MARKING STMICROELECTRONICS SINGLE DIGIT WEEK Search Results

MYS 99

Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Contextual Info: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

sd4931

Contextual Info: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

B2DN TSE2

Abstract: B2DN STTS2002 Analog Marking Information stmicroelectronics "serial eeprom" M34E02 MO-229 STTS424E02 TSE2002a2 tse2
Contextual Info: STTS2002 2.3 V memory module temperature sensor with a 2 Kb SPD EEPROM Data brief Features • STTS2002 is a 2.3 V memory module temperature sensor with 2 Kb SPD EEPROM forward compatible with JEDEC standard TSE 2002a2 and backward compatible with STTS424E02

transistor marking G9

Abstract: J4-81 j4 81 MARKING D8
Contextual Info: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

sd2943

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Arco 423

Abstract: choke vk200 sd2931-10w
Contextual Info: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Contextual Info: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a

Contextual Info: M25P80 8 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 8 Mbit of Flash memory ■ Page Program up to 256 Bytes in 0.64ms (typical) ■ Sector Erase (512 Kbit) in 0.6s (typical) ■ Bulk Erase (8 Mbit) in 6s (typical)

Contextual Info: M25P80 8 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 8 Mbit of Flash memory ■ Page Program up to 256 Bytes in 0.64ms (typical) ■ Sector Erase (512 Kbit) in 0.6s (typical) ■ Bulk Erase (8 Mbit) in 8s (typical)

SO8W Package

Contextual Info: M25P80 8 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz Clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Flash memory ■ Page Program (up to 256 Bytes) in 0.64 ms

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute

Contextual Info: M25P80 8 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz Clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Flash memory ■ Page Program (up to 256 bytes) in 0.64 ms

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data – Window and thresholding functions for both ranging and ALS Description The VL6180X is the latest product based on ST’s patented FlightSenseTM technology. This is a ground-breaking technology allowing absolute

vl6180xv

Contextual Info: VL6180X Proximity and ambient light sensing ALS module Datasheet - production data • Two programmable GPIO – Window and thresholding functions for both ranging and ALS Description Features • Three-in-one smart optical module – Proximity sensor – Ambient Light Sensor

Marking STMicroelectronics Single digit week

Abstract: VDFPN8 package M45PE80 SO16 wide package
Contextual Info: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory