MARKING PF 51 Search Results

marking pf 51

Abstract: KRA306
Contextual Info: SEMICONDUCTOR KRA306 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA306 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA106S

Contextual Info: SEMICONDUCTOR KRA106S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA106S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRA756E

Contextual Info: SEMICONDUCTOR KRA756E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking PF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PF KRA756E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA756U

Contextual Info: SEMICONDUCTOR KRA756U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking PF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PF KRA756U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA556E

Contextual Info: SEMICONDUCTOR KRA556E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PF KRA556E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA556U

Contextual Info: SEMICONDUCTOR KRA556U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 PF 1 2 Item Marking Description Device Mark PF KRA556U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

Contextual Info: KEMET Part Number: C0402T330J3GACTU C0402T330J3GACTU, C0402T330J3GAC7867 Capacitor, ceramic, 33 pF, +/-5% Tol, 25V, C0G, 0402 General Information Manufacturer: KEMET Marking: UnMkd Electrical Specifications Capacitance: 33 pF Chip Size: 0402 Voltage: Failure Rate:

Contextual Info: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 10-06CC VRRM = 600 V 2x300V IDC = 25 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 10-06CC DGSS 10-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A

PPAP MANUAL for automotive industry

Contextual Info: ESD7371, SZESD7371 Series Ultra-Low Capacitance ESD Protection http://onsemi.com MARKING DIAGRAMS 2 1 Features • • • • • • • • • SOD−323 CASE 477 2 Industry Leading Capacitance Linearity Over Voltage Low Capacitance 0.7 pF Max, I/O to GND

BZX 460

Abstract: marking "2-2 Z" SOT-23 BZX84C DA5 marking bzx 2v7 marking rzr BZX 46.0
Contextual Info: / T 7 SGS-THOMSON SURFACE MOUNT DEVICES H 0»[i&,[l 3TO *S GENERAL PURPOSE & INDUSTRIAL SCHOTTKY DIODES Type Config. Maximum ratings Vrm Characteristics at 25°C Ir @ V r 'F max (V (mA) Vp min W (V) @ (V) C VR •f Dynamic parameters Marking (mA) <PF)

Contextual Info: DM SOSHIN ELECTRIC CO,.LTD May. li:2007 CAPACITOR DATA SHEETS 1. 2. Scope This specification applies to DM mica capacitor. Related Standard JDS C 5102 Test methods of fixed mica capacitors for use in electronic equipment 3. Type designation 1 DM (1) Type

2SK2104

Contextual Info: ROHfTl T entative Specificatio n 1. 2. 3. 4. D ooaaes 577 iRHn Proau cts Type 2b& 2 TYPE. DESCRIPTION. APPLICATION. ABSOLUTE MAXIMUM 2 SK2 1 0 4 Si l i c o n N — Channel M O S Switching. RATINGS T a = 2 51C Item Symbol Drain-Source Voltage v DSS VGSS

311 lamp

Contextual Info: KT 311 90045/46/49/51/52 Vishay BCcomponents Fluorescent Lamp Starter Capacitors KT Radial Type APPLICATIONS The capacitors are suitable for radio interference suppression and incorporation in starters for fluorescent lamp circuits 168x12 halfpage l≥8 w≥3

SOIC-16

Abstract: VDE0884
Contextual Info: Si8450/51/52/55 I S O P R O L O W P O W E R F I V E - C H A N N E L D I G I TA L I S O L A T O R Features  High-speed operation DC  Up to 2500 VRMS isolation to 150 Mbps  60-year life at rated working No start-up initialization required voltage

SI8451BB

Abstract: Si8451 SI8440 Si8450 B23A3 anritsu PATTERN GENERATOR Digital Isolators 4 channel SOIC16 VDE0884
Contextual Info: Si8450/51/52/55 I S O P R O L O W P O W E R F I V E - C H A N N E L D I G I TA L I S O L A T O R Features  High-speed operation: DC to 150 Mbps  Low propagation delay: <10 ns worst case  Wide Operating Supply Voltage: 2.70–5.5 V  Ultra low power typical

fluorescent lamp starter

Contextual Info: KT 311 90045/46/49/51/52 Vishay BCcomponents Fluorescent Lamp Starter Capacitors KT Radial Type APPLICATIONS The capacitors are suitable for radio interference suppression and incorporation in starters for fluorescent lamp circuits 168x12 halfpage l≥8 w≥3

ICS181-51

Contextual Info: DATASHEET ICS181-51 LOW EMI CLOCK GENERATOR Description Features The ICS181-51 generates a low EMI output clock from a clock or crystal input. The device uses IDT’s proprietary mix of analog and digital Phase-Locked Loop PLL technology to spread the frequency

"P-Channel JFET"

Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"
Contextual Info: Datasheet r o w 1fli— • l M l sem iconductor worp. h m a S ^ b a mMm m« A CMPF5460 CMPF5461 CMPF5462 mm SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors

marking code LG

Abstract: transistor marking LG transistor marking code lg CMPFJ310 24 marking code transistor sot-23 Marking LG MARKING 6t sot23 LG marking code
Contextual Info: Datasheet CMPFJ310 Y a n t a i C G illiQ 1 Semiconductor Corp. SURFACE MOUNT SILICON N-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION

DEVICE MARKING CODE table

Abstract: BZX84C43 BZX84C47 BZX84C51 J-STD-020A 301 marking code sot-23 marking code 301 sot-23 marking code
Contextual Info: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · · Min Max A 0.37 0.51 B 1.20 1.40 TOP VIEW

DEVICE MARKING CODE table

Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
Contextual Info: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C43 BZX84C47 BZX84C51 Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · ·