date code A DIODE MARKING CODE T4 marking code tc sot 363 MARKING T2 SOT323
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286P HSMS-286P High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

DIODE MARKING CODE A1

Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

marking 34 sot-363 rf

Abstract: HSMS-286x Series Detector Schottky Diodes at 915MHZ sot-23 MARKING CODE ZZ AVAGO DATE CODE MARKING sot 23 marking code T2 SOT 363 marking CODE T4 T4 marking sot-323 286E HSMS-2865
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2865 HSMS-2865 High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large

diode 8a 600v

Contextual Info: FFP08D60L2 Features 8A, 600V, Deuxpeed Diode • Duexpeed Recovery, Trr = 25 ns @ IF = 8 A The Deuxpeed™ is a high-performance diode composed of two 300V dice in series and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

B4045

Contextual Info: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

F60UA60DN

Abstract: FFAF60UA60DN welding rectifier circuit
Contextual Info: FFAF60UA60DN tm 60A, 600V, Ultrafast Dual Diode Features The FFAF60UA60DN is ultrafast rectifier with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping rectifiers in a variety of switching power supplies and other power switching applications. It is

Y3010DN

Abstract: rectifier diode reference voltage list fairchild top marking y3010 Fairchild marking change diode FYA3010DN application FULL WAVE RECTIFIER FYA3010
Contextual Info: FYA3010DN Schottky Barrier Rectifier Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1. Anode 2.Cathode 3. Anode

Contextual Info: FFH60UP40S, FFH60UP40S3 Features 60 A, 400 V, UItrafast Diode • Ultrafast Recovery, Trr = 85 ns @ IF = 60 A • Max Forward Voltage, VF = 1.3 V (@ TC = 25°C) The FFH60UP40S, FFH60UP40S3 is an ultrafast diode with low forward voltage drop and rugged UIS capability. This

FFH60UP40S3

Abstract: diode 60a 400v FFH60UP40S
Contextual Info: FFH60UP40S, FFH60UP40S3 Features 60A, 400V, UItrafast Diode • Ultrafast Recovery, Trr = 85 ns @ IF = 60 A • Max Forward Voltage, VF = 1.3 V (@ TC = 25°C) The FFH60UP40S is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use

Contextual Info: FFA40UP35S tm 40 A, 350 V Ultrafast Diode Features • Ultrafast recovery, trr < 55 ns @ IF = 40 A The FFA40UP35S is an utrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping Diodes in a variety of switching