MARKING M6J Search Results
MARKING M6J Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 5962-8950303GC |
|
ICM7555M - Dual Marked (ICM7555MTV/883) |
|
||
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| 54ACT244/B2A |
|
54ACT244/B2A - Dual marked (5962-8776001B2A) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
||
| MQ80186-8/BYC |
|
80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
|
MARKING M6J Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: BL GALAXY ELECTRICAL M1J-M7J VOLTAGE RANGE: 50 - 1000V SURFACE MOUNT RECTIFIERS CURRENT: FEATURES 1.0 A SMAJ For surface mounted applications Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropnol and similar solvents |
Original |
STD-202 203MAX 50mVp-p 013mm) 280031A | |
marking m6jContextual Info: SURGE COMPONENTS, INC. M1J-M7J VOLTAGE RANGE: 50 - 1000V SURFACE MOUNT RECTIFIERS CURRENT: FEATURES 1.0 A SMAJ For surface mounted applications Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropnol and similar solvents |
Original |
STD-202 203MAX other100 50mVp-p 013mm) marking m6j | |
M6J45
Abstract: SM6G45
|
Original |
SM6G45 SM6J45 SM6G45A SM6J45A M6J45 | |
M6J45
Abstract: m6g45 SM6J45 t m6g45 SM6G45 SM6G45A SM6J45A BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR
|
Original |
SM6G45 SM6J45 SM6G45A SM6J45A SM6G45 SM6G45A M6J45 m6g45 t m6g45 SM6J45A BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR | |
M6JZ47
Abstract: m6gz47 SM6JZ47A SM6GZ47A SM6GZ47 TOSHIBA THYRISTOR
|
Original |
SM6GZ47 SM6JZ47 SM6GZ47A SM6JZ47A SM6GZ47 SM6GZ47A M6JZ47 m6gz47 SM6JZ47A TOSHIBA THYRISTOR | |
M6JZ47
Abstract: m6gz47 SM6JZ47 M6JZ TOSHIBA TRIODE SM6GZ47 SM6GZ47A SM6JZ47A
|
Original |
SM6GZ47 SM6JZ47 SM6GZ47A SM6JZ47A SM6GZ47 SM6GZ47A M6JZ47 m6gz47 M6JZ TOSHIBA TRIODE SM6JZ47A | |
SM6G48
Abstract: SM6G48A SM6J48 SM6J48A USM6G48 USM6G48A USM6J48 USM6J48A
|
OCR Scan |
SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A SM6G48 SM6G48A SM6J48 SM6J48A USM6G48 USM6G48A USM6J48A | |
M6J45
Abstract: m6g45 SM6G45 SM6G45A SM6J45 SM6J45A TOSHIBA THYRISTOR
|
Original |
SM6G45, SM6J45, SM6G45A, SM6J45A SM6G45 SM6G45A M6J45 m6g45 SM6G45 SM6G45A SM6J45 SM6J45A TOSHIBA THYRISTOR | |
|
Contextual Info: TO SH IBA SM6 G,J 48, USM6(G,J)48,SM6(G,J)48A, USM6(GfJ)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : V d r m = 400, 600V |
OCR Scan |
SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A --30mA | |
|
Contextual Info: TO SH IB A SM6 G,J 48, USM6(G,J)48,SM6(G,J)48A, USM6(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A AC POWER CONTROL APPLICATIONS : V j)R M ~ 400, 600V • Repetitive Peak Off-State Voltage |
OCR Scan |
SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A | |
|
Contextual Info: SM6G45, SM6J45, SM6G45A, SM6J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 6A |
Original |
SM6G45, SM6J45, SM6G45A, SM6J45A SM6G45 SM6G45A | |
m6gz47
Abstract: M6JZ47 SM6JZ47 SM6JZ47A SM6GZ47 SM6GZ47A PART MARKING 9A M6JZ
|
Original |
SM6GZ47, SM6JZ47, SM6GZ47A, SM6JZ47A SM6GZ47 SM6GZ47A m6gz47 M6JZ47 SM6JZ47 SM6JZ47A SM6GZ47 SM6GZ47A PART MARKING 9A M6JZ | |
m6g45Contextual Info: TO SH IBA SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current : It RMS —6A |
OCR Scan |
SM6G45 SM6J45 SM6G45A SM6J45A SM6G45, SM6J45, SM6G45A, m6g45 | |
SM6G48
Abstract: SM6G48A SM6J48 SM6J48A USM6G48 USM6G48A USM6J48 USM6J48A
|
Original |
SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A SM6G48 SM6G48A SM6J48 SM6J48A USM6G48 USM6G48A USM6J48 USM6J48A | |
|
|
|||
|
Contextual Info: TO SH IBA SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vd r m = 400, 600V R.M.S On-State Current : It RMS —6A |
OCR Scan |
SM6G45 SM6J45 SM6G45A SM6J45A SM6G45, SM6J45, SM6G45A, | |
|
Contextual Info: TOSHIBA SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6GZ47, SM6JZ47, SM6GZ47A, SM6JZ47A U nit in mm AC POWER CONTROL APPLICATIONS 10.3 MAX. = 400, 600V • Repetitive Peak Off-State Voltage V D RM • R.M.S On-State Current |
OCR Scan |
SM6GZ47 SM6JZ47 SM6GZ47A SM6JZ47A SM6GZ47, SM6JZ47, SM6GZ47A, | |
SM6G48
Abstract: SM6G48A SM6J48 SM6J48A USM6G48 USM6G48A USM6J48 USM6J48A TOSHIBA THYRISTOR
|
Original |
SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A SM6G48 SM6G48A SM6J48 SM6J48A USM6G48 USM6G48A USM6J48 USM6J48A TOSHIBA THYRISTOR | |
MA6J784Contextual Info: Schottky Barrier Diodes SBD MA6J784 Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 5 4 1 2 3 0.7±0.1 • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) |
Original |
MA6J784 SC-88 MA6J784 | |
|
Contextual Info: T O SH IB A SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A Unit in mm AC POWER CONTROL APPLICATIONS • • Repetitive Peak Off-State Voltage : V;q r m = 400, 600V R.M.S On-State Current |
OCR Scan |
SM6G45 SM6J45 SM6G45A SM6J45A SM6G45, SM6J45, SM6G45A, | |
G2360Contextual Info: T O SH IB A SM6GZ47,SM6JZ47,SM6GZ47A,SM6JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6GZ47, SM6JZ47, SM6GZ47A, SM6JZ47A AC POWER CONTROL APPLICATIONS U nit in mm 10.3M A X. • Repetitive Peak Off-State Voltage V D R M = 400, 600V • |
OCR Scan |
SM6GZ47 SM6JZ47 SM6GZ47A SM6JZ47A SM6GZ47, SM6JZ47, SM6GZ47A, G2360 | |
M6GZ47
Abstract: M6JZ47
|
Original |
SM6GZ47, SM6JZ47, SM6GZ47A, SM6JZ47A SM6GZ47 SM6GZ47A M6GZ47 M6JZ47 | |
|
Contextual Info: T O SH IB A SM6 G,J 48, USM6(G,J)48,SM6(G,J)48A, USM6(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage : Vq r m ;= 400, 600V |
OCR Scan |
SM6G48, USM6G48, SM6J48, USM6J48 SM6G48A, USM6G48A, SM6J48A, USM6J48A | |
|
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6J784 Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 5 4 1 2 3 0.7±0.1 • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short |
Original |
2002/95/EC) MA6J784 30nteed | |
|
Contextual Info: T O SH IB A SM6G45,SM6J45,SM6G45A,SM6J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45, SM6J45, SM6G45A, SM6J45A Unit in mm AC PO W ER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : Vj R]y[ = 400, 600V R.M.S On-State Current |
OCR Scan |
SM6G45 SM6J45 SM6G45A SM6J45A SM6G45, SM6J45, SM6G45A, SM6G45 SM6G45A | |