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capacitor esr 100khz

Abstract: polymer capacitor 560uf 6.3V PLV1J220MCL1 PCV1E151MCL7GS
Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS CF Chip Type, Standard series Low ESR, High ripple current. Load life of 2000 hours at 105°C. SMD type : Lead free reflow soldering condition at 260°C peak correspondence. Compliant to the RoHS directive 2002/95/EC .

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED marking ED vishay VARLEY 106M S102 VSD-DB0022 RS-92 6821 vishay resistor option b4
Contextual Info: RS92N/AN Vishay Sfernice Very High Precision and Stability Metal Foil Resistors, Bulk Metal CECC Qualified FEATURES The ultra-high precision planar resistors of the RS92N/AN series are produced according to a special process. The technology used is unique and based on an etched

EN55011-B

Abstract: A122 EN55022-B JAW03-20R JAW05-20R JAW100W JAW12-8R5 JAW24-4R3 2cp1a
Contextual Info: A122_JAW 8/29 TDK Switching Power Supply J SERIES JAW100W TYPE UL/CSA approved, EN60950(CB) and Electric Appliances And Material Control Law compliant, CE marking product, Input harmonics current requirement compliant SPECIFICATIONS AND STANDARDS PART NO.

Contextual Info: Value Added solutions No one can create customer-specific solutions as quickly as Lambda. Modified Standard Power In every application, time to market as well as development budget have the greatest visibil'tv with program management. With over 1,000 standard AC-DC and

RIFA PHE-425

Abstract: phe 425 RIFA PHE PHE425 rifa capacitor PHE
Contextual Info: PHE 425 Precision Capacitor PHE 425 • H igh c a p a c ita n c e d en sity. M U A H A G a p p ro v a l. • H igh stability. C E C C 31201-001 • H igh reliability. Typical applications Construction This capacitor covers 7.5 x 7.5 mm PCB The area, and together with RM 6 ferrite cores,

DIODE 240v 3a

Abstract: 24TYP AC Fuse 250V 30A A122 EN55011-B EN55022-B JAW05-2R0 EDC diode JAW150W JAW24-6R3
Contextual Info: A122_JAW 2/29 TDK Switching Power Supply J SERIES JAW10W TYPE UL/CSA approved, EN60950(CB) and Electric Appliances And Material Control Law compliant, CE marking product SPECIFICATIONS AND STANDARDS PART NO. Rated output voltage and current∗1 Maximum output power

Contextual Info: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " JD Screw Terminal Type, High Energy Density Type series JD High energy density. Suitable for electric power storage. Available for adapted to the RoHS directive 2002/95/EC . High Energy Density JC Specifications

Marking 4001 Vishay

Contextual Info: RCK HR 02, 02A Vishay Sfernice Very High Precision, Very High Stability, High Reliability Resistors, Bulk Metal Foil FEATURES Four variants are available, two reliability levels are proposed: • Level B for serialized components • Level C without serialization

Contextual Info: EClamp2384K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2384K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art device utilizes solid-state

DIN 6120

Abstract: MARKING EU
Contextual Info: SITO Swedish IT-companies´ Organisation ENVIRONMENTAL DEPARTMENT JANUARY 1997 Eco-declaration – Personal Computers IBM PC300GL Increasingly, purchase of personal computers tabletop or portable also involves the environmental aspects of the product. Any comparison between different products is simplified if the product characteristics is defined in an similar way and standardised concepts are used. To meet this, SITO has developed

EnerChip Standards Compliance and Use Procedures

Abstract: PI-72-04 medical IEC62133
Contextual Info: PI-72-04 Product Information Sheet EnerChip Standards Compliance and Use Procedures Section I - Product Information Sheet Scope This Product Information Sheet provides specific compliance and procedural instruction information for global standards, guidelines and directives in the areas of battery safety and environmental concerns. These

Contextual Info: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS

Contextual Info: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

MT46H8M16LFB

Contextual Info: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8 ±0.1V, VDDQ = +1.8 ±0.1V • Bidirectional data strobe per byte of data DQS

MT48V16M32L2

Abstract: MT48LC16M32
Contextual Info: 512Mb : x32 TwinDie Mobile SDRAM Addendum Features Mobile SDRAM MT48LC16M32L2 – 4 Meg x 32 x 4 Banks MT48V16M32L2 – 4 Meg x 32 x 4 Banks MT48H16M32L2 – 4 Meg x 32 x 4 Banks Features Addendum Changes • • • • • • The standard 256Mb SDRAM Mobile x32 data sheets

SLP-251

Contextual Info: EClamp2386K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2386K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art device utilizes solid-state

sensor de movimiento

Abstract: pulsador sensores de movimiento diagrama power P1116 3GP marking codigo componente schroef SICK distance sensor 3G-P1116
Contextual Info: A ENGLISH Contrast Scanner with Teach In Operating Instructions 1 KT 3W-P1116 KT 3W-N1116 Safety Specifications KT 3G-P1116 KT 3G-N1116 8 009 268.1200 HJS KE ‡ Read the operating instructions before starting operation. ‡ Connection, assembly, and settings only by competent

Contextual Info: REVISIONS •MMfaskm er H k Ew^ m m ' oEw iprtor m w t à j M w rigtt li « SVM DATE DCSCRPIKW ECN APPROVED 09/01/07 B D -SU B TECHNICAL DATA TH «1 SH EL L : Steel, 1 0 0 u ” Tin Over 5 0 u " min Nickel. R n ish : Tin Insulator: G lass filled therm oplastic,P BT .U L94V-0 rated

HMN2568D

Contextual Info: HANBit HMN2568D Non-Volatile SRAM MODULE 2Mbit 256K x 8-Bit , 32Pin-DIP, 5V Part No. HMN2568D GENERAL DESCRIPTION The HMN2568D Nonvolatile SRAM is a 2,097,152-bit static RAM organized as 262,144 bytes by 8 bits. The HMN2568D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

32PIN-DIP

Abstract: HMN5128DV
Contextual Info: HANBit HMN5128DV Non-Volatile SRAM MODULE 4Mbit 512K x 8-Bit ,32Pin-DIP, 3.3V Part No. HMN5128DV GENERAL DESCRIPTION The HMN5128DV Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits. The HMN5128DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

HMN328D

Contextual Info: HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit 32K x 8-Bit ,28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

100MHZ

Abstract: 133MHZ 168-PIN P8M644YA9 marking 8a sdram spectek
Contextual Info: SDRAM MODULE P8M644YA9, 16M648YA9 8M, 16M x 64 DIMM Features: • • • • • • • • • • PC100 and PC133 - compatible JEDEC - Standard 168-pin , dual in-line memory module DIMM . TSOP components. Single 3.3v +. 3v power supply. Nonbuffered fully synchronous; all signals measured on

HMN88D

Contextual Info: HANBit HMN88D Non-Volatile SRAM MODULE 64Kbit 8K x 8-Bit ,28Pin DIP, 5V Part No. HMN88D GENERAL DESCRIPTION The HMN88D Nonvolatile SRAM is a 65,536-bit static RAM organized as 8,192 bytes by 8 bits. The HMN88D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

HMN28D

Contextual Info: HANBit HMN28D Non-Volatile SRAM MODULE 16Kbit 2K x 8-Bit , 24pin DIP, 5V Part No. HMN28D GENERAL DESCRIPTION The HMN28D are 16,384-bit, fully static, nonvolatile SRAM’s organized as 2,048 bytes by 8 bits. Each NVSRAM has a self-contained lithium energy source and control circuitry, which constantly monitors Vcc for an out-of-tolerance condition.