MARKING MJ Search Results

Contextual Info: SDB310WAUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. SDB310WAUF Marking Package Code MJ SOT-323F Outline Dimensions unit : mm 1.95~2.25 0.40 Max.

STK730FC

Abstract: KST-H014-000 STK730 AUK auk stk730
Contextual Info: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

Transistor BFT 92W

Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
Contextual Info: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

30227

Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Contextual Info: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Marking Code FGs

Contextual Info: SIEMENS NPN Silicon Darlington Transistors • • • • BCV 27 BCV47 For general AF applications High collector current High current gain Complementary types: BCV 26, BCV 46 PNP Type Marking Ordering Code (tape and reel) PinCtonfiguration 1 2 3 Package1)

BF 182 transistor

Abstract: transistor 182 marking code M21
Contextual Info: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

Contextual Info: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Q62702-F1314

Contextual Info: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Transistor BFR 38

Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
Contextual Info: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFP 181R

Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Contextual Info: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

IC 2272

Abstract: Q62702-F1502
Contextual Info: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

Contextual Info: Printview: socket; Snap-in version; 3-pole; 100% protected against mismating - Item No.: 770-703 . socket; Snap-in version; 3-pole; 100% protected against mismating Item No.: 770-703 . socket; Snap-in version; 3-pole; 100% protected against mismating . Marking

Marking W1s

Abstract: bft92 w1s sot23
Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Type Marking Ordering Code

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: IXA4IF1200UC preliminary XPT IGBT VCES = 1200 V I C25 = 9A VCE sat = 1.8 V Copack Part number IXA4IF1200UC Marking on Product: X4TAUF 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: TO-252 (DPak) ● Easy paralleling due to the positive temperature

Contextual Info: MIAA10WF600TMH Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT Single Phase Rectifier Three Phase Inverter VRRM = 600 V VCES = 600 V IDAVM25 = IC25 IFSM 90 A = 270 A = 8 A VCE sat = 2. V Part name (Marking on product) MIAA0WF600TMH

Contextual Info: MIAA15WD600TMH Advanced Technical Information Converter - Inverter Module NPT IGBT Single Phase Rectifier Three Phase Inverter VRRM = 600 V VCES = 600 V IDAVM25 = IC25 IFSM 65 A = 550 A = 23 A VCE sat = 2. V Part name (Marking on product) MIAA5WD600TMH

Contextual Info: Printview: End plate; with fixing flange - Item No.: 261-361 . End plate; with fixing flange Item No.: 261-361 . End plate; with fixing flange . Marking . Business data Supplier WAGO Item no. 261-361 EAN 4017332141260 Content 1 Order amount 50 Customer item number

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code