MARKING SB DIODE Search Results

marking sb diode

Abstract: ZHCS400
Contextual Info: ZHCS400 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE PINNING Features PIN • Low VF • High current capability • Miniature surface mount package DESCRIPTION 1 Cathode 2 Anode 2 1 Applications: • DC-DC converters • Mobile telecom SB Top View Marking Code: "SB"

marking code SB

Abstract: ZHCS400 marking sb diode
Contextual Info: ZHCS400 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE Features • Low VF • High current capability • Miniature surface mount package PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • DC-DC converters • Mobile telecom SB Top View Marking Code: "SB"

marking sb diode

Abstract: 0615 s2hbb diode B 4A diode schottky 5 A SMB case
Contextual Info: DSB 2 I 60 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 60 SB (S2HBB) 60 V 2A 0.52 V Features / Advantages: Applications: Package: ● Very low Vf

marking sb diode

Abstract: diode schottky 5 A SMB case 0615 S2FB 40V2A
Contextual Info: DSB 2 I 40 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 40 SB (S2FBB) 40 V 2A 0.42 V Features / Advantages: Applications: Package: ● Very low Vf

marking sb diode

Abstract: diode avalanche DSA diode schottky 5 A SMB case
Contextual Info: DSA 2 I 100 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSA 2 I 100 SB (S2KAB) 100 V 2A 0.65 V Features / Advantages: Applications: Package: ● Very low Vf

SB220-G

Abstract: SB245-G SB250-G SB260-G SB280-G SB2100-G
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring .107(2.7) .080(2.0) -High surge current capability

SB320-G

Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability 1.0 25.4 Min.

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. .107(2.7) .080(2.0) -High surge current capability

SB120-G

Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. -High surge current capability

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)

SB550-G

Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)

Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

SB320E-G

Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

SB545E-G

Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G
Contextual Info: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free

SB545

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)

Contextual Info: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the

Contextual Info: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the

BZ-12

Contextual Info: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N www.ti.com SNVS742E – JANUARY 2000 – REVISED APRIL 2013 LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N FEATURES 1 • • • • •

LM385n

Contextual Info: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the

Contextual Info: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the

marking Z2 sot23

Contextual Info: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N www.ti.com SNVS743D – DECEMBER 1999 – REVISED MARCH 2013 LM185-2.5-N/LM285-2.5-N/LM385-2.5-N Micropower Voltage Reference Diode Check for Samples: LM185-2.5-N, LM285-2.5-N, LM385-2.5-N FEATURES Careful design of the LM185-2.5-N has made the

Contextual Info: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N www.ti.com SNVS742E – JANUARY 2000 – REVISED APRIL 2013 LM185-1.2-N/LM285-1.2-N/LM385-1.2-N Micropower Voltage Reference Diode Check for Samples: LM185-1.2-N, LM285-1.2-N, LM385-1.2-N FEATURES 1 • • • • •