MARKING MET ST Search Results
MARKING MET ST Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
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| MG80C186-10/BZA | 
 
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) | 
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| ICM7555MTV/883 | 
 
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ICM7555MTV/883 - Dual marked (5962-8950303GA) | 
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| MQ80C186-10/BYA | 
 
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) | 
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| 54121/BCA | 
 
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) | 
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| 54AC20/SDA-R | 
 
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54AC20/SDA-R - Dual marked (M38510R75003SDA) | 
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MARKING MET ST Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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 Contextual Info: LA431 ADJUSTABLE PRECISION SHUNT REGULATION Features • General Description Precision reference voltage : The LA 431 is a low voltage three terminal LA 431O : 2.495V±0.4% adjustable shunt regulator with a guaranteed LA 431N : 2.495V±1.0% thermal stability over applicable temperature  | 
 Original  | 
LA431 120mA LA431 | |
capacitor esr 100khz
Abstract: polymer capacitor 560uf 6.3V PLV1J220MCL1 PCV1E151MCL7GS 
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2002/95/EC) 120Hz, 100kHz, 100kHz PLX1C151MCL1 PLX1C221MDL1 PLX1C391MDL1 PLX1D121MCL1 PLX1D151MDL1 capacitor esr 100khz polymer capacitor 560uf 6.3V PLV1J220MCL1 PCV1E151MCL7GS | |
RIFA PHE-425
Abstract: phe425 RIFA PHE PHE 425 rifa capacitor PHE capacitor PHE MIL-C-19978 B PHE 225 
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED marking ED vishay VARLEY 106M S102 VSD-DB0022 RS-92 6821 vishay resistor option b4 
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RS92N/AN 08-Apr-05 VISHAY diode MARKING ED VISHAY MARKING ED marking ED vishay VARLEY 106M S102 VSD-DB0022 RS-92 6821 vishay resistor option b4 | |
EN55011-B
Abstract: A122 EN55022-B JAW03-20RC JAW05-20RC JAW12-8R5C tdk ce series CP-52 
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JAW-C100W EN60950 JAW-C150W EN55011-B A122 EN55022-B JAW03-20RC JAW05-20RC JAW12-8R5C tdk ce series CP-52 | |
EN55011-B
Abstract: A122 EN55022-B JAW03-20R JAW05-20R JAW100W JAW12-8R5 JAW24-4R3 2cp1a 
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JAW100W EN60950 EN55011-B A122 EN55022-B JAW03-20R JAW05-20R JAW12-8R5 JAW24-4R3 2cp1a | |
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 Contextual Info: Value Added solutions No one can create customer-specific solutions as quickly as Lambda. Modified Standard Power In every application, time to market as well as development budget have the greatest visibil'tv with program management. With over 1,000 standard AC-DC and  | 
 OCR Scan  | 
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RIFA PHE-425
Abstract: phe 425 RIFA PHE PHE425 rifa capacitor PHE 
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 OCR Scan  | 
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02A04
Abstract: MIL-R-55182 
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2A-04 2A-08 17-Jan-05 02A04 MIL-R-55182 | |
DIODE 240v 3a
Abstract: 24TYP AC Fuse 250V 30A A122 EN55011-B EN55022-B JAW05-2R0 EDC diode JAW150W JAW24-6R3 
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JAW10W EN60950 DIODE 240v 3a 24TYP AC Fuse 250V 30A A122 EN55011-B EN55022-B JAW05-2R0 EDC diode JAW150W JAW24-6R3 | |
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 Contextual Info: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " JD Screw Terminal Type, High Energy Density Type series JD High energy density. Suitable for electric power storage. Available for adapted to the RoHS directive 2002/95/EC . High Energy Density JC Specifications  | 
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2002/95/EC) 4000F 30minuite 8100X | |
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 Contextual Info: ELECTRIC DOUBLE LAYER CAPACITORS "EVerCAP " JD Screw Terminal Type, High Energy Density Type series High energy density. Suitable for electric power storage. Compliant to the RoHS directive 2002/95/EC . Specifications Item Performance Characteristics Category Temperature Range  | 
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2002/95/EC) 6000F 30minuite | |
Marking 4001 VishayContextual Info: RCK HR 02, 02A Vishay Sfernice Very High Precision, Very High Stability, High Reliability Resistors, Bulk Metal Foil FEATURES Four variants are available, two reliability levels are proposed: • Level B for serialized components • Level C without serialization  | 
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08-Apr-05 Marking 4001 Vishay | |
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 Contextual Info: General Purpose Precision Surface Mount Resistors GPCF Series • Precision metal film technology · Ohmic range 10R – 100K · Precision to ±0.1% and 25ppm/°C · Load life stability and humidity to 0.5% Electrical Data Power rating @70°C Limiting element voltage  | 
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25ppm/Â GPCF0603-1K54BT5 50ppm/Â | |
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 Contextual Info: EClamp2384K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2384K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art device utilizes solid-state  | 
 Original  | 
EClampTM2384K | |
DIN 6120
Abstract: MARKING EU 
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PC300GL 97-01-13/v5) DIN 6120 MARKING EU | |
EnerChip Standards Compliance and Use Procedures
Abstract: PI-72-04 medical IEC62133 
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PI-72-04 PI-72-04 EnerChip Standards Compliance and Use Procedures medical IEC62133 | |
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 Contextual Info: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS  | 
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128Mb: MT46H8M16LF 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF | |
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 Contextual Info: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile Double Data Rate DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)  | 
 Original  | 
128Mb: MT46H8M16LF 09005aef8051ce4d/Source: 09005aef81a19319 MT46H8M16LF | |
MT46H8M16LFBContextual Info: Advance‡ 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8 ±0.1V, VDDQ = +1.8 ±0.1V • Bidirectional data strobe per byte of data DQS  | 
 Original  | 
128Mb: MT46H8M16LF 09005aef822b7e27/Source: 09005aef822b7dd6 MT46H8M16LFB | |
hanbit non-volatile ram
Abstract: HMN1288J MN128 
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HMN1288J 34Pin-JLCC, HMN1288J 576-bit hanbit non-volatile ram MN128 | |
HMN5128JVContextual Info: HANBit HMN5128JV Non-Volatile SRAM MODULE 4Mbit 512K x 8-Bit ,34Pin-JLCC, 3.3V Part No. HMN5128JV GENERAL DESCRIPTION The HMN5128JV Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits. The HMN5128JV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write  | 
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HMN5128JV 34Pin-JLCC, HMN5128JV 304-bit | |
MT48V16M32L2
Abstract: MT48LC16M32 
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 Original  | 
512Mb MT48LC16M32L2 MT48V16M32L2 MT48H16M32L2 09005aef817f1b8c/Source: 09005aef818112f1 512Mb MT48V16M32L2 MT48LC16M32 | |
SLP-251Contextual Info: EClamp2386K ESD/EMI Protection for Color LCD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2386K is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art device utilizes solid-state  | 
 Original  | 
EClampTM2386K SLP-251 | |