MARKING PARI Search Results

ZP33A

Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Contextual Info: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=

SJS830100

Contextual Info: SJS830100 REV ROMMET MARKING .0 40 HIGH CHARACTERS COLOR: CONTRASTING ECN APP'D 6253 JT 8 /6 /0 8 6297 J T 1 /14/09 6431 J T 1 0 /2 8 /0 9 6716 .075 i OT COLOR: SEE TABLE 1 APCD YYW SJS83010X- ATE CODE I .662 REF *1 db WHITE MARKING \ ml ^— WHITE MARKING

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

106 16k

Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

Contextual Info: THICK FILM MOLDED SIPs, MEDIUM PROFILE 4, 6, 8 AND 10 PIN Medium profile offers increased power handling • Compatible with automatic insertion equipment ■ Superior package integrity ■ Marking on contrasting background for permanent identification ■ Top marking standard

Fuji Electric SM

Abstract: YG811S04
Contextual Info: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol

AZ100E142

Abstract: AZ100E142FN AZ10E142 AZ10E142FN E142 MC100E142 MC10E142
Contextual Info: DATA SHEET AZ10E142 AZ100E142 ARIZONA MICROTEK, INC. 9-bit Shift Register FEATURES • • • • • • • • 700 MHz Min. Shift Frequency PACKAGE AVAILABILITY 9-Bit for Byte-Parity Application PACKAGE PART NO. MARKING Asynchronous Master Reset PLCC 28

NF-F-00-363

Abstract: lexan 2814R nff 16-102 lexan 2814r S336
Contextual Info: SOCLES A LANGUETTES FASTON FASTON LUGS SOCKETS S326 F / S336 F CARACTERISTIQUES GENERALES / GENERAL DATA Visserie: Hardware: Montage: Mounting: Marquage: Marking: Isolant: Socket: Protection des contacts: Contacts protection: Sorties : Terminals : Masse :

Contextual Info: P ip tO S AP9A405 I SEMICONDUCTOR 8192 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 20, 25,35 ns • Fast-fall-through time architecture based on CMOS

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001

Contextual Info: AP9A404A 4096 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 15, 2 0 ,2 5 ,3 5 ns • Fast-fall-through time architecture based on CMOS dual-port SRAM technology

arcotronics 1.27

Contextual Info: ARCOTRONICS SMD - Film Capacitors PEN dielectric - LDE Series • General technical data Plates Winding Termination Marking Climatic category Aluminium layer deposited by evaporation under vacuum. Non inductive type - Stacked technology. Three layers: Aluminium, Brass and Tin alloy.

Aptos Semiconductor

Contextual Info: Revision Date: May 5, 1997 Kotos _AP9A405 • s e m ic o n d u c t o r 8192 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 20, 25, 35 ns

74LS series logic gates 3 input or gate

Abstract: sn74 series TTL logic gates list 4017 counter IC datasheet data sheet ic 4017 IC CD 4033 pin configuration CMOS Data Book Texas Instruments Incorporated 74LS series logic gates hp 4514 TEXAS INSTRUMENTS SN7400 SERIES ic 4026 down counter
Contextual Info: LOGIC OVERVIEW 1 FOCUS ON THE IDEAL LITTLE LOGIC SOLUTION 2 FUNCTIONAL INDEX 3 FUNCTIONAL CROSSĆREFERENCE 4 DEVICE SELECTION GUIDE 5 PACKAGING AND MARKING INFORMATION A LOGIC PURCHASING TOOL/ALTERNATE SOURCES B LOGIC SELECTION GUIDE FIRST HALF 2002 IMPORTANT NOTICE

microstar ms 4011

Abstract: cd4001B spice "Philips Semiconductors" Cross-Reference hp laptop motherboard pcb circuit diagram CD74HC4053 spice CD4066B spice model SN7497 spice model 20 pin laptop lcd connector CD4511B spice TAG 8952
Contextual Info: LOGIC OVERVIEW 1 FOCUS ON NAVIGATING THE TI LOGIC WEB 2 FUNCTIONAL INDEX 3 FUNCTIONAL CROSSĆREFERENCE 4 DEVICE SELECTION GUIDE 5 PACKAGING AND MARKING INFORMATION A LOGIC PURCHASING TOOL/ALTERNATE SOURCES B LOGIC SELECTION GUIDE SECOND HALF 2003 IMPORTANT NOTICE

77V1254

Abstract: 77V1264
Contextual Info: 77V1264L200 Device Errata Notes Supplemental Information The revision of the 77V1264L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 77V1264 L200PG WByywwA XCyywwA Revision

jedec package MO-269

Abstract: MT41J128M SSTE32882 micron ddr3 2133 MT18JDF25672PDZ-1G4
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM VLP RDIMM Features DDR3 SDRAM VLP RDIMM MT18JDF25672PDZ – 2GB MT18JDF51272PDZ – 4GB Features Figure 1: 240-Pin VLP RDIMM (MO-269 R/C L) Module height: 18.75mm (0.738in) Options Marking • Operating temperature

relais STPI 327

Abstract: relais STPI relais STPI 336 relais STPI 316 relays STPI 310 relays STPI 325
Contextual Info: SOCLES A SOUDER POUR FILS ET C.I. SOLDERING SOCKETS FOR WIRES AND PCB S310S S320S S316S S326S S336S CARACTERISTIQUES GENERALES / GENERAL DATA Visserie: Hardware: Montage: Mounting: Marquage: Marking: Isolant: Socket: Contacts: Contacts: en acier inoxydale non magnétique livrée avec le socle

Contextual Info: 83-875-1002 NOTES: 1. 2. 3. 4. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM MECHANICAL: A. DURABILITY: 500 CYCLES MIN. PACKAGING: A. QUANTITY: SINGLE PACK B. MARKING: BAG TO BE MARKED

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

Contextual Info: 83-875-1002 NOTES: 1. 2. 3. 4. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - PTFE ELECTRICAL: A. IMPEDANCE: 50 OHM MECHANICAL: A. DURABILITY: 500 CYCLES MIN. PACKAGING: A. QUANTITY: SINGLE PACK B. MARKING: BAG TO BE MARKED

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

77V106

Abstract: 77V107 YB device marking Code
Contextual Info: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz