MARKING ON SEMICONDUCTOR 720 Search Results

IC 723

Abstract: 723 ic IC 1 723 uA 723 723DC mA 723 BF Marking pdf application of IC 723 Q62702-F1239 Q62702-F1309
Contextual Info: PNP Silicon High-Voltage Transistors ● ● ● ● ● BF 721 BF 723 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 NPN

BF marking code

Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
Contextual Info: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP

ABE 721

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP

ir21015

Abstract: 1N688 1N6882UTK4 1n6885 1N6884UTK4CS BT 342 project 1n6882 MIL PRF 19500 diode thermal profile
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/720A 7 September 2005 SUPERSEDING MIL-PRF-19500/720 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,

B 722 P

Abstract: BB 722 DC DC BB 722
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP

MARKING BF

Contextual Info: SIEM ENS PNP Silicon High-Voltage Transistors BF 721 BF723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN

Contextual Info: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN

MIXA600PF650TSF

Contextual Info: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

Contextual Info: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one

MSI2001

Abstract: MAGNACHIP
Contextual Info: Preliminary – Subject to change without notice USB2.0 High-Speed 480Mbps Analog Switch General Description Features ±8kV Human Body Model (HBM) ESD protection on all pins Low CON : < 6.5pF (typical) Low RON : < 4.0Ω (typical) -3dB bandwidth : >720MHz (typical)

52s marking code transistor

Abstract: 52s marking code 52s marking 2SK3633 SC-65
Contextual Info: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

Contextual Info: MICRON SEM ICONDUCTOR INC b?E D • blllSHT OOG'ìbHS 720 B U R N I^IIC R O N 16K SRAM MODULE X MT8S1632 32 SRAM MODULE 16Kx 32 SRAM FEATURES • High speed: 10*, 15,20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

Contextual Info: TK2P90E MOSFETs Silicon N-Channel MOS π-MOS TK2P90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

Contextual Info: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)

Contextual Info: TK1P90A MOSFETs Silicon N-Channel MOS π-MOS TK1P90A 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)

Contextual Info: TK9A90E MOSFETs Silicon N-Channel MOS π-MOS TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)

Contextual Info: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)

Contextual Info: TK1Q90A MOSFETs Silicon N-Channel MOS π-MOS TK1Q90A 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)

Contextual Info: TK9J90E MOSFETs Silicon N-Channel MOS π-MOS TK9J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)

Contextual Info: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)