MARKING STMICROELECTRONICS TO 247 Search Results

stth60p03sw

Contextual Info: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain

stth60p03sw

Abstract: IRM-A20 STTH60P03 STTH60P03S STTH60
Contextual Info: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain

STTH60P03SW

Abstract: STTH60P03 STTH60P03S
Contextual Info: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain

STTH6004W

Contextual Info: STTH6004W Ultrafast high voltage rectifier Table 1: Main product characteristics IF AV 60 A VRRM 400 V Tj (max) 175 °C VF (typ) 0.83 V trr (max) 50 ns A K DO-247 STTH6004W Features and benefits • ■ ■ ■ Ultrafast switching Low reverse current Low thermal resistance

STTH60L06

Abstract: STTH60L06W
Contextual Info: STTH60L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 60 A VRRM 600 V Tj 175°C VF (typ) 0.95 V trr (max) 70 ns A K DO-247 STTH60L06W FEATURES AND BENEFITS • ■ ■ ■ Ultrafast switching Low reverse current

Contextual Info: STTH60L06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 60 A VRRM 600 V Tj 175°C VF (typ) 0.95 V trr (max) 70 ns A K DO-247 STTH60L06W FEATURES AND BENEFITS • ■ ■ ■ Ultrafast switching Low reverse current

STTH6004W

Abstract: JESD97 DO-247
Contextual Info: STTH6004W Ultrafast high voltage rectifier Table 1: Main product characteristics IF AV 60 A VRRM 400 V Tj (max) 175 °C VF (typ) 0.83 V trr (max) 50 ns A K DO-247 STTH6004W Features and benefits • ■ ■ ■ Ultrafast switching Low reverse current Low thermal resistance

TIP35CW

Abstract: TIP36C to-247 TIP36CW Marking STMicroelectronics TO 247 TIP35C transistor JESD97 TIP35C TIP36C TIP35 ecopack
Contextual Info: TIP35CW TIP36CW Complementary Silicon High Power Transistors Features • STMicroelectronics PREFERRED SALESTYPES Description The device is a silicon Epitaxial-Base NPN transistor mounted in TO-247 plastic package. It is intentend for use in power amplifier and

STTH30R06D

Abstract: STTH30R06P STTH30R06PI STTH30R06 STTH30R06W
Contextual Info: STTH30R06 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV 30 A VRRM 600 V Tj 175°C VF (typ) 1.10 V trr (max) 50 ns • ■ ■ A K TO-220AC STTH30R06D FEATURES AND BENEFITS ■ A K DO-247 STTH30R06W Ultrafast switching

Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω

schematic welding inverters

Contextual Info: STGW40NC60V N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH IGBT TYPE STGW40NC60V • ■ ■ ■ ■ ■ VCES VCE sat (Max)@25°C IC(#) @100°C 600 V < 2.5 V 50 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

GW40NC60V

Abstract: schematic diagram welding inverter IGBT STGW40NC60V schematic welding inverters STGW40NC60V
Contextual Info: STGW40NC60V N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH IGBT TYPE STGW40NC60V • ■ ■ ■ ■ ■ VCES VCE sat (Max)@25°C IC @100°C 600 V < 2.5 V 50 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

GW40NC60V

Abstract: IGBT STGW40NC60V schematic welding inverters Welding topologies
Contextual Info: STGW40NC60V N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH IGBT TYPE STGW40NC60V • ■ ■ ■ ■ ■ VCES VCE sat (Max)@25°C IC(#) @100°C 600 V < 2.5 V 50 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

W4N150

Abstract: P4N150 STP4N150
Contextual Info: STP4N150 STW4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STP4N150 STW4N150 • ■ ■ ■ ■ VDSS RDS on ID Pw 1500 V 1500 V <7Ω <7Ω 4A 4A 160 W

MAX247

Abstract: STPS80L15CY 5g30
Contextual Info: STPS80L15CY  LOW DROP OR-ing POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A1 K MAX 247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

GW20NC60

Contextual Info: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Hyper Fast PowerMESH IGBT TARGET DATA TYPE STGW20NC60VD • ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC (#) @100°C 600 V < 2.5 V 30 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

W38NB20

Abstract: STW38NB20 JANUARY1998
Contextual Info: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.052 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY

gw20nc60v

Abstract: GP20NC60V gp20nc60 GW20NC60 STGW20NC60V IGBT welding circuit welding smps schematic
Contextual Info: STGP20NC60V - STGW20NC60V N-CHANNEL 30A - 600V TO-220/TO-247 Hyper Fast PowerMESH IGBT TARGET DATA VCES VCE sat (Max)@25°C IC (#) @100°C STGP20NC60V 600 V < 2.5 V 30 A STGW20NC60V 600 V < 2.5 V 30 A TYPE • ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT

STW30NM60D

Abstract: W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh Power MOSFET ADVANCED DATA TYPE STW30NM60D VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

Contextual Info: STW34NB20 N-CHANNEL 200V - 0.062  - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STW34NB20 200 V < 0.075  34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062  ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED

MAX247

Abstract: STPS80L15CY
Contextual Info: STPS80L15CY  LOW DROP OR-ing POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K MAX 247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

w4n150

Abstract: P4N150 Marking STMicroelectronics TO 247 STP4N150 STW4N150 N-channel MOSFET to-247 Marking STMicroelectronics to220
Contextual Info: STP4N150 STW4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP4N150 STW4N150 • ■ ■ ■ ■ VDSS RDS on ID Pw 1500 V 1500 V <7Ω <7Ω 4A 4A 160 W 160 W TYPICAL RDS(on) = 5 Ω

GW40NC60V

Contextual Info: STGW40NC60V N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE STGW40NC60V • ■ ■ ■ ■ VCES VCE sat (Max)@25°C IC(#) @100°C 600 V < 2.5 V 50 A OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION

W40N20

Abstract: STP40N20
Contextual Info: STP40N20 STW40N20 N-CHANNEL 200V - 0.040Ω - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP40N20 STW40N20 200 V 200 V < 0.045 Ω < 0.045 Ω 40 A 40 A 160 W