MARKING S808 Search Results
MARKING S808 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING S808 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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toy motor Control IC
Abstract: S8082 toy motor 1.5 to 3 v
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s8082ksd-i7f014-003toy motor control ictoy motor 1.5 to 3 v | |
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Contextual Info: 1CH Bi-Directional Motor Drive IC Semiconductor http:// www.auk.co.kr S8082 Description The S8082 is a monolithic integrated circuit designed for driving bi-directional DC motor with braking mode and speed control mode, and it is suitable for the loading motor driver of VCR, |
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s8082ksd-i7f014-003 | |
toy motor Control ICContextual Info: 1CH Bi-Directional Motor Drive IC S8082 Description Semiconductor The S8082 is a monolithic integrated circuit designed for driving http:// www.auk.co.kr bi-directional DC motor with braking mode and speed control mode, and it is suitable for the loading motor driver of VCR, CDP, and TOY systems. The |
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s8082ksd-i7f014-000toy motor control ic | |
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Contextual Info: DG2747/DG2748/DG2749 Vishay Siliconix 0.4-Ω, Low Voltage, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2747, DG2748, and DG2749 are high performance, low on-resistance analog switches of dual SPST configuration. • Wide operation voltage range: 1.6 V to 4.3 V |
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dg2747/dg2748/dg2749dg2747dg2748dg2749+2 | |
DG2747
Abstract: vishay siliconix code marking DG2748 JESD78 marking 2748 DG2747DN
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dg2747/dg2748/dg2749dg2747dg2748dg2749+6 | |
Si3483CDV
Abstract: Si3483CDV-T1-E3
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si3483cdvsi3483cdv-t1-e308-apr-05 | |
SI3483CDV
Abstract: Si3483CDV-T1-E3
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si3483cdvsi3483cdv-t1-e318-jul-08 | |
Si3457CDV
Abstract: Si3457CDV-T1-E3
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si3457cdvsi3457cdv-t1-e308-apr-05 | |
S-80894-Rev
Abstract: Si3457CDV Si3457CDV-T1-E3
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si3457cdvsi3457cdv-t1-e318-jul-08s-80894-rev | |
transistor s808
Abstract: transistor c 5586 S-808 S-80808ANNP-E7Y-T2 S-80809ANNP-E7Z-T2 S-80810ANNP-E70-T2 S-80811ANNP-E71-T2 S-80812ANNP-E72-T2 marking s808 S-80814ANNP-EDB-T2
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75kors-808transistor s808transistor c 5586+7 | |
SUP53P06-20Contextual Info: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT |
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sup53p06-20o-220absup53p06-20-e318-jul-08 | |
SUP53P06-20
Abstract: SUP53P06-20-E3 SUP53P06
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sup53p06-20o-220absup53p06-20-e308-apr-05+1 | |
Si4459ADYContextual Info: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested |
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si4459adysi4459ady-t1-ge3150ed08-apr-05 | |
Si4126DYContextual Info: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4126dysi4126dy-t1-ge318-jul-08 | |
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Contextual Info: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS |
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si4124dysi4124dy-t1-e318-jul-08 | |
si4459a
Abstract: Si4459ADY
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si4459adysi4459ady-t1-ge3150lectual18-jul-08+1 | |
Si4126DYContextual Info: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) |
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si4126dysi4126dy-t1-ge308-apr-05 | |
x1Z11
Abstract: DG4051A
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dg4051a/dg4052a/dg4053adg4051adg4052adg4053a+2 | |
ic 4018
Abstract: S-80926ALMP-DAP-T2 K 3264 transistor
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s-808s-809ic 4018s-80926almp-dap-t2+1 | |
6860-1
Abstract: SI-4124 16a55
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si4124dysi4124dy-t1-e308-apr-056860-1+2 | |
Si7994DP
Abstract: si7994
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si7994dpsi7994dp-t1-ge308-apr-05si7994 | |
Si9926CDY
Abstract: SI9926CDY-T1-E3 8089-2 SI9926CD
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si9926cdysi9926cdy-t1-e308-apr-058089-2+1 | |
DG4051A
Abstract: TSSOP16 spdt switch DG4053 mQFN-16 DG4051
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dg4051a/dg4052a/dg4053adg4051adg4052adg4053a+6 | |
8054ALR
Abstract: replacement transistor 13003 ED9 marking diode S-80830ALY 80836 S8052ANB-NE marking code DIODE ed6 cd 4847 S8054HNM S-8053ALR
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s-80827anup-edqot-89-3s-8052hnms-80824any+14 | |