MARKING SMD TRANSISTOR DR Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

TRANSISTOR SMD MARKING CODE A45

Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

smd transistor marking A3

Abstract: smd code marking L01B transistor smd marking code c3 smd code L00B nichicon LOT date code L00B L28a smd code marking NEC rf transistor MARKING CODE L01A smd transistor M5
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd code marking L01B

Abstract: smd code L00B marking code 38 SMD Transistor L02B smd NICHICON DATE CODE MARKING smd code marking NEC capacitor marking code C3 SMD Transistor smd code marking NEC rf transistor l01b l48a
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

nichicon LOT date code

Abstract: smd code L00B l26a L00B smd code marking NEC rf transistor MPS2907A SMD
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

L00A SOT-23

Abstract: L25B smd code marking L01B l01b L00A l01b marking sot23-5 L21A SMD L31A L00B smd code L00B
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

l01b

Abstract: SMD sot23-5 marking E L37B L25B l48a smd code L00B L28B l00a l48b l00b marking
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

2N3904 smd

Abstract: MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K SMD MARKING CODE TRANSISTOR R5
Contextual Info: DAEV6240.004 23 March, 2012 MAS6240 EVALUATION BOARD INTRODUCTION The MAS6240 piezo driver IC evaluation board supports the MAS6240C2 piezo driver IC in the QFN package. This device version has the input current limitation disabled. The MAS6240C1 version, having

smd transistor M5

Abstract: L21A L37B L25B l00b
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

L31B

Abstract: l00b smd diode marking sot23
Contextual Info: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd transistor M5

Abstract: smd m5 transistor 6-pin l48a l13a L21A
Contextual Info: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

Contextual Info: Transistors SMD Type NPN Medium Power Transistor BCP56 -16 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages

Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

SMD transistor code NC

Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
Contextual Info: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance

Contextual Info: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

SMD TRANSISTOR MARKING KI

Abstract: MOSFET marking smd 2SK1828
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1828 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 2.5V Gate Drive 0.4 3 Features 1 High Speed 0.55 Low Threshold Voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter

Contextual Info: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

LM393M

Abstract: LM393 SMD lm393n voltage switch diagram LM393 SMD M08A LM393 application note LM393H smd marking lm393 pin out diagram of LM393N dual comparator LM393N LM2903ITL
Contextual Info: LM393 - Low Power Low Offset Voltage Dual Comparator Features Typical Application *click for larger image Wide supply Voltage range: 2.0V to 36V Single or dual supplies: ±1.0V to ±18V Very low supply current drain 0.4 mA independent of supply voltage Low input biasing current:

SMD Transistor g16

Abstract: marking G16 marking g16 sot23 g16 sot23 smd transistor marking 26 smd transistor 26 2SK1590 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1590 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4

2SK1589

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply.

smd transistor g19

Abstract: 2SK1657
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1