MARKING SMD TRANSISTOR DR Search Results

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

TRANSISTOR SMD MARKING CODE A45

Contextual Info: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

Q67042-S4057

Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
Contextual Info: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

smd transistor marking A3

Abstract: smd code marking L01B transistor smd marking code c3 smd code L00B nichicon LOT date code L00B L28a smd code marking NEC rf transistor MARKING CODE L01A smd transistor M5
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd code marking L01B

Abstract: smd code L00B marking code 38 SMD Transistor L02B smd NICHICON DATE CODE MARKING smd code marking NEC capacitor marking code C3 SMD Transistor smd code marking NEC rf transistor l01b l48a
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of batterypowered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

L37B

Abstract: L00B MARKING CODE L01A l48a l00a smd code marking L01B l0xa L28a l13a TRANSISTOR SMD MARKING CODE 42
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

nichicon LOT date code

Abstract: smd code L00B l26a L00B smd code marking NEC rf transistor MPS2907A SMD
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

L00A SOT-23

Abstract: L25B smd code marking L01B l01b L00A l01b marking sot23-5 L21A SMD L31A L00B smd code L00B
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

l01b

Abstract: SMD sot23-5 marking E L37B L25B l48a smd code L00B L28B l00a l48b l00b marking
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator In SOT-23 and micro SMD Packages General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

2N3904 smd

Abstract: MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K SMD MARKING CODE TRANSISTOR R5
Contextual Info: DAEV6240.004 23 March, 2012 MAS6240 EVALUATION BOARD INTRODUCTION The MAS6240 piezo driver IC evaluation board supports the MAS6240C2 piezo driver IC in the QFN package. This device version has the input current limitation disabled. The MAS6240C1 version, having

smd transistor M5

Abstract: L21A L37B L25B l00b
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

smd transistor M5

Abstract: smd m5 transistor 6-pin l48a l13a L21A
Contextual Info: LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

l01b regulator

Abstract: marking L01B l48a L00B SMD L31A L21A B45196 KEMET L25B smd marking m5 LP2980
Contextual Info: LP2980 Micropower 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. Using an optimized VIP Vertically Integrated PNP process, the LP2980 delivers unequaled performance in all

SG3081

Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS

MARKING CODE SMD IC sot23-5

Abstract: TRANSISTOR SMD MARKING CODE 703 marking SA sot23-5 transistor marking SA sot23-5 SA MARKING CODE SOT23-5 smd transistor marking sot25 MARKING CODE S.A IC sot23-5 transistor smd marking CS 703 TRANSISTOR smd SMD sot25 marking by
Contextual Info: INTEGRATED CIRCUITS SA57001-XX Microminiature, low power consumption, low dropout regulator Product data Supersedes data of 2001 Aug 01 Philips Semiconductors 2003 Mar 20 Philips Semiconductors Product data Microminiature, low power consumption, low dropout regulator

Contextual Info: Transistors SMD Type NPN Medium Power Transistor BCP56 -16 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● High collector current ● Low collector-emitter saturation voltage +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● For AF driver and output stages

Contextual Info: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

SMD transistor code NC

Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
Contextual Info: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance

TRANSISTOR SMD MARKING CODE LF

Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)

Contextual Info: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

smd dual transistor G 9

Abstract: E2 SMD Transistor E3180 P-TO220-7-230 Q67000-A9153 Q67000-A9246 Q67006-A9169 TLE4267GM marking code e2 SMD Transistor TRANSISTOR SMD MARKING CODE 712
Contextual Info: 5-V Low Drop Voltage Regulator TLE 4267 Features • • • • • • • • • • • • • • • Output voltage tolerance ≤ ±2% 400 mA output current capability Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms