MARKING NF5 Search Results
MARKING NF5 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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MARKING NF5 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MGA-85563-BLK
Abstract: MGA-85563 rfics marking 76 A004R MGA-85563-TR1 NF50 marking CODE GA sot363
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mga-85563ot-363sc-705968-6303e+7 | |
5967-5769E
Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
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ina-32063ot-363sc-705965-8921e+6 | |
ina 333 amplifier
Abstract: a006 INA-32063 INA-32063-BLK NF50 AN-A006
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ina-32063ot-363sc-705967-5769e+5 | |
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Contextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB |
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mga-85563ot-363sc-70ot-143+2 | |
marking code ga sot 363
Abstract: rfics marking 5 rfics marking 76 MGA-85563 MGA-85563-BLK MGA-85563-TR1 NF50 marking 34 sot-363 rf sot143 TOP marking mga 017
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mga-85563ot-363sc-705966-4894e+10 | |
Low Noise GaasContextual Info: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB |
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mga-85563ot-363sc-70ot-143+3 | |
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Contextual Info: 3-volt, Low Noise Amplifier for␣ 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB |
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mga-85563ot-363sc-70mga-85563-tr1+3 | |
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Contextual Info: BGB717L7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.4, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. |
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bgb717l7esd | |
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Contextual Info: BGB719N7ESD Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 1.1, 2012-10-30 RF & Protection Devices Edition 2012-10-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. |
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bgb719n7esd | |
BFR840L3RHESD
Abstract: Germanium Transistor LNA ku-band
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bfr840l3rhesdgermanium transistorlna ku-band | |
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Contextual Info: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. |
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bfr840l3rhesd | |
rf transistor frequency 10.0GHz gain 20 dB
Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
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bfr840l3rhesdrf transistor frequency 10.0ghz gain 20 db10.0ghz transistor amplifierku-band lnb+2 | |
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Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Target Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices Edition 2013-06-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. |
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bfr843el3 | |
Germanium Transistor
Abstract: 2.4GHz Power Amplifier transistor
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bfr720l3rhgermanium transistor2.4ghz power amplifier transistor | |
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Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-08-05 RF & Protection Devices Edition 2014-08-05 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. |
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bfr843el3tslp-3-10-potslp-3-10-fptslp-3-10-tp | |
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Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
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bfr720l3rh | |
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Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-06-04 RF & Protection Devices Edition 2014-06-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. |
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bfr843el3tslp-3-10-potslp-3-10-fptslp-3-10-tp | |
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Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
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bfr740l3rh | |
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Contextual Info: BFR843EL3 Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor Data Sheet Revision 1.0, 2014-07-04 RF & Protection Devices Edition 2014-07-04 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. |
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bfr843el3tslp-3-10-potslp-3-10-fptslp-3-10-tp | |
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Contextual Info: BFR740L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-06-21 RF & Protection Devices Edition 2012-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
Original |
bfr740l3rh | |
LNA ku-bandContextual Info: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG |
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bfr840l3rhesdlna ku-band | |
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Contextual Info: BFR720L3RH Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2012-09-03 RF & Protection Devices Edition 2012-09-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer |
Original |
bfr720l3rh | |
BGA628L7Contextual Info: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. |
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bga628l7 | |
BGA628L7
Abstract: XPOSYS 628L C166 JESD22-A114 NF50
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bga628l7xposys628lc166+2 | |